Abstract: The present invention relates to a device for detecting millimeter waves, having at least one field effect transistor with a source, a drain, a gate, a gate-source contact, a source-drain channel, and a gate-drain contact. Compared to a similar such device, the problem addressed by the present invention, among others, is that of providing a device which enables the provision of a field effect transistor for detecting the power and/or phase of electromagnetic radiation in the Thz frequency range. In order to create such a device, it is suggested according to the invention, that a device be provided which has an antenna structure wherein the field effect transistor is connected to the antenna structure in such a manner that an electromagnetic signal received by the antenna structure in the THz range is fed into the field effect transistor via the gate-source contact, and wherein the field effect transistor and the antenna structure are arranged together on a single substrate.

Abstract: A phase change memory having a memory material layer consisting of a phase change material, and a first and second electrical contact which are located at a distance from one another and via which a switching zone of the memory material layer can be traversed by a current signal, wherein the current signal can be used to induce a reversible phase change between a crystalline phase and an amorphous phase and thus a change in resistance of the phase change material in the switching zone. The invention also relates to a phase change memory assembly, a phase change memory cell, a 2D phase change memory cell array, a 3D phase change memory cell array and an electronic component.

Abstract: The present invention relates to a device for detecting millimeter waves, having at least one field effect transistor with a source, a drain, a gate, a gate-source contact, a source-drain channel, and a gate-drain contact. Compared to a similar such device, the problem addressed by the present invention, among others, is that of providing a device which enables the provision of a field effect transistor for detecting the power and/or phase of electromagnetic radiation in the Thz frequency range. In order to create such a device, it is suggested according to the invention, that a device be provided which has an antenna structure wherein the field effect transistor is connected to the antenna structure in such a manner that an electromagnetic signal received by the antenna structure in the THz range is fed into the field effect transistor via the gate-source contact, and wherein the field effect transistor and the antenna structure are arranged together on a single substrate.

Abstract: A phase change memory having a memory material layer consisting of a phase change material, and a first and second electrical contact which are located at a distance from one another and via which a switching zone of the memory material layer can be traversed by a current signal, wherein the current signal can be used to induce a reversible phase change between a crystalline phase and an amorphous phase and thus a change in resistance of the phase change material in the switching zone. The invention also relates to a phase change memory assembly, a phase change memory cell, a 2D phase change memory cell array, a 3D phase change memory cell array and an electronic component.

Abstract: The invention relates to an organic field-effect transistor, to a method for structuring an OFET and to an integrated circuit with improved structuring of the functional polymer layers. The improved structuring is obtained by introducing, using a doctor blade, the functional polymer in the mold layer in which recesses are initially produced by imprinting.

Abstract: The invention relates to a method for proving the existence of a polynucleotide sequence A in a sample containing a plurality of identical or different polynucleotide sequences X as individual strands and where the polynucleotide sequence A may be identical with one of the polynucleotide sequences X or may be contained as a sequence portion in one of the polynucleotide sequences X, through the inquiry of the state of linkage of the polynucleotide sequences X contained in the sample to a known test polynucleotide sequence B complementary to the polynucleotide sequence A, comprising the following steps: preparation of a test medium containing as individual strands test polynucleotide sequences B complementary to the polynucleotide sequence A which is to be proven, establishing contact of the sample with the test medium by placing the sample into or onto the test medium such that the individual strands of the polynucleotide sequences X contained in the sample may bind to the complementary test polynucleotide seq

Abstract: The invention relates to an organic fieId-effect transistor, to a method for structuring an OFET and to an integrated circuit with improved structuring of the functional polymer layers. The improved structuring is obtained by introducing, using a doctor blade, the functional polymer in the mold layer in which recesses are initially produced by imprinting.

Abstract: The invention relates to a method for proving the existence of a polynucleotide sequence A in a sample containing a plurality of identical or different polynucleotide sequences X as individual strands and where the polynucleotide sequence A may be identical with one of the polynucleotide sequences X or may be contained as a sequence portion in one of the polynucleotide sequences X, through the inquiry of the state of linkage of the polynucleotide sequences X contained in the sample to a known test polynucleotide sequence B complementary to the polynucleotide sequence A, comprising the following steps: preparation of a test medium containing as individual strands test polynucleotide sequences B complementary to the polynucleotide sequence A which is to be proven, establishing contact of the sample with the test medium by placing the sample into or onto the test medium such that the individual strands of the polynucleotide sequences X contained in the sample may bind to the complementary test polynucleotide seq