Abstract: A radiation-emitting semiconductor chip includes a semiconductor body with a semiconductor layer sequence, wherein the semiconductor body with the semiconductor layer sequence extends in a vertical direction between a first major face and a second major face; the semiconductor layer sequence includes an active region that generates radiation, a first region of a first conduction type and a second region of a second conduction type differing from the first conduction type; the first region extends in a vertical direction between the first major face and the active region; the second region extends in a vertical direction between the second major face and the active region; at least one layer of the active region is based on an arsenide compound semiconductor material; and relative to its respective extent in the vertical direction, the first region or the second region is based in a proportion of at least half on a phosphide compound semiconductor material.

Abstract: An LED semiconductor body includes a semiconductor layer sequence which comprises a quantum structure which is intended to produce radiation and comprises at least one quantum layer and at least one barrier layer, wherein the quantum layer and the barrier layer are strained with mutually opposite mathematical signs.

Abstract: An LED semiconductor element including at least one first radiation-generating active layer and at least one second radiation-generating active layer which is stacked above the first active layer in a vertical direction and is connected in series with the first active layer, wherein the first active layer and the second active layer are electrically conductively connected by a contact zone.

Abstract: An LED semiconductor element comprising at least one first radiation-generating active layer and at least one second radiation-generating active layer which is stacked above the first active layer in a vertical direction and is connected in series with the first active layer, wherein the first active layer and the second active layer are electrically conductively connected by means of a contact zone.

Abstract: An LED semiconductor element having at least one first radiation-generating active layer and at least one second radiation-generating active layer which is stacked above the first active layer in a vertical direction and is connected in series with the first active layer. The first active layer and the second active layer are electrically conductively connected by a contact zone.

Abstract: An LED semiconductor body comprising a first radiation-generating active layer and a second radiation-generating active layer, the first active layer and the second active layer being arranged one above another in the vertical direction.

Abstract: A semiconductor substrate, of GaAs with a semiconductor layer sequence applied on top of the substrate. The semiconductor layer sequence comprises a plurality of semiconductor layers of Al1-yGayAs1-xPx with 0?x?1 and 0?y?1. A number of the semiconductor layers respectively comprising a phosphorus component x which is greater than in a neighboring semiconductor layer lying thereunder in the direction of growth of the semiconductor layer sequence. Two semiconductor layers directly preceding the uppermost semiconductor layer of the semiconductor layer sequence have a smaller lattice constant than the uppermost layer.

Abstract: A semiconductor substrate, of GaAs with a semiconductor layer sequence applied on top of the substrate. The semiconductor layer sequence comprises a plurality of semiconductor layers of Al1-yGayAs1-xPx with 0?x?1 and 0?y?1. A number of the semiconductor layers respectively comprising a phosphorus component x which is greater than in a neighboring semiconductor layer lying thereunder in the direction of growth of the semiconductor layer sequence. Two semiconductor layers directly preceding the uppermost semiconductor layer of the semiconductor layer sequence have a smaller lattice constant than the uppermost layer.

Abstract: An LED semiconductor element comprising at least one first radiation-generating active layer and at least one second radiation-generating active layer which is stacked above the first active layer in a vertical direction and is connected in series with the first active layer, wherein the first active layer and the second active layer are electrically conductively connected by means of a contact zone.

Abstract: An LED semiconductor body includes a semiconductor layer sequence which comprises a quantum structure which is intended to produce radiation and comprises at least one quantum layer and at least one barrier layer, wherein the quantum layer and the barrier layer are strained with mutually opposite mathematical signs.

Abstract: An LED semiconductor body comprising a first radiation-generating active layer and a second radiation-generating active layer, the first active layer and the second active layer being arranged one above another in the vertical direction.

Abstract: A light-emitting diode based on GaAlAs has a window layer (5) of reduced thickness and is doped continuously with Si or Sn. The net concentration of the doping is less than 1 ×1018 cm?3. This provision lessens the degradation of the light-emitting diode (1).

Abstract: A semiconductor substrate (1) of GaAs with a semiconductor layer sequence (2) applied on top. The semiconductor layer sequence (2) contains a plurality of semiconductor layers (3, 4, 5, 6, 7) of Al1?yGayAs1?xPx with 0?x?1 and 0?y?1, the phosphorus component x in a number of the semiconductor layers respectively being greater than in a neighboring semiconductor layer lying thereunder in the direction of growth. Such a semiconductor substrate may be advantageously used as a quasi-substrate substrate (8) for growing further semiconductor layers (28) which have a smaller lattice constant than GaAs.

Abstract: A luminescent diode, based on GaAlAs comprises a window layer (5) with reduced thickness and doped throughout with Si or Sn. The net concentration of the doping is less than 1×1018 cm−3. The degradation of the luminescent diode (1) is thus reduced.

Abstract: A semiconductor configuration has a substrate made of GaP and an epitaxial layer on the substrate. The expitaxial layer has an n-doped partial layer and a p-doped partial layer. A pn junction is formed at the boundary between the two partial layers. The epitaxial layer contains an impurity which is an element from the 3rd main group and/or from the 5th main group which is not identical to N. The impurity is present at a maximum concentration in the GaP epitaxial layer of between 1017 and 1018 cm−3.