Patents by Inventor Peter H. Bartlau

Peter H. Bartlau has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Protection of photomasks from 193nm radiation damage using thin coatings of ALD Al2O3
    Patent number: 11143953
    Abstract: The invention relates to a method used in a photolithographic process comprising depositing a film of Atomic Layered Deposition (ALD) Al2O3 on a photomask, subjecting said film of Al2O3 on the photomask to a plasma treatment and then irradiating the deposited film of ALD Al2O3 on the coated photomask at a wavelength of 193 nm.
    Type: Grant
    Filed: March 21, 2019
    Date of Patent: October 12, 2021
    Assignee: International Business Machines Corporation
    Inventors: Robert L. Sandstrom, Peter H. Bartlau, Thomas B. Faure, Supratik Guha, Edward W. Kiewra, Louis M. Kindt, Alfred Wagner
  • PROTECTION OF PHOTOMASKS FROM 193nm RADIATION DAMAGE USING THIN COATINGS OF ALD Al2O3.
    Publication number: 20200301270
    Abstract: The invention relates to a method used in a photolithographic process comprising depositing a film of Atomic layered Deposition (ALD) Al2O3 on a photomask, subjecting said film of Al2O3 on the photomask to a plasma treatment and then irradiating the deposited film of ALD Al2O3 on the coated photomask at a wavelength of 193 nm.
    Type: Application
    Filed: March 21, 2019
    Publication date: September 24, 2020
    Inventors: Robert L. Sandstrom, Peter H. Bartlau, Thomas B. Faure, Supratik Guha, Edward W. Kiewra, Louis M. Kindt, Alfred Wagner
  • Techniques for reducing degradation and/or modifying feature size of photomasks
    Patent number: 8568959
    Abstract: A photomask includes a light transmitting substrate and an absorber layer adjacent thereto. The absorber layer includes a silicide, such as molybdenum silicide, patterned into a plurality of features. The surrounding environment is controlled to prevent undesirable growth by oxidation of the absorber layer when the mask is exposed to light while being used to fabricate integrated circuits. In another aspect, the surrounding environment is controlled to encourage desirable growth by oxidation of the absorber layer when the mask is exposed to light.
    Type: Grant
    Filed: October 3, 2008
    Date of Patent: October 29, 2013
    Assignee: International Business Machines Corporation
    Inventors: Peter H. Bartlau, Thomas B. Faure, Alfred Wagner
  • TECHNIQUES FOR REDUCING DEGRADATION AND/OR MODIFYING FEATURE SIZE OF PHOTOMASKS
    Publication number: 20100086876
    Abstract: A photomask includes a light transmitting substrate and an absorber layer adjacent thereto. The absorber layer includes a silicide, such as molybdenum silicide, patterned into a plurality of features. The surrounding environment is controlled to prevent undesirable growth by oxidation of the absorber layer when the mask is exposed to light while being used to fabricate integrated circuits. In another aspect, the surrounding environment is controlled to encourage desirable growth by oxidation of the absorber layer when the mask is exposed to light.
    Type: Application
    Filed: October 3, 2008
    Publication date: April 8, 2010
    Applicant: International Business Machines Corporation
    Inventors: Peter H. Bartlau, Thomas B. Faure, Alfred Wagner
  • Method for limiting divot formation in post shallow trench isolation processes
    Patent number: 6541351
    Abstract: A method for limiting divot formation in shallow trench isolation structures. The method includes: providing a trench formed in a silicon region with a deposited oxide; oxidizing a top layer of the silicon region to form a layer of thermal oxide on top of the silicon region; and selectively etching the thermal oxide with respect to the deposited oxide.
    Type: Grant
    Filed: November 20, 2001
    Date of Patent: April 1, 2003
    Assignee: International Business Machines Corporation
    Inventors: Peter H. Bartlau, Marc W. Cantell, Jerome B. Lasky, James D. Weil