Patents by Inventor Peter Holverson

Peter Holverson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9117884
    Abstract: A layer of diffusion barrier or seed material is deposited on a semiconductor substrate having a recessed feature. The method may include a series of new deposition cycles, for example, a first net deposition cycle and a second net deposition cycle. The first net deposition cycle includes depositing a first deposited amount of the diffusion barrier or seed material and etching a first etched amount of the diffusion barrier or seed material. The second net deposition cycle including depositing a second deposited amount of the diffusion barrier or seed material and etching a second etched amount of the diffusion barrier or seed material. At least one of the process parameters of the first cycle differs from that of the second allows providing a graded deposition effects to reduce a risk of damaging any under layers and dielectric. A deposited layer of diffusion barrier or seed material is generally more conformal.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: August 25, 2015
    Assignee: Novellus Systems, Inc.
    Inventors: Roey Shaviv, Sanjay Gopinath, Peter Holverson, Anshu A. Pradhan
  • Patent number: 8298933
    Abstract: A layer of diffusion barrier or seed material is deposited on a semiconductor substrate having a recessed feature. The method may include a series of new deposition cycles, for example, a first net deposition cycle and a second net deposition cycle. The first net deposition cycle includes depositing a first deposited amount of the diffusion barrier or seed material and etching a first etched amount of the diffusion barrier or seed material. The second net deposition cycle including depositing a second deposited amount of the diffusion barrier or seed material and etching a second etched amount of the diffusion barrier or seed material. At least one of the process parameters of the first cycle differs from that of the second allows providing a graded deposition effects to reduce a risk of damaging any under layers and dielectric. A deposited layer of diffusion barrier or seed material is generally more conformal.
    Type: Grant
    Filed: May 15, 2009
    Date of Patent: October 30, 2012
    Assignee: Novellus Systems, Inc.
    Inventors: Roey Shaviv, Sanjay Gopinath, Peter Holverson, Anshu A. Pradhan
  • Publication number: 20100009533
    Abstract: A layer of diffusion barrier or seed material is deposited on a semiconductor substrate having a recessed feature. The method may include a series of new deposition cycles, for example, a first net deposition cycle and a second net deposition cycle. The first net deposition cycle includes depositing a first deposited amount of the diffusion barrier or seed material and etching a first etched amount of the diffusion barrier or seed material. The second net deposition cycle including depositing a second deposited amount of the diffusion barrier or seed material and etching a second etched amount of the diffusion barrier or seed material. At least one of the process parameters of the first cycle differs from that of the second allows providing a graded deposition effects to reduce a risk of damaging any under layers and dielectric. A deposited layer of diffusion barrier or seed material is generally more conformal.
    Type: Application
    Filed: May 15, 2009
    Publication date: January 14, 2010
    Applicant: NOVELLUS SYSTEMS, INC.
    Inventors: Roey Shaviv, Sanjay Gopinath, Peter Holverson, Anshu A. Pradhan