Abstract: One or more embodiments provide circuitry for isolation and communication of signals between circuits operating in different voltage domains using capacitive coupling. The embodiments utilize capacitive structures having increased breakdown voltage in comparison to previous parallel plate implementations. The capacitive isolation is provided by parallel plate capacitive structures, each implemented to have parallel plates of different horizontal sizes. Due to the difference in horizontal size, edges of the parallel plates, where electric fields are the strongest, are laterally offset from the region where the parallel plates overlap. As a result, breakdown voltage between the parallel plates is increased.

Abstract: A high voltage electrical switch including: a plurality of series connected semiconductor switches; a plurality of rectifiers wherein each rectifier is connected to a semiconductor switch control input of one of the semiconductor switches; a radio frequency signal generator; and a plurality of galvanic isolators, wherein each galvanic isolator connects the radio frequency signal generator to one of the plurality of rectifiers, wherein the plurality of semiconductor switches are isolated from one another.

Abstract: A MEMS resonator has a component which provides a capacitance associated with the transduction gap which has a temperature-dependent dielectric characteristic, which varies in the same direction (i.e. the slope has the same sign) as the Young's modulus of the material of the resonator versus temperature. This means that the resonant frequency is less dependent on temperature.

Abstract: A high voltage electrical switch including: a plurality of series connected semiconductor switches; a plurality of rectifiers wherein each rectifier is connected to a semiconductor switch control input of one of the semiconductor switches; a radio frequency signal generator; and a plurality of galvanic isolators, wherein each galvanic isolator connects the radio frequency signal generator to one of the plurality of rectifiers, wherein the plurality of semiconductor switches are isolated from one another.

Abstract: An isolated semiconductor circuit comprising: a first sub-circuit and a second sub-circuit; a backend that includes an electrically isolating connector between the first and second sub-circuits; a lateral isolating trench between the semiconductor portions of the first and second sub-circuits, wherein the lateral isolating trench extends along the width of the semiconductor portions of the first and second sub-circuits, wherein one end of the isolating trench is adjacent the backend, and wherein the isolating trench is filled with an electrically isolating material.

Abstract: An integrated circuit includes a support, at least three metal layers above the support, the metal layers having a top metal layer with a top plate and a bottom metal layer with a bottom plate, dielectric material between the top and bottom plates to form a capacitor, and plural oxide layers above the support, such oxide layers including a top oxide layer, each oxide layer respectively covering a corresponding metal layer. The top oxide layer covers the top metal layer and has an opening exposing at least part of the top plate. A method of forming the integrated circuit by providing a support with metal and oxide layers, including a bottom plate, forming a cavity exposing the bottom plate, filling the cavity with dielectric, applying a further metal layer having a top plate and a further oxide layer, and forming an opening to expose the top plate.

Abstract: A MEMS switch in which at least first, second and third signal lines are provided over the substrate, which each terminate at a connection region. A lower actuation electrode arrangement is over the substrate. A movable contact electrode is suspended over the connection regions for making or breaking electrical contact between at least two of the three connection regions and an upper actuation electrode provided over the lower actuation electrode. The use of three of more signal lines enables a symmetrical actuation force to be achieved or enables multiple switch functions to be implemented by the single movable electrode, or both.

Abstract: An oscillator device comprises a resonator mass which is connected by a spring arrangement to a substrate and a feedback element for controlling oscillation of the resonator mass, which comprises a piezoresistive element connected between the resonator mass and the substrate. The invention provides an oscillator device in which the two parts (resonator and circuit to close the oscillation loop) are combined inside one single oscillator device, which can be a MEMS device.

Abstract: As may be consistent with one or more embodiments discussed herein, an integrated circuit apparatus includes a membrane suspended over a cavity, with the membrane and cavity defining a chamber. The membrane has a plurality of openings therein that pass gas into and out of the chamber. As the membrane is actuated, the volume of the chamber changes to generate a gas pressure inside the chamber that is different than a pressure outside the chamber. A sensor detects a frequency-based characteristic of the membrane responsive to the change in volume, and therein provides an indication of the gas pressure outside the chamber.

Abstract: In one or more embodiments, circuitry is provided for isolation and communication of signals between circuits operating in different voltage domains using capacitive coupling. The capacitive coupling is provided by one or more capacitive structures having a breakdown voltage that is defined by way of the various components and their spacing. The capacitive structures each include three capacitive plates arranged to have two plates located in an upper layer and one plate located in a lower layer. A communication signal can be transmitted via the capacitive coupling created between the lower plate and each of the upper plates, respectively.

Abstract: One or more embodiments provide circuitry for isolation and communication of signals between circuits operating in different voltage domains using capacitive coupling. The embodiments utilize capacitive structures having increased breakdown voltage in comparison to previous parallel plate implementations. The capacitive isolation is provided by parallel plate capacitive structures, each implemented to have parallel plates of different horizontal sizes. Due to the difference in horizontal size, edges of the parallel plates, where electric fields are the strongest, are laterally offset from the region where the parallel plates overlap. As a result, breakdown voltage between the parallel plates is increased.

Abstract: A MEMS device comprises first and second opposing electrode arrangements (22,28), wherein the second electrode arrangement (28) is electrically movable to vary the electrode spacing between facing sides of the first and second electrode arrangements. At least one of the facing sides has a non-flat surface with at least one peak and at least one trough. The height of the peak and depth of the trough is between 0.01t and 0.1t where t is the thickness of the movable electrode.

Abstract: A MEMS switch (1, 81), and methods of fabricating thereof, the switch comprising: a sealed cavity (24); and a membrane (26); wherein the sealed cavity (24) is defined in part by the membrane (26); and the membrane is a 5 metallic membrane (26), for example consisting of a single type of metal or metal alloy. The MEMS switch (1, 81) may comprise a top electrode (30), for example extending into the cavity (24), located in a hole (32) in the metallic membrane (26). Fabrication may include providing a sacrificial layer (22) in a partly defined cavity (24). The bending stiffness of the membrane (26) may be 10 higher along an RF line (102) than along a line (104) perpendicular to the RF line (102), for example by virtue of the cavity (24) being elliptical.

Abstract: A method of operating a micro-electromechanical system, comprising a resonator; an actuation electrode; and a first detection electrode, to filter and mix a plurality of signals. The method comprises applying a first alternating voltage signal to the actuation electrode, wherein an actuation force is generated having a frequency bandwidth that is greater than and includes a resonant bandwidth of a mechanical frequency response of the resonator, and wherein a displacement of the resonator is produced which is filtered by the mechanical frequency response and varies a value of an electrical characteristic of the first detection electrode. The method also comprises applying a second alternating voltage signal to the first detection electrode, wherein the second voltage signal is mixed with the varying value to produce a first alternating current signal. The first alternating current signal is detected at the first detection electrode.

Abstract: A MEMS switch comprises a substrate, first and second signal lines over the substrate, which each terminate at a connection region, a lower actuation electrode over the substrate and movable contact electrode suspended over the connection regions of the first and second signal lines. An upper actuation electrode is provided over the lower actuation electrode. The connection regions of the first and second signal lines are at a first height from the substrate, wherein signal line portions extending from the connection regions are at a lower height from the substrate, and the lower actuation electrode is provided over the lower height signal line portions, so that the lower height signal line portions are buried. The area available for the actuation electrodes becomes larger and undesired forces and interference are reduced.

Abstract: A MEMS pressure sensor wherein at least one of the electrode arrangements comprises an inner electrode and an outer electrode arranged around the inner electrode. The capacitances associated with the inner electrode and the outer electrode are independently measured and can be differentially measured. This arrangement enables various different read out schemes to be implemented and also enables improved compensation for variations between devices or changes in device characteristics over time.

Abstract: A MEMS switch in which at least first, second and third signal lines are provided over the substrate, which each terminate at a connection region. A lower actuation electrode arrangement is over the substrate. A movable contact electrode is suspended over the connection regions for making or breaking electrical contact between at least two of the three connection regions and an upper actuation electrode provided over the lower actuation electrode. The use of three of more signal lines enables a symmetrical actuation force to be achieved, and/or enables multiple switch functions to be implemented by the single movable electrode.

Abstract: A switching circuit employs switches operating at low on resistance and high off capacitance. In connection with various example embodiments, a switching circuit selectively couples a communication port to one of two or more internal circuits based upon a type of input at the communication port. A sensor circuit senses the type of the input and, based upon the sensed input type, actuates one or more switches in the switching circuit.

Abstract: A MEMS resonator has a component which provides a capacitance associated with the transduction gap which has a temperature-dependent dielectric characteristic, which varies in the same direction (i.e. the slope has the same sign) as the Young's modulus of the material of the resonator versus temperature. This means that the resonant frequency is less dependent on temperature.

Abstract: The present invention provides a capacitive RF-MEMS device comprising a vertically integrated decoupling capacitor (14). The decoupling capacitor (14) therefore does not take extra area. Furthermore, the RF-MEMS according to the invention needs less interconnects, which also saves space and which reduces the series inductance/resistance in the RF path.