Patents by Inventor Peter Iles

Peter Iles has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Solar cell having an integral monolithically grown bypass diode
    Patent number: 7449630
    Abstract: The present invention is directed to systems and methods for protecting a solar cell. The solar cell includes first solar cell portion. The first solar cell portion includes at least one junction and at least one solar cell contact on a backside of the first solar cell portion. At least one bypass diode portion is epitaxially grown on the first solar cell portion. The bypass diode has at least one contact. An interconnect couples the solar cell contact to the diode contact.
    Type: Grant
    Filed: April 6, 2005
    Date of Patent: November 11, 2008
    Assignee: Emcore Corporation
    Inventors: Frank Ho, Milton Y. Yeh, Chaw-Long Chu, Peter A. Iles
  • High efficiency, monolithic multijunction solar cells containing lattice-mismatched materials and methods of forming same
    Patent number: 6951819
    Abstract: In one embodiment, a method of forming a multijunction solar cell having lattice mismatched layers and lattice-matched layers comprises growing a top subcell having a first band gap over a growth semiconductor substrate. A middle subcell having a second band gap is grown over the top subcell, and a lower subcell having a third band gap is grown over the middle subcell. The lower subcell is substantially lattice-mismatched with respect to the growth semiconductor substrate. The first band gap of the top subcell is larger than the second band gap of the middle subcell. The second band gap of the middle subcell is larger than the third band gap of the lower subcell. A support substrate is formed over the lower subcell, and the growth semiconductor substrate is removed. In various embodiments, the multijunction solar cell may further comprise additional lower subcells. A parting layer may also be provided between the growth substrate and the top subcell in certain embodiments.
    Type: Grant
    Filed: December 4, 2003
    Date of Patent: October 4, 2005
    Assignee: Blue Photonics, Inc.
    Inventors: Peter A. Iles, Frank F. Ho, Yea-Chuan M. Yeh
  • Solar cell having an integral monolithically grown bypass diode
    Publication number: 20050183765
    Abstract: The present invention is directed to systems and methods for protecting a solar cell. The solar cell includes first solar cell portion. The first solar cell portion includes at least one junction and at least one solar cell contact on a backside of the first solar cell portion. At least one bypass diode portion is epitaxially grown on the first solar cell portion. The bypass diode has at least one contact. An interconnect couples the solar cell contact to the diode contact.
    Type: Application
    Filed: April 6, 2005
    Publication date: August 25, 2005
    Inventors: Frank Ho, Milton Yeh, Chaw-Long Chu, Peter Iles
  • High efficiency, monolithic multijunction solar cells containing lattice-mismatched materials and methods of forming same
    Publication number: 20040166681
    Abstract: In one embodiment, a method of forming a multijunction solar cell having lattice mismatched layers and lattice-matched layers comprises growing a top subcell having a first band gap over a growth semiconductor substrate. A middle subcell having a second band gap is grown over the top subcell, and a lower subcell having a third band gap is grown over the middle subcell. The lower subcell is substantially lattice-mismatched with respect to the growth semiconductor substrate. The first band gap of the top subcell is larger than the second band gap of the middle subcell. The second band gap of the middle subcell is larger than the third band gap of the lower subcell. A support substrate is formed over the lower subcell, and the growth semiconductor substrate is removed. In various embodiments, the multijunction solar cell may further comprise additional lower subcells. A parting layer may also be provided between the growth substrate and the top subcell in certain embodiments.
    Type: Application
    Filed: December 4, 2003
    Publication date: August 26, 2004
    Inventors: Peter A. Iles, Frank F. Ho, Yea-Chuan M. Yeh
  • Solar cell having an integral monolithically grown bypass diode
    Publication number: 20040040593
    Abstract: The present invention is directed to systems and methods for protecting a solar cell. The solar cell includes first solar cell portion. The first solar cell portion includes at least one junction and at least one solar cell contact on a backside of the first solar cell portion. At least one bypass diode portion is epitaxially grown on the first solar cell portion. The bypass diode has at least one contact. An interconnect couples the solar cell contact to the diode contact.
    Type: Application
    Filed: January 3, 2003
    Publication date: March 4, 2004
    Inventors: Frank Ho, Milton Y. Yeh, Chaw-Long Chu, Peter A. Iles
  • Solar cell having an integral monolithically grown bypass diode
    Patent number: 6600100
    Abstract: The present invention is directed to systems and methods for protecting a solar cell. The solar cell includes first solar cell portion. The first solar cell portion includes at least one junction and at least one solar cell contact on a backside of the first solar cell portion. At least one bypass diode portion is epitaxially grown on the first solar cell portion. The bypass diode has at least one contact. An interconnect couples the solar cell contact to the diode contact.
    Type: Grant
    Filed: August 21, 2001
    Date of Patent: July 29, 2003
    Assignee: Emcore Corporation
    Inventors: Frank Ho, Milton Y. Yeh, Chaw-Long Chu, Peter A. Iles
  • Solar cell having an integral monolithically grown bypass
    Publication number: 20020179141
    Abstract: The present invention is directed to systems and methods for protecting a solar cell. The solar cell includes first solar cell portion. The first solar cell portion includes at least one junction and at least one solar cell contact on a backside of the first solar cell portion. At least one bypass diode portion is epitaxially grown on the first solar cell portion. The bypass diode has at least one contact. An interconnect couples the solar cell contact to the diode contact.
    Type: Application
    Filed: August 21, 2001
    Publication date: December 5, 2002
    Inventors: Frank Ho, Milton Y. Yeh, Chaw-Long Chu, Peter A. Iles
  • Solar cell having an integral monolithically grown bypass diode
    Patent number: 6359210
    Abstract: The present invention is directed to systems and methods for protecting a solar cell. The solar cell includes first solar cell portion. The first solar cell portion includes at least one junction and at least one solar cell contact on a backside of the first solar cell portion. At least one bypass diode portion is epitaxially grown on the first solar cell portion. The bypass diode has at least one contact. An interconnect couples the solar cell contact to the diode contact.
    Type: Grant
    Filed: January 2, 2001
    Date of Patent: March 19, 2002
    Assignee: Tecstar Power System, Inc.
    Inventors: Frank Ho, Milton Y. Yeh, Chaw-Long Chu, Peter A. Iles
  • Solar cell having an integral monolithically grown bypass diode
    Publication number: 20010027805
    Abstract: The present invention is directed to systems and methods for protecting a solar cell. The solar cell includes first solar cell portion. The first solar cell portion includes at least one junction and at least one solar cell contact on a backside of the first solar cell portion. At least one bypass diode portion is epitaxially grown on the first solar cell portion. The bypass diode has at least one contact. An interconnect couples the solar cell contact to the diode contact.
    Type: Application
    Filed: January 2, 2001
    Publication date: October 11, 2001
    Inventors: Frank Ho, Milton Y. Yeh, Chaw-Long Chu, Peter A. Iles
  • Solar cell having an integral monolithically grown bypass diode
    Patent number: 6278054
    Abstract: The present invention is directed to systems and methods for protecting a solar cell. The solar cell includes first solar cell portion. The first solar cell portion includes at least one junction and at least one solar cell contact on a backside of the first solar cell portion. At least one bypass diode portion is epitaxially grown on the first solar cell portion. The bypass diode has at least one contact. An interconnect couples the solar cell contact to the diode contact.
    Type: Grant
    Filed: May 19, 1999
    Date of Patent: August 21, 2001
    Assignee: Tecstar Power Systems, Inc.
    Inventors: Frank Ho, Milton Y. Yeh, Chaw-Long Chu, Peter A. Iles