Abstract: The inductance of an inductor is increased by forming a conductive wire to have a serpentine shape that weaves through a ferromagnetic core that has a number of segments that are connected together in a serpentine shape where each segment of the ferromagnetic core also has a number of sections that are connected together in a serpentine shape.

Abstract: Methods and structures provide galvanic isolation for electrical systems using a wide oxide filled trench, and that allows power across the system divide with a transformer, and that transmits data at a high baud rate using an optical link. The system solution allows the integration of all of these elements onto a single semiconductor substrate in contrast to currently available galvanic isolation systems that require multiple individual silicon die that are connected by wire bonds and are relatively slow.

Abstract: A self-propelled robotic device moves through bodily and other passageways by inflating regions of an overlying bladder along the length of the robotic device in a sequence that imparts motion to the device. The regions of the overlying bladder are inflated by energizing a plurality of coils, which are surrounded by a ferrofluid, in a sequence. The ferrofluid responds to the magnetic field created by an energized coil by creating a bulge in the side wall of the overlying bladder.

Abstract: A lateral DMOS transistor formed on a silicon-on-insulator (SOI) structure has a higher breakdown voltage that results from a cavity that is formed in the bulk region of the SOI structure. The cavity exposes a portion of the bottom surface of the insulator layer of the SOI structure that lies directly vertically below the drift region of the DMOS transistor.

Abstract: A DMOS transistor with a lower on-state drain-to-source resistance and a higher breakdown voltage utilizes a slanted super junction drift structure that lies along the side wall of an opening with the drain region at the bottom of the opening and the source region near the top of the opening.

Abstract: A method includes forming a transistor device on a first side of a semiconductor-on-insulator structure. The semiconductor-on-insulator structure includes a substrate, a dielectric layer, and a buried layer between the substrate and the dielectric layer. The method also includes forming a conductive plug through the semiconductor-on-insulator structure. The conductive plug is in electrical connection with the transistor device. The method further includes forming a field plate on a second side of the semiconductor-on-insulator structure, where the field plate is in electrical connection with the conductive plug. The transistor device could have a breakdown voltage of at least 600V, and the field plate could extend along at least 40% of a length of the transistor device.

Abstract: An optically-controlled shunt (OCS) circuit includes a switch and a light sampler. The light sampler is coupled to the switch and is configured to sample light at a photovoltaic (PV) cell corresponding to the OCS circuit and to turn on the switch when the sampled light comprises insufficient light for the PV cell. The light sampler may also be configured to turn off the switch when the sampled light comprises sufficient light for the PV cell. The light sampler may further be configured to partially turn on the switch when the sampled light comprises adequate light for the PV cell and to turn off the switch when the sampled light comprises full light for the PV cell. The switch could include a transistor, and the light sampler could include a photodiode.

Abstract: A bonded semiconductor structure is formed in a method that first forms a female semiconductor structure with pyramid-shaped openings and a male semiconductor structure with pyramid-shaped projections, and then inserts the projections into the openings to align the male semiconductor structure to the female semiconductor structure for bonding.

Abstract: A photodetector detects the absence or presence of light by detecting a change in the inductance of a coil. The magnetic field generated when a current flows through the coil passes through an electron-hole generation region. Charged particles in the electron-hole generation region come under the influence of the magnetic field, and generate eddy currents whose magnitudes depend on whether light is absent or present. The eddy currents generate a magnetic field that opposes the magnetic field generated by current flowing through the coil.

Abstract: In an ESD clamp formed in a SOI process, voltage tolerance is increased by introducing multiple blocking junctions between the anode and cathode of the device.

Abstract: Multiple wafers that each has multiple high-precision circuits and corresponding trim control circuits are batch trimmed in a process where each wafer is formed to include openings that expose trimmable circuit elements that are internal to the circuitry of the high-precision circuits. The high-precision circuits and trim control circuits are electrically activated during the trimming phase by metal traces that run along the saw streets. The method attaches a wafer contact structure to each wafer to electrically activate the metal traces. The method places the wafers with the wafer contact structures into a solution where the exposed trimmable circuit elements are electroplated or anodized when the actual output voltage of a high-precision circuit does not match the predicted output voltage of the high-precision circuit.

Abstract: In a power device such as an NLDMOS power array comprising multiple NLDMOS devices, the gates of which are driven by a driver, self protection against overvoltage events is implemented by providing a high side pull-up avalanche diode connected to at least some of the gates of the NLDMOS devices.

Abstract: The inductance of an inductor is increased by forming a conductive wire to have a serpentine shape that weaves through a ferromagnetic core that has a number of segments that are connected together in a serpentine shape where each segment of the ferromagnetic core also has a number of sections that are connected together in a serpentine shape.

Abstract: A semiconductor capacitor with large area plates and a small footprint is formed on a semiconductor wafer by forming an opening in the wafer, depositing a first metal atoms through a first shadow mask that lies spaced apart from the wafer to form a first metal layer in the opening, a dielectric layer on the first metal layer, and a second metal atoms through a second shadow mask that lies spaced apart from the wafer to form a second metal layer on the dielectric layer.

Abstract: In a DIAC-like device that includes an n+ and a p+ region connected to the high voltage node, and an n+ and a p+ region connected to the low voltage node, at least two MOS devices are formed between the n+ and p+ region connected to the high voltage node, and the n+ and p+ region connected to the low voltage node.

Abstract: A semiconductor-based gas detector enhances the collection of gas molecules and also provides a self-contained means for removing collected gas molecules by utilizing one or more electric fields to transport the gas molecules to and away from a metallic material that has a high permeability to the gas molecules.

Abstract: A semiconductor transformer provides high frequency operation by forming the primary windings of the transformer around a section of magnetic material that has a hard axis that lies substantially parallel to the direction of the magnetic field generated by the primary windings. The core can also be formed to have a number of sections where the magnetic flux follows the hard axis through each section of the core.

Abstract: A MEMS magnetic flux switch is fabricated as a ferromagnetic core. The core includes a center cantilever that is fabricated as a free beam that can oscillate at a resonant frequency that is determined by its mechanical and material properties. The center cantilever is moved by impulses applied by an associated motion oscillator, which can be magnetic or electric actuators.

Abstract: An integrated circuit die system comprises a first integrated circuit die, a second integrated circuit die and a transformer formed on a dielectric (e.g., quartz) substrate and electrically connected between the first integrated circuit die and the second integrated circuit die to provide galvanic isolation therebetween.

Abstract: In a grid-tie inverter, the DC input is phase and pulse-width modulated to define multiple phase shifted voltage pulses with the width of each pulse being modulated according to the grid AC amplitude for the corresponding portion of the AC phase.