Patents by Inventor Peter I. Porshnev
Peter I. Porshnev has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11450509Abstract: A method and apparatus for plasma processing of substrates is provided. A processing chamber has a substrate support and a lid assembly facing the substrate support. The lid assembly has a plasma source that comprises a coil disposed within a conductive plate, which may comprise nested conductive rings. The coil is substantially coplanar with the conductive plate, and insulated therefrom by an insulator that fits within a channel formed in the conductive plate, or nests within the conductive rings. A field concentrator is provided around the coil, and insulated therefrom by isolators. The plasma source is supported from a conductive support plate. A gas distributor supplies gas to the chamber through a central opening of the support plate and plasma source from a conduit disposed through the conductive plate.Type: GrantFiled: January 6, 2020Date of Patent: September 20, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Canfeng Lai, Jeffrey Tobin, Peter I. Porshnev, Jose Antonio Marin
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Publication number: 20200144027Abstract: A method and apparatus for plasma processing of substrates is provided. A processing chamber has a substrate support and a lid assembly facing the substrate support. The lid assembly has a plasma source that comprises a coil disposed within a conductive plate, which may comprise nested conductive rings. The coil is substantially coplanar with the conductive plate, and insulated therefrom by an insulator that fits within a channel formed in the conductive plate, or nests within the conductive rings. A field concentrator is provided around the coil, and insulated therefrom by isolators. The plasma source is supported from a conductive support plate. A gas distributor supplies gas to the chamber through a central opening of the support plate and plasma source from a conduit disposed through the conductive plate.Type: ApplicationFiled: January 6, 2020Publication date: May 7, 2020Inventors: Canfeng LAI, Jeffrey TOBIN, Peter I. PORSHNEV, Jose Antonio MARIN
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Patent number: 10529541Abstract: A method and apparatus for plasma processing of substrates is provided. A processing chamber has a substrate support and a lid assembly facing the substrate support. The lid assembly has a plasma source that comprises a coil disposed within a conductive plate, which may comprise nested conductive rings. The coil is substantially coplanar with the conductive plate, and insulated therefrom by an insulator that fits within a channel formed in the conductive plate, or nests within the conductive rings. A field concentrator is provided around the coil, and insulated therefrom by isolators. The plasma source is supported from a conductive support plate. A gas distributor supplies gas to the chamber through a central opening of the support plate and plasma source from a conduit disposed through the conductive plate.Type: GrantFiled: March 17, 2017Date of Patent: January 7, 2020Assignee: APPLIED MATERIALS, INC.Inventors: Canfeng Lai, Jeffrey Tobin, Peter I. Porshnev, Jose Antonio Marin
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Patent number: 10233538Abstract: Embodiments described herein provide methods and apparatus for treating a magnetic substrate having an imprinted, oxygen-reactive mask formed thereon by implanting ions into a magnetically active surface of the magnetic substrate through the imprinted oxygen-reactive mask, wherein the ions do not reduce the oxygen reactivity of the mask, and removing the mask by exposing the substrate to an oxygen-containing plasma. The mask may be amorphous carbon, through which carbon-containing ions are implanted into the magnetically active surface. The carbon-containing ions, which may also contain hydrogen, may be formed by activating a mixture of hydrocarbon gas and hydrogen. A ratio of the hydrogen and the hydrocarbon gas may be selected or adjusted to control the ion implantation.Type: GrantFiled: June 27, 2016Date of Patent: March 19, 2019Assignee: APPLIED MATERIALS, INC.Inventors: Martin A. Hilkene, Roman Gouk, Matthew D. Scotney-Castle, Peter I. Porshnev
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Publication number: 20170206922Abstract: A method and apparatus for forming magnetic media substrates is provided. A patterned resist layer is formed on a substrate having a magnetically susceptible layer. A conformal protective layer is formed over the patterned resist layer to prevent degradation of the pattern during subsequent processing. The substrate is subjected to an energy treatment wherein energetic species penetrate portions of the patterned resist and conformal protective layer according to the pattern formed in the patterned resist, impacting the magnetically susceptible layer and modifying a magnetic property thereof. The patterned resist and conformal protective layers are then removed, leaving a magnetic substrate having a pattern of magnetic properties with a topography that is substantially unchanged.Type: ApplicationFiled: March 30, 2017Publication date: July 20, 2017Inventors: Christopher Dennis BENCHER, Roman GOUK, Steven VERHAVERBEKE, Li-Qun XIA, Yong-Won LEE, Matthew D. SCOTNEY-CASTLE, Martin A. HILKENE, Peter I. PORSHNEV
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Publication number: 20170194128Abstract: A method and apparatus for plasma processing of substrates is provided. A processing chamber has a substrate support and a lid assembly facing the substrate support. The lid assembly has a plasma source that comprises an inductive coil disposed within a conductive plate, which may comprise nested conductive rings. The inductive coil is substantially coplanar with the conductive plate, and insulated therefrom by an insulator that fits within a channel formed in the conductive plate, or nests within the conductive rings. A field concentrator is provided around the inductive coil, and insulated therefrom by isolators. The plasma source is supported from a conductive support plate. A gas distributor supplies gas to the chamber through a central opening of the support plate and plasma source from a conduit disposed through the conductive plate.Type: ApplicationFiled: March 17, 2017Publication date: July 6, 2017Inventors: Canfeng LAI, Jeffrey TOBIN, Peter I. PORSHNEV, Jose Antonio MARIN
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Patent number: 9646642Abstract: A method and apparatus for forming magnetic media substrates is provided. A patterned resist layer is formed on a substrate having a magnetically susceptible layer. A conformal protective layer is formed over the patterned resist layer to prevent degradation of the pattern during subsequent processing. The substrate is subjected to an energy treatment wherein energetic species penetrate portions of the patterned resist and conformal protective layer according to the pattern formed in the patterned resist, impacting the magnetically susceptible layer and modifying a magnetic property thereof. The patterned resist and conformal protective layers are then removed, leaving a magnetic substrate having a pattern of magnetic properties with a topography that is substantially unchanged.Type: GrantFiled: January 31, 2014Date of Patent: May 9, 2017Assignee: Applied Materials, Inc.Inventors: Christopher Dennis Bencher, Roman Gouk, Steven Verhaverbeke, Li-Qun Xia, Yong-Won Lee, Matthew D. Scotney-Castle, Martin A. Hilkene, Peter I. Porshnev
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Patent number: 9478437Abstract: Methods for repairing low-k dielectrics using a plasma immersion carbon doping process are provided herein. In some embodiments, a method of repairing a low-k dielectric material disposed on a substrate having one or more features disposed through the low-k dielectric material may include depositing a conformal oxide layer on the low-k dielectric material and within the one or more features; and doping the conformal oxide layer with carbon using a plasma doping process.Type: GrantFiled: June 1, 2011Date of Patent: October 25, 2016Assignee: APPLIED MATERIALS, INC.Inventors: Daping Yao, Peter I. Porshnev
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Publication number: 20160305013Abstract: Embodiments described herein provide methods and apparatus for treating a magnetic substrate having an imprinted, oxygen-reactive mask formed thereon by implanting ions into a magnetically active surface of the magnetic substrate through the imprinted oxygen-reactive mask, wherein the ions do not reduce the oxygen reactivity of the mask, and removing the mask by exposing the substrate to an oxygen-containing plasma. The mask may be amorphous carbon, through which carbon-containing ions are implanted into the magnetically active surface. The carbon-containing ions, which may also contain hydrogen, may be formed by activating a mixture of hydrocarbon gas and hydrogen. A ratio of the hydrogen and the hydrocarbon gas may be selected or adjusted to control the ion implantation.Type: ApplicationFiled: June 27, 2016Publication date: October 20, 2016Inventors: Martin A. HILKENE, Roman GOUK, Matthew D. SCOTNEY-CASTLE, Peter I. PORSHNEV
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Patent number: 9376746Abstract: Embodiments described herein provide methods and apparatus for treating a magnetic substrate having an imprinted, oxygen-reactive mask formed thereon by implanting ions into a magnetically active surface of the magnetic substrate through the imprinted oxygen-reactive mask, wherein the ions do not reduce the oxygen reactivity of the mask, and removing the mask by exposing the substrate to an oxygen-containing plasma. The mask may be amorphous carbon, through which carbon-containing ions are implanted into the magnetically active surface. The carbon-containing ions, which may also contain hydrogen, may be formed by activating a mixture of hydrocarbon gas and hydrogen. A ratio of the hydrogen and the hydrocarbon gas may be selected or adjusted to control the ion implantation.Type: GrantFiled: December 14, 2012Date of Patent: June 28, 2016Assignee: APPLIED MATERIALS, INC.Inventors: Martin A. Hilkene, Roman Gouk, Matthew D. Scotney-Castle, Peter I. Porshnev
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Patent number: 8900405Abstract: The disclosure concerns a process ring for the wafer support pedestal of a toroidal source plasma immersion ion implantation reactor. The process ring improves edge uniformity by providing a continuous surface extending beyond the wafer edge, in one embodiment. In another embodiment, the process ring includes a floating electrode that functions as an extension of the wafer support electrode by RF coupling at the bias frequency.Type: GrantFiled: November 14, 2007Date of Patent: December 2, 2014Assignee: Applied Materials, Inc.Inventors: Peter I. Porshnev, Majeed A. Foad, Kartik Ramaswamy, Biagio Gallo, Hiroji Hanawa, Andrew Nguyen, Kenneth S. Collins, Amir Al-Bayati
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Patent number: 8802522Abstract: Methods for forming a device on a substrate are provided herein. In some embodiments, a method of forming a device on a substrate may include providing a substrate having a partially fabricated first device disposed on the substrate, the first device including a first film stack comprising a first dielectric layer and a first high-k dielectric layer disposed atop the first dielectric layer; depositing a first metal layer atop the first film stack; and modifying a first upper surface of the first metal layer to adjust a first threshold voltage of the first device, wherein the modification of the first upper surface does not extend through to a first lower surface of the first metal layer.Type: GrantFiled: July 25, 2011Date of Patent: August 12, 2014Assignee: Applied Materials, Inc.Inventors: Michael G. Ward, Igor V. Peidous, Sunny Chiang, Yen B. Ta, Andrew Darlak, Peter I. Porshnev, Swaminathan Srinivasan
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Publication number: 20140147700Abstract: A method and apparatus for forming magnetic media substrates is provided. A patterned resist layer is formed on a substrate having a magnetically susceptible layer. A conformal protective layer is formed over the patterned resist layer to prevent degradation of the pattern during subsequent processing. The substrate is subjected to an energy treatment wherein energetic species penetrate portions of the patterned resist and conformal protective layer according to the pattern formed in the patterned resist, impacting the magnetically susceptible layer and modifying a magnetic property thereof. The patterned resist and conformal protective layers are then removed, leaving a magnetic substrate having a pattern of magnetic properties with a topography that is substantially unchanged.Type: ApplicationFiled: January 31, 2014Publication date: May 29, 2014Applicant: Applied Materials, Inc.Inventors: Christopher Dennis BENCHER, Roman GOUK, Steven VERHAVERBEKE, Li-Qun XIA, Yong-Won LEE, Matthew D. SCOTNEY-CASTLE, Martin A. HILKENE, Peter I. PORSHNEV
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Patent number: 8658242Abstract: A method and apparatus for forming magnetic media substrates is provided. A patterned resist layer is formed on a substrate having a magnetically susceptible layer. A conformal protective layer is formed over the patterned resist layer to prevent degradation of the pattern during subsequent processing. The substrate is subjected to an energy treatment wherein energetic species penetrate portions of the patterned resist and conformal protective layer according to the pattern formed in the patterned resist, impacting the magnetically susceptible layer and modifying a magnetic property thereof. The patterned resist and conformal protective layers are then removed, leaving a magnetic substrate having a pattern of magnetic properties with a topography that is substantially unchanged.Type: GrantFiled: July 28, 2011Date of Patent: February 25, 2014Assignee: Applied Materials, Inc.Inventors: Christopher D. Bencher, Roman Gouk, Steven Verhaverbeke, Li-Qun Xia, Yong-Won Lee, Matthew D. Scotney-Castle, Martin A. Hilkene, Peter I. Porshnev
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Patent number: 8586952Abstract: Embodiments of the invention provide a method of reducing thermal energy accumulation during a plasma ion implantation process for forming patterns including magnetic and non-magnetic domains on a magnetically susceptible surface on a substrate. In one embodiment, a method of controlling a substrate temperature during a plasma ion implantation process includes (a) performing a first portion of a plasma ion implantation process on a substrate having a magnetically susceptible layer formed thereon in a processing chamber for a first time period, wherein a temperature of the substrate is maintained below about 150 degrees Celsius, (b) cooling the temperature of the substrate after the first portion of the plasma ion implantation process has been completed, and (c) performing a second portion of the plasma ion implantation process on the substrate, wherein the temperature of the substrate is maintained below 150 degrees Celsius.Type: GrantFiled: October 31, 2010Date of Patent: November 19, 2013Assignee: Applied Materials, Inc.Inventors: Martin A. Hilkene, Matthew D. Scotney-Castle, Peter I. Porshnev, Roman Gouk, Steven Verhaverbeke
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Patent number: 8501605Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, a method of doping a substrate may include forming a dopant region on a substrate by implanting one or more dopant elements into the dopant region of the substrate using a plasma doping process; forming a cap layer atop the dopant region; annealing the dopant region after forming the cap layer; and removing the cap layer after annealing the dopant region.Type: GrantFiled: July 22, 2011Date of Patent: August 6, 2013Assignee: Applied Materials, Inc.Inventors: Kartik Santhanam, Martin A. Hilkene, Manoj Vellaikal, Mark R. Lee, Matthew D. Scotney-Castle, Peter I. Porshnev
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Patent number: 8492177Abstract: Methods for quantitatively measuring the performance of a plasma immersion process are provided herein. In some embodiments, a method of quantitatively measuring the performance of a plasma immersion process, using a first substrate comprising an oxide layer deposited atop a silicon layer, may include subjecting the first substrate to a plasma immersion process in a first plasma immersion chamber to form a doped oxide layer atop the first substrate; and determining a thickness of the doped oxide layer by shining a beam of light upon a reflective surface of the doped oxide layer; detecting reflected beams of light off of the reflective surface of the doped oxide layer; and analyzing the reflected beams of light to determine the thickness of the doped oxide layer on the first substrate.Type: GrantFiled: November 30, 2011Date of Patent: July 23, 2013Assignee: Applied Materials, Inc.Inventors: Daping Yao, Peter I. Porshnev, Martin A. Hilkene, Matthew D. Scotney-Castle, Manoj Vellaikal
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Publication number: 20130164455Abstract: Embodiments described herein provide methods and apparatus for treating a magnetic substrate having an imprinted, oxygen-reactive mask formed thereon by implanting ions into a magnetically active surface of the magnetic substrate through the imprinted oxygen-reactive mask, wherein the ions do not reduce the oxygen reactivity of the mask, and removing the mask by exposing the substrate to an oxygen-containing plasma. The mask may be amorphous carbon, through which carbon-containing ions are implanted into the magnetically active surface. The carbon-containing ions, which may also contain hydrogen, may be formed by activating a mixture of hydrocarbon gas and hydrogen. A ratio of the hydrogen and the hydrocarbon gas may be selected or adjusted to control the ion implantation.Type: ApplicationFiled: December 14, 2012Publication date: June 27, 2013Inventors: Martin A. Hilkene, Roman Gouk, Matthew D. Scotney-Castle, Peter I. Porshnev
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Publication number: 20130137197Abstract: Methods for quantitatively measuring the performance of a plasma immersion process are provided herein. In some embodiments, a method of quantitatively measuring the performance of a plasma immersion process, using a first substrate comprising an oxide layer deposited atop a silicon layer, may include subjecting the first substrate to a plasma immersion process in a first plasma immersion chamber to form a doped oxide layer atop the first substrate; and determining a thickness of the doped oxide layer by shining a beam of light upon a reflective surface of the doped oxide layer; detecting reflected beams of light off of the reflective surface of the doped oxide layer; and analyzing the reflected beams of light to determine the thickness of the doped oxide layer on the first substrate.Type: ApplicationFiled: November 30, 2011Publication date: May 30, 2013Applicant: APPLIED MATERIALS, INC.Inventors: DAPING YAO, PETER I. PORSHNEV, MARTIN A. HILKENE, MATTHEW D. SCOTNEY-CASTLE, MANOJ VELLAIKAL
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Publication number: 20130095643Abstract: Methods for processing a substrate are provided herein. In some embodiments, a method of processing a substrate may include implanting a dopant species into the one or more regions of the substrate using a first dopant precursor comprising a hydride of the dopant species; and implanting the dopant species into the one or more regions of the substrate using a second dopant precursor comprising fluorine and the dopant species. In some embodiments, the first and second dopant precursors may be provided simultaneously. In some embodiments, the first dopant precursor may be provided for a first time period, followed by providing the first dopant precursor and the second dopant precursor for a second period of time. In some embodiments, the flow of the first dopant precursor and the flow of the second dopant precursor may be alternated until a desired implant level is reached.Type: ApplicationFiled: October 17, 2011Publication date: April 18, 2013Applicant: APPLIED MATERIALS, INC.Inventors: KARTIK SANTHANAM, MATTHEW D. SCOTNEY-CASTLE, MANOJ VELLAIKAL, PETER I. PORSHNEV