Abstract: A method is disclosed in which the speed of the substrate carrier system 50 is changed during exposure depending on the exposure pattern density. The substrate carrier system 50 defines a track curve 60, whereby the exposure pattern is exposed within a band (621, 622, . . . 623) around the track curve.

Abstract: The invention refers to a method for exposing a layout comprising multiple layers on a wafer, in which at least one layer is exposed photolithographically and subsequently at least one further layer is exposed with an electron beam, and the wafer is to be aligned in defined fashion with respect to the electron beam exposure system in terms of the previously photolithographically exposed layer. It is provided according to the present invention that before electron beam exposure begins, an alignment of the wafer (global alignment) is performed on the basis of structural features that were previously generated on the wafer by photolithographic exposure. For example, the wafer is first positioned coarsely in such a way that a surface area having selected structural features is located in the deflection region of the electron beam.

Abstract: The invention concerns a method for exposing a substrate (1) equipped with an n-layer photoresist system (2), an electrically conductive connection being created between a ground potential and the substrate (1) and/or at least one of the layers S1 through Sn of the photoresist system (2). The invention furthermore concerns an arrangement for carrying out said method. According to the present invention, what is achieved in a single process step is that by way of spring elements E1 through E4, a contact tip K1 is advanced as far as the layer S1, a contact tip K2 is advanced through the layer S1 as far as the layer S2, a contact tip K3 is advanced through the layer S1 and S2 as far as the layer S3, and so forth. The electrical charges from the layer S1 are dissipated to the ground potential via the contact tip K1, the charges from the layer S2 via the contact tip K2, etc., and/or and from the substrate (1) via a contact tip K4.

Abstract: The invention refers to a method for exposing a layout comprising multiple layers on a wafer, in which at least one layer is exposed photolithographically and subsequently at least one further layer is exposed with an electron beam, and the wafer is to be aligned in defined fashion with respect to the electron beam exposure system in terms of the previously photolithographically exposed layer.