Patents by Inventor Peter Hesemann

Peter Hesemann has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10799850
    Abstract: The subject of the present invention is the use of a porous or non-porous organosilicon material for eliminating radionuclides, mineral anions, anionic molecular entities and negatively charged dyes or active principles from an aqueous solution, characterized in that the structure of said organosilicon material is formed of repeat units, each repeat unit comprising at least one positively charged entity selected from an ammonium entity, an imidazolium entity, a guanidinium entity, a pyridinium entity and a phosphonium entity and being incorporated into a silicon network by at least two silicon-carbon bonds. The invention also relates to a specific novel organosilicon material, comprising at least one benzyl group, one 4-phenylbenzyl group or one styrene group in each repeat unit.
    Type: Grant
    Filed: July 26, 2016
    Date of Patent: October 13, 2020
    Assignees: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, UNIVERSITE DE MONTPELLIER, AXLR, SATT DU LANGUEDOC ROUSSILON (SATT AXLR)
    Inventors: Bénédicte Prelot, Peter Hesemann, Ut Dong Thach, Jerzy Zajac
  • Publication number: 20180207612
    Abstract: The subject of the present invention is the use of a porous or non-porous organosilicon material for eliminating radionuclides, mineral anions, anionic molecular entities and negatively charged dyes or active principles from an aqueous solution, characterized in that the structure of said organosilicon material is formed of repeat units, each repeat unit comprising at least one positively charged entity selected from an ammonium entity, an imidazolium entity, a guanidinium entity, a pyridinium entity and a phosphonium entity and being incorporated into a silicon network by at least two silicon-carbon bonds. The invention also relates to a specific novel organosilicon material, comprising at least one benzyl group, one 4-phenylbenzyl group or one styrene group in each repeat unit.
    Type: Application
    Filed: July 26, 2016
    Publication date: July 26, 2018
    Inventors: Bénédicte PRELOT, Peter HESEMANN, Ut Dong THACH, Jerzy ZAJAC
  • Patent number: 7892851
    Abstract: The present invention relates to compounds which can go to make up mesostructured porous hybrid organic-inorganic materials (MPHOIMs) and can serve, within these materials, as probe molecules for the detection or quantitative determination of halogenated gaseous compounds. It also relates to MPHOIMs in which these compounds are grafted by covalent or iono-covalent bonding, to a process for manufacturing these MPHOIMs, and also to chemical sensors for the detection or quantitative determination of halogenated gaseous compounds and comprising these MPHOIMs as sensitive materials. The invention applies, in particular, to the detection and quantitative determination of halogenated gaseous compounds used in the microelectronics field and, more especially, halogenated boron complexes.
    Type: Grant
    Filed: April 15, 2005
    Date of Patent: February 22, 2011
    Assignees: Commissariat a l'Energie Atomique, Centre National de la Recherche, Universite Pierre et Marie Curie (Paris VI)
    Inventors: Thu-Hoa Tran-Thi, Clement Sanchez, Lionel Nicole, Peter Hesemann
  • Publication number: 20070214867
    Abstract: The present invention relates to compounds which can go to make up mesostructured porous hybrid organic-inorganic materials (MPHOIMs) and can serve, within these materials, as probe molecules for the detection or quantitative determination of halogenated gaseous compounds. It also relates to MPHOIMs in which these compounds are grafted by covalent or iono-covalent bonding, to a process for manufacturing these MPHOIMs, and also to chemical sensors for the detection or quantitative determination of halogenated gaseous compounds and comprising these MPHOIMs as sensitive materials. The invention applies, in particular, to the detection and quantitative determination of halogenated gaseous compounds used in the microelectronics field and, more especially, halogenated boron complexes.
    Type: Application
    Filed: April 15, 2005
    Publication date: September 20, 2007
    Applicants: COMMISSARIAT A L'ENERGIE ATOKMIQUE, CENTRE NATIONAL DE LA RECHERCHE, UNIVERSITE PIERRE ET MARIE CURIE (PARIS VI)
    Inventors: Thu-Hoa Tran-Thi, Clement Sanchez, Lionel Nicole, Peter Hesemann