Abstract: Integrated circuit structures having gate cut plugs removed from trench contacts, and methods of fabricating integrated circuit structures having gate cut plugs removed from trench contacts, are described. For example, an integrated circuit structure includes a vertical stack of horizontal nanowires. A gate electrode is over the vertical stack of horizontal nanowires. A conductive trench contact is adjacent to the gate electrode. A dielectric sidewall spacer is between the gate electrode and the conductive trench contact. A gate cut plug extends through the gate electrode and the dielectric sidewall spacer. The gate cut plug extends into but not entirely through the conductive trench contact.

Abstract: A hollow core optical waveguide comprises a hollow core; and a structured arrangement of longitudinally extending capillaries surrounding the hollow core to form a cladding; wherein one or both of the hollow core and the cladding contains gas configured to provide a refractive index difference between the hollow core and the cladding.