Abstract: A method of manufacturing a distributed Bragg reflector (DBR) in group III-V semiconductor compounds with improved optical and electrical characteristics is provided. A selected DBR structure is achieved by sequential exposure of a substrate to predetermined combinations of the elemental sources to produce a pair of DBR layers of compound alloys and a graded region including one or more discrete additional layers between the DBR layers of intermediate alloy composition. Exposure durations and combinations of the elemental sources in each exposure are predetermined by DBR design characteristics.

Abstract: A VCSEL waveguide grating coupler is provided such that a first and second mirror are positioned to define a resonant cavity between them. The waveguide grating coupler further includes a waveguide having a first grating formed as a part of the waveguide to couple light of a first polarization mode into the waveguide. A second grating is formed on the waveguide grating coupler and is orthogonal to the first grating. The second grating is operative to enhance the light coupled to the waveguide by creating a loss difference between light of the first polarization mode and light of a second polarization mode, so that light of the first polarization mode lases preferentially within the VCSEL.

Abstract: An optical coupler comprises first and second mirrors. The first mirror is positioned with respect to the second mirror so that a resonant cavity is defined between them. A waveguide structure is positioned in the resonant cavity and includes a photonic crystal coupler. A thickness of the resonant cavity is selected so that a phase matching condition is satisfied for resonance in the resonant cavity. At least one of the first and second mirrors may be formed from a structure in an optoelectronic device. Alternatively, at least one of the first and second mirrors is formed from a semiconductor layer. At least one of the first and second mirrors may be formed as a semiconductor distributed bragg reflector, or as a dielectric distributed bragg reflector. At least one of the first and second mirrors may be a mirror in a vertical cavity surface emitting laser (VCSEL) structure.

Abstract: A wavelength division multiplexing (WDM) module for transmitting and/or receiving multiple signals simultaneously includes an array of vertical cavity surface emitting lasers (VCSELs) and/or photodetectors, respectively. In the transmitter case, different VCSELs are operated at different wavelengths that change depending on a value of a condition such as temperature and/or one or more other parameters. Multiple VCSELs are assigned to each channel of the WDM. The currently active VCSEL is switched to a different VCSEL assigned to a same channel and preferably having an operating wavelength that is closer to the signal wavelength at the current measured or estimated temperature and/or other parameter value. Multiple photodetectors are assigned to each channel of the WDM, and currently active detector is switched to the second detector within the same channel.

Abstract: A high-power coherent array of Vertical Cavity Surface Emitter Lasers is described in which a plurality of Vertical Cavity Surface Emitting Lasers (VCSELs) are provided along with a structure which optically couples each of the VCSELs the plurality of VCSELs to one another by a predetermined amount to cause a coherent mode locking condition to occur. The coupling structure can be a beam cube, a plurality of smaller bean cubes, or a waveguide/grating system, for example. A reference source, or controlled coupling among the VCSELs, is used to phase lock the VCSELs to one another.

Abstract: An optical coupler comprises first and second mirrors. The first mirror is positioned with respect to the second mirror so that a resonant cavity is defined between them. A waveguide structure is positioned in the resonant cavity and includes a surface-normal grating structure. A thickness of the resonant cavity is selected so that a phase matching condition is satisfied for resonance in the resonant cavity. At least one of the first and second mirrors may be formed from a structure in an optoelectronic device. Alternatively, at least one of the first and second mirrors is formed from a semiconductor layer. At least one of the first and second mirrors may be formed as a semiconductor distributed bragg reflector, or as a dielectric distributed bragg reflector. At least one of the first and second mirrors may be a mirror in a vertical cavity surface emitting laser (VCSEL) structure.