Patents by Inventor Peter G. Schunemann
Peter G. Schunemann has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10234745Abstract: A solid state optical beam steering device and method of operation includes converting a frequency or wavelength of a signal in a non-linear converter associated with one channel just before launch. A second channel has a similar constructions and operation. A processor compares the phase difference between the two channels and uses the difference to horizontally steer a beam without moving mechanical parts. This establishes the solid-state nature of the present disclosure. The non-linear converter may be a quasi-phase matched non-linear converter with alternating crystal domains.Type: GrantFiled: July 5, 2017Date of Patent: March 19, 2019Assignee: BAE Systems Information and Electronic Systems Integration Inc.Inventors: Paul R. Moffitt, Peter A. Ketteridge, Peter G. Schunemann
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Publication number: 20190011803Abstract: A solid state optical beam steering device and method of operation includes converting a frequency or wavelength of a signal in a non-linear converter associated with one channel just before launch. A second channel has a similar constructions and operation. A processor compares the phase difference between the two channels and uses the difference to horizontally steer a beam without moving mechanical parts. This establishes the solid-state nature of the present disclosure. The non-linear converter may be a quasi-phase matched non-linear converter with alternating crystal domains.Type: ApplicationFiled: July 5, 2017Publication date: January 10, 2019Inventors: Paul R. Moffitt, Peter A. Ketteridge, Peter G. Schunemann
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Patent number: 10156023Abstract: A system and method for producing bulk GaAs with an increased carrier lifetime of at least 10 microseconds is provided. The system and method of producing the GaAs crystal involves using a technique called low pressure hydride vapor phase epitaxy (LP-HVPE). In this technique, a gas containing Ga (typically GaCl) is reacted with a gas containing As (typically AsH3) at the surface of a GaAs substrate. When grown under the proper conditions, the epitaxial, vapor grown GaAs crystal has ultra-long free carrier lifetimes of at least one order of magnitude greater than that of the previous lifetime of 1 microsecond. This very long free carrier lifetime GaAs will be particularly useful as a semiconductor radiation detector material and is also expected to be useful for many other applications than include medical imaging, solar cells, diode lasers, and optical limiters and other applications.Type: GrantFiled: March 30, 2017Date of Patent: December 18, 2018Assignee: BAE Systems Information and Electronic Systems Integration Inc.Inventors: Peter G. Schunemann, Kevin T. Zawilski
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Publication number: 20170204533Abstract: A system and method for producing bulk GaAs with an increased carrier lifetime of at least 10 microseconds is provided. The system and method of producing the GaAs crystal involves using a technique called low pressure hydride vapor phase epitaxy (LP-HVPE). In this technique, a gas containing Ga (typically GaCl) is reacted with a gas containing As (typically AsH3) at the surface of a GaAs substrate. When grown under the proper conditions, the epitaxial, vapor grown GaAs crystal has ultra-long free carrier lifetimes of at least one order of magnitude greater than that of the previous lifetime of 1 microsecond. This very long free carrier lifetime GaAs will be particularly useful as a semiconductor radiation detector material and is also expected to be useful for many other applications than include medical imaging, solar cells, diode lasers, and optical limiters and other applications.Type: ApplicationFiled: March 30, 2017Publication date: July 20, 2017Inventors: Peter G. Schunemann, Kevin T. Zawilski
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Patent number: 9704706Abstract: A novel bulk GaAs with an increased carrier lifetime of at least 10 microseconds has been produced. This novel GaAs has many uses to improve optical and electrical devices. The method of producing the GaAs crystal involves using a technique called low pressure hydride vapor phase epitaxy (LP-HVPE). In this technique, a gas containing Ga (typically GaCl) is reacted with a gas containing As (typically AsH3) at the surface of a GaAs substrate. When grown under the proper conditions, the epitaxial, vapor grown GaAs crystal has ultra-long free carrier lifetimes of at least one order of magnitude greater than that of the previous art of 1 microsecond. This very long free carrier lifetime GaAs will be particularly useful as a semiconductor radiation detector material and is also expected to be useful for many other applications than include medical imaging, solar cells, diode lasers, and optical limiters and other applications.Type: GrantFiled: June 11, 2014Date of Patent: July 11, 2017Assignee: BAE Systems Information and Electronic Systems Integration Inc.Inventors: Peter G. Schunemann, Kevin T. Zawilski
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Publication number: 20150235848Abstract: A novel bulk GaAs with an increased carrier lifetime of at least 10 microseconds has been produced. This novel GaAs has many uses to improve optical and electrical devices. The method of producing the GaAs crystal involves using a technique called low pressure hydride phase epitaxy (LP-HVPE). In this technique, a gas containing Ga (typically GaCl) is reacted with a gas containing As (typically AsH3) at the surface of a GaAs substrate. When grown under the proper conditions, the epitaxial, vapor grown GaAs crystal has ultra-long free carrier lifetimes of at least one order of magnitude greater than that of the previous art of 1 microsecond. This very long free carrier lifetime GaAs will be particularly useful as a semiconductor radiation detector material and is also expected to be useful for many other applications than include medical imaging, solar cells, diode lasers, and optical limiters and other applications.Type: ApplicationFiled: June 11, 2014Publication date: August 20, 2015Inventors: Peter G. Schunemann, Kevin T. Zawilski
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Patent number: 9069229Abstract: CdSiP2 crystals with sizes and optical quality suitable for use as nonlinear optical devices are disclosed, as well as NLO devices based thereupon. A method of growing the crystals by directional solidification from a stoichiometric melt is also disclosed. The disclosed NLO crystals have a higher nonlinear coefficient than prior art crystals that can be pumped by solid state lasers, and are particularly useful for frequency shifting 1.06 ?m, 1.55 ?m, and 2 ?m lasers to wavelengths between 2 ?m and 10 ?m. Due to the high thermal conductivity and low losses of the claimed CdSiP2 crystals, average output power can exceed 10 W without severe thermal lensing. A 6.45 ?m laser source for use as a medical laser scalpel is also disclosed, in which a CdSiP2 crystal is configured for non-critical phase matching, pumped by a 1064 nm Nd:YAG laser, and temperature-tuned to produce output at 6.45 ?m.Type: GrantFiled: January 15, 2013Date of Patent: June 30, 2015Assignee: BAE Systems Information and Electronic Systems Integration Inc.Inventors: Peter G. Schunemann, Kevin T. Zawilski
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Patent number: 8493649Abstract: CdSiP2 crystals with sizes and optical quality suitable for use as nonlinear optical devices are disclosed, as well as NLO devices based thereupon. A method of growing the crystals by directional solidification from a stoichiometric melt is also disclosed. The disclosed NLO crystals have a higher nonlinear coefficient than prior art crystals that can be pumped by solid state lasers, and are particularly useful for frequency shifting 1.06 ?m, 1.55 ?m, and 2 ?m lasers to wavelengths between 2 ?m and 10 ?m. Due to the high thermal conductivity and low losses of the claimed CdSiP2 crystals, average output power can exceed 10 W without severe thermal lensing. A 6.45 ?m laser source for use as a medical laser scalpel is also disclosed, in which a CdSiP2 crystal is configured for non-critical phase matching, pumped by a 1064 nm Nd:YAG laser, and temperature-tuned to produce output at 6.45 ?m.Type: GrantFiled: February 7, 2013Date of Patent: July 23, 2013Assignee: BAE Systems Information and Electronic Systems Integration Inc.Inventors: Peter G. Schunemann, Kevin T. Zawilski
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Patent number: 8379296Abstract: CdSiP2 crystals with sizes and optical quality suitable for use as nonlinear optical devices are disclosed, as well as NLO devices based thereupon. A method of growing the crystals by directional solidification from a stoichiometric melt is also disclosed. The disclosed NLO crystals have a higher nonlinear coefficient than prior art crystals that can be pumped by solid state lasers, and are particularly useful for frequency shifting 1.06 ?m, 1.55 ?m, and 2 ?m lasers to wavelengths between 2 ?m and 10 ?m. Due to the high thermal conductivity and low losses of the claimed CdSiP2 crystals, average output power can exceed 10 W without severe thermal lensing. A 6.45 ?m laser source for use as a medical laser scalpel is also disclosed, in which a CdSiP2 crystal is configured for non-critical phase matching, pumped by a 1064 nm Nd:YAG laser, and temperature-tuned to produce output at 6.45 ?m.Type: GrantFiled: October 23, 2009Date of Patent: February 19, 2013Assignee: BAE Systems Information and Electronic Systems Integration Inc.Inventors: Peter G Schunemann, Kevin T Zawilski
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Publication number: 20110054451Abstract: CdSiP2 crystals with sizes and optical quality suitable for use as nonlinear optical devices are disclosed, as well as NLO devices based thereupon. A method of growing the crystals by directional solidification from a stoichiometric melt is also disclosed. The disclosed NLO crystals have a higher nonlinear coefficient than prior art crystals that can be pumped by solid state lasers, and are particularly useful for frequency shifting 1.06 ?m, 1.55 ?m, and 2 ?m lasers to wavelengths between 2 ?m and 10 ?m. Due to the high thermal conductivity and low losses of the claimed CdSiP2 crystals, average output power can exceed 10 W without severe thermal lensing. A 6.45 ?m laser source for use as a medical laser scalpel is also disclosed, in which a CdSiP2 crystal is configured for non-critical phase matching, pumped by a 1064 nm Nd:YAG laser, and temperature-tuned to produce output at 6.45 ?m.Type: ApplicationFiled: October 23, 2009Publication date: March 3, 2011Applicant: BAE Systems Information and Electronic Systems Integration, Inc.Inventors: Peter G Schunemann, Kevin T Zawilski
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Patent number: 6714578Abstract: The present invention uses a novel crystal host to minimize parasitic upconversion and lifetime quenching processes by increasing the distance between active dopant ions in the matrix. As a result, erbium that could previously only be useful at low levels may now be incorporated at much higher concentrations without adverse effects. In addition, this host has long excited-state-lifetimes, making it more effective as an energy storage device for pulsed laser applications.Type: GrantFiled: June 6, 2002Date of Patent: March 30, 2004Inventors: Scott D. Setzler, Peter G. Schunemann, Thomas M. Pollak
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Publication number: 20020186734Abstract: The present invention uses a novel crystal host to minimize parasitic upconversion and lifetime quenching processes by increasing the distance between active dopant ions in the matrix. As a result, erbium that could previously only be useful at low levels may now be incorporated at much higher concentrations without adverse effects. In addition, this host has long excited-state-lifetimes, making it more effective as an energy storage device for pulsed laser applications.Type: ApplicationFiled: June 6, 2002Publication date: December 12, 2002Inventors: Scott D. Setzler, Peter G. Schunemann, Thomas M. Pollak
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Patent number: 6047013Abstract: The invention comprises a RE-doped MA.sub.2 X.sub.4 crystalline gain medium, where M includes a divalent ion such as Mg, Ca, Sr, Ba, Pb, Eu, or Yb; A is selected from trivalent ions including Al, Ga, and In; X is one of the chalcogenide ions S, Se, and Te; and RE represents the trivalent rare earth ions. The MA.sub.2 X.sub.4 gain medium can be employed in a laser oscillator or a laser amplifier. Possible pump sources include diode lasers, as well as other laser pump sources. The laser wavelengths generated are greater than 3 microns, as becomes possible because of the low phonon frequency of this host medium. The invention may be used to seed optical devices such as optical parametric oscillators and other lasers.Type: GrantFiled: January 22, 1999Date of Patent: April 4, 2000Assignee: The Regents of the University of CaliforniaInventors: Stephen A. Payne, Ralph H. Page, Kathleen I. Schaffers, Michael C. Nostrand, William F. Krupke, Peter G. Schunemann
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Patent number: 5611856Abstract: The present invention provides a method for producing single crystals of a group II-IV-V.sub.2 and group I-III-VI.sub.2 compounds by synthesizing compound material from its constituents and separately melting and refreezing the material in a transparent furnace while observing crystal growth.Type: GrantFiled: May 19, 1994Date of Patent: March 18, 1997Assignee: Lockheed Sanders, Inc.Inventors: Peter G. Schunemann, Thomas M. Pollak