Abstract: A package-level, integrated high-vacuum ion-chip enclosure having improved thermal characteristics is disclosed. Enclosures in accordance with the present invention include first and second chambers that are located on opposite sides of a chip carrier, where the chambers are fluidically coupled via a conduit through the chip carrier. The ion trap is located in the first chamber and disposed on the chip carrier. A source for generating an atomic flux is located in the second chamber. The separation of the source and ion trap in different chambers affords thermal isolation between them, while the conduit between the chambers enables the ion trap to receive the atomic flux.

Abstract: A method for reducing the fogging effect in an electron beam lithography system wherein the exposure is controlled in order to obtain resulting pattern after processing which conforms to design data. A model for the fogging effect is fitted by individually changing at least the basic input parameters of the control function, the function type is chosen in accordance to the Kernel type used in the proximity corrector. The proximity effect is considered as well and an optimized set of parameters is obtained in order to gain a common control function for the proximity and fogging effect. The pattern writing with an e-beam lithographic system is controlled by the single combined proximity effect control function and the fogging effect control function in only one data-processing step using the same algorithms as are implemented in a standard proximity corrector.

Abstract: A process for controlling the proximity effect correction in an electron beam lithography system. The exposure is controlled in order to obtain resulting pattern after processing which is conform to design data. In a first step an arbitrary set patterns is exposed without applying the process for controlling the proximity correction. The geometry of the resulting test structures is measured and a set of measurement data is obtained. Within a numerical range basic input parameters for the parameters ?, ? and ?, are derived from the set of measurement data. A model is fitted by individually changing at least the basic input parameters ?, ? and ? of a control function to measurement data set and thereby obtaining an optimised set of parameters. The correction function is applied to an exposure control of the electron beam lithography system during the exposure of a pattern according to the design data.

Abstract: The invention relates to a device and a method for maskless microlithography. Several microstructured cantilevers (2) are arranged in an array (26) and an actuator is integrated in each of the cantilevers (2) of the array (26). A power supply and control unit (24) is provided, said unit adjusting the distance of the cantilevers (6) relative to a surface (4) that is to be structured by means of an appropriate voltage. Every point of the needles (6) is connected to said power supply and control unit (24). In order to implement the inventive method, an array (26) with cantilevers, each of which carries a point of a needle (6), is brought into contact with a surface (4) to be structured in such a way that the points of the needles (6) are arranged close to the surface (4) to be structured.

Abstract: Method for reducing the fogging effect in an electron beam lithography system wherein the exposure is controlled in order to obtain resulting pattern after processing which are conform to design data. A model for the fogging effect is fitted by individually changing at least the basic input parameters of the control function, the function type is chosen in accordance to the Kernel type used in the proximity corrector. The proximity effect is considered as well and an optimised set of parameters is obtained in order to gain a common control function for the proximity and fogging effect. The pattern writing with an e-beam lithographic system is controlled by the single combined proximity effect control function and the fogging effect control function in only one data-processing step using the same algorithms as are implemented in a standard proximity corrector.

Abstract: A process for controlling the proximity effect correction in an electron beam lithography system. The exposure is controlled in order to obtain resulting pattern after processing which is conform to design data. In a first step an arbitrary set patterns is exposed without applying the process for controlling the proximity correction. The geometry of the resulting test structures is measured and a set of measurement data is obtained. Within a numerical range basic input parameters for the parameters ?, ? and ?, are derived from the set of measurement data. A model is fitted by individually changing at least the basic input parameters ?, ? and ? of a control function to measurement data set and thereby obtaining an optimised set of parameters. The correction function is applied to an exposure control of the electron beam lithography system during the exposure of a pattern according to the design data.

Abstract: The invention relates to a device and a method for maskless microlithography. Several microstructured cantilevers (2) are arranged in an array (26) and an actuator is integrated in each of the cantilevers (2) of the array (26). A power supply and control unit (24) is provided, said unit adjusting the distance of the cantilevers (6) relative to a surface (4) that is to be structured by means of an appropriate voltage. Every point of the needles (6) is connected to said power supply and control unit (24). In order to implement the inventive method, an array (26) with cantilevers, each of which carries a point of a needle (6), is brought into contact with a surface (4) to be structured in such a way that the points of the needles (6) are arranged close to the surface (4) to be structured.

Abstract: In order to process a carbon film carbon is deposited on a substrate by sputtering from a carbon sputter target in a gas mixture which contains nitrogen in a minimum proportion of 20% and a sputter gas at a predetermined gas pressure and the substrate is then subjected under a high vacuum to thermal treatment at a temperature above 100.degree. C. The carbon films produced in this manner comprise a fiber and/or tube structure which extends substantially perpendicular to the film.