Abstract: The present invention relates generally to flip chip technology and more particularly, to a method and structure for reducing internal packaging stresses, improving adhesion properties, and reducing thermal resistance in flip chip packages by using more than one underfill material deposited in different regions of the flip chip interface. According to one embodiment, a method of forming a first underfill in an interior region of an interface such that a periphery region of the interface remains open, and forming a second underfill in the periphery region is disclosed.

Abstract: The present invention relates generally to flip chip technology and more particularly, to a method and structure for reducing internal packaging stresses, improving adhesion properties, and reducing thermal resistance in flip chip packages by using more than one underfill material deposited in different regions of the flip chip interface. According to one embodiment, a method of forming a first underfill in an interior region of an interface such that a periphery region of the interface remains open, and forming a second underfill in the periphery region is disclosed.

Abstract: The present invention relates generally to flip chip technology and more particularly, to a method and structure for reducing internal packaging stresses, improving adhesion properties, and reducing thermal resistance in flip chip packages by using more than one underfill material deposited in different regions of the flip chip interface. According to one embodiment, a method of forming a first underfill in an interior region of an interface such that a periphery region of the interface remains open, and forming a second underfill in the periphery region is disclosed.

Abstract: The present invention relates generally to flip chip technology and more particularly, to a method and structure for reducing internal packaging stresses, improving adhesion properties, and reducing thermal resistance in flip chip packages by using more than one underfill material deposited in different regions of the flip chip interface. According to one embodiment, a method of forming a first underfill in an interior region of an interface such that a periphery region of the interface remains open, and forming a second underfill in the periphery region is disclosed.

Abstract: A flip chip assembly apparatus includes at least one warpage-suppressor assembly. Each warpage-suppressor assembly can include a side heater, a deformable material pad, and an actuator assembly for moving the side heater and the deformable material pad. Each side heater provides additional heat to peripheral solder balls during bonding of two substrates, thereby facilitating the reflow of the peripheral solder balls. Each deformable material pad contacts, and presses down on, a surface of one of the two substrates under bonding. The deformable material pad(s) can prevent or minimize warpage of the contacted substrate.

Abstract: In one embodiment of the present invention, inert nano-sized particles having dimensions from 1 nm to 1,000 nm are added into a solder ball. The inert nano-sized particles may comprise metal oxides, metal nitrides, metal carbides, metal borides, etc. The inert nano-sized particles may be a single compound, or may be a metallic material having a coating of a different material. In another embodiment of the present invention, a small quantity of at least one elemental metal that forms stable high melting intermetallic compound with tin is added to a solder ball. The added at least one elemental metal forms precipitates of intermetallic compounds with tin, which are dispersed as fine particles in the solder.

Abstract: A flip chip assembly apparatus includes at least one warpage-suppressor assembly. Each warpage-suppressor assembly can include a side heater, a deformable material pad, and an actuator assembly for moving the side heater and the deformable material pad. Each side heater provides additional heat to peripheral solder balls during bonding of two substrates, thereby facilitating the reflow of the peripheral solder balls. Each deformable material pad contacts, and presses down on, a surface of one of the two substrates under bonding. The deformable material pad(s) can prevent or minimize warpage of the contacted substrate.

Abstract: A flip chip assembly apparatus includes at least one warpage-suppressor assembly. Each warpage-suppressor assembly can include a side heater, a deformable material pad, and an actuator assembly for moving the side heater and the deformable material pad. Each side heater provides additional heat to peripheral solder balls during bonding of two substrates, thereby facilitating the reflow of the peripheral solder balls. Each deformable material pad contacts, and presses down on, a surface of one of the two substrates under bonding. The deformable material pad(s) can prevent or minimize warpage of the contacted substrate.

Abstract: A flip chip assembly apparatus includes at least one warpage-suppressor assembly. Each warpage-suppressor assembly can include a side heater, a deformable material pad, and an actuator assembly for moving the side heater and the deformable material pad. Each side heater provides additional heat to peripheral solder balls during bonding of two substrates, thereby facilitating the reflow of the peripheral solder balls. Each deformable material pad contacts, and presses down on, a surface of one of the two substrates under bonding. The deformable material pad(s) can prevent or minimize warpage of the contacted substrate.

Abstract: In one embodiment of the present invention, inert nano-sized particles having dimensions from 1 nm to 1,000 nm are added into a solder ball. The inert nano-sized particles may comprise metal oxides, metal nitrides, metal carbides, metal borides, etc. The inert nano-sized particles may be a single compound, or may be a metallic material having a coating of a different material. In another embodiment of the present invention, a small quantity of at least one elemental metal that forms stable high melting intermetallic compound with tin is added to a solder ball. The added at least one elemental metal forms precipitates of intermetallic compounds with tin, which are dispersed as fine particles in the solder.

Abstract: In one embodiment of the present invention, inert nano-sized particles having dimensions from 1 nm to 1,000 nm are added into a solder ball. The inert nano-sized particles may comprise metal oxides, metal nitrides, metal carbides, metal borides, etc. The inert nano-sized particles may be a single compound, or may be a metallic material having a coating of a different material. In another embodiment of the present invention, a small quantity of at least one elemental metal that forms stable high melting intermetallic compound with tin is added to a solder ball. The added at least one elemental metal forms precipitates of intermetallic compounds with tin, which are dispersed as fine particles in the solder.

Abstract: A chip fabrication method. A provided structure includes: a transistor on a semiconductor substrate, N interconnect layers on the semiconductor substrate and the transistor (N>0), and a first dielectric layer on the N interconnect layers. The transistor is electrically coupled to the N interconnect layers. P crack stop regions and Q crack stop regions are formed on the first dielectric layer (P, Q>0). The first dielectric layer is sandwiched between the N interconnect layers and a second dielectric layer that is formed on the first dielectric layer. Each P crack stop region is completely surrounded by the first and second dielectric layers. The second dielectric layer is sandwiched between the first dielectric layer and an underfill layer that is formed on the second dielectric layer. Each Q crack stop region is completely surrounded by the first dielectric layer and the underfill layer.

Abstract: A chip fabrication method. A provided structure includes: a transistor on a semiconductor substrate, N interconnect layers on the semiconductor substrate and the transistor (N>0), and a first dielectric layer on the N interconnect layers. The transistor is electrically coupled to the N interconnect layers. P crack stop regions and Q crack stop regions are formed on the first dielectric layer (P, Q>0). The first dielectric layer is sandwiched between the N interconnect layers and a second dielectric layer that is formed on the first dielectric layer. Each P crack stop region is completely surrounded by the first and second dielectric layers. The second dielectric layer is sandwiched between the first dielectric layer and an underfill layer that is formed on the second dielectric layer. Each Q crack stop region is completely surrounded by the first dielectric layer and the underfill layer.

Abstract: In one embodiment of the present invention, inert nano-sized particles having dimensions from 1 nm to 1,000 nm are added into a solder ball. The inert nano-sized particles may comprise metal oxides, metal nitrides, metal carbides, metal borides, etc. The inert nano-sized particles may be a single compound, or may be a metallic material having a coating of a different material. In another embodiment of the present invention, a small quantity of at least one elemental metal that forms stable high melting intermetallic compound with tin is added to a solder ball. The added at least one elemental metal forms precipitates of intermetallic compounds with tin, which are dispersed as fine particles in the solder.

Abstract: A method attaches a semiconductor chip to a substrate, applies a thermal interface material to a top of the semiconductor chip, and positions a lid over the semiconductor chip typically attached to the substrate with an adhesive. The method applies a force near the distal ends of the lid or substrate to cause a center portion of the lid or substrate to bow away from the semiconductor chip and increases the central thickness of the thermal interface material prior to curing. While the center portion of the lid or substrate is bowed away from the semiconductor chip, the thermal interface material method increases the temperature of the assembly, thus curing the thermal interface material and lid adhesive.

Abstract: Structures and a method for forming the same. The structure includes a semiconductor substrate, a transistor on the semiconductor substrate, and N interconnect layers on top of the semiconductor substrate, N being a positive integer. The transistor is electrically coupled to the N interconnect layers. The structure further includes a first dielectric layer on top of the N interconnect layers and P crack stop regions on top of the first dielectric layer, P being a positive integer. The structure further includes a second dielectric layer on top of the first dielectric layer. Each crack stop region of the P crack stop regions is completely surrounded by the first dielectric layer and the second dielectric layer. The structure further includes an underfill layer on top of the second dielectric layer. The second dielectric layer is sandwiched between the first dielectric layer and the underfill layer.

Abstract: Methods, apparatus and assemblies for enhancing heat transfer in electronic components using a flexible thermal pillow. The flexible thermal pillow has a thermally conductive material sealed between top and bottom conductive layers, with the bottom layer having a flexible reservoir residing on opposing sides of a central portion of the pillow that has a gap. The pillow may have roughened internal surfaces to increase an internal surface area within the pillow for enhanced heat dissipation. In an electronic assembly, the central portion of the pillow resides between a heat sink and heat-generating component for the thermal coupling there-between. During thermal cycling, the flexible reservoir of the pillow expands to retain thermally conductive material extruded from the gap, and then contracts to force such extruded material back into the gap. An external pressure source may contact the pillow for further forcing the extruded thermally conductive material back into the gap.

Abstract: A method attaches a semiconductor chip to a substrate, applies a thermal interface material to a top of the semiconductor chip, and positions a lid over the semiconductor chip typically attached to the substrate with an adhesive. The method applies a force near the distal ends of the lid or substrate to cause a center portion of the lid or substrate to bow away from the semiconductor chip and increases the central thickness of the thermal interface material prior to curing. While the center portion of the lid or substrate is bowed away from the semiconductor chip, the thermal interface material method increases the temperature of the assembly, thus curing the thermal interface material and lid adhesive.

Abstract: Structures and a method for forming the same. The structure includes a semiconductor substrate, a transistor on the semiconductor substrate, and N interconnect layers on top of the semiconductor substrate, N being a positive integer. The transistor is electrically coupled to the N interconnect layers. The structure further includes a first dielectric layer on top of the N interconnect layers and P crack stop regions on top of the first dielectric layer, P being a positive integer. The structure further includes a second dielectric layer on top of the first dielectric layer. Each crack stop region of the P crack stop regions is completely surrounded by the first dielectric layer and the second dielectric layer. The structure further includes an underfill layer on top of the second dielectric layer. The second dielectric layer is sandwiched between the first dielectric layer and the underfill layer.

Abstract: Methods, apparatus and assemblies for enhancing heat transfer in electronic components using a flexible thermal pillow. The flexible thermal pillow has a thermally conductive material sealed between top and bottom conductive layers, with the bottom layer having a flexible reservoir residing on opposing sides of a central portion of the pillow that has a gap. The pillow may have roughened internal surfaces to increase an internal surface area within the pillow for enhanced heat dissipation. In an electronic assembly, the central portion of the pillow resides between a heat sink and heat-generating component for the thermal coupling there-between. During thermal cycling, the flexible reservoir of the pillow expands to retain thermally conductive material extruded from the gap, and then contracts to force such extruded material back into the gap. An external pressure source may contact the pillow for further forcing the extruded thermally conductive material back into the gap.