Abstract: This is a method for improving contact openings during the manufacture of an integrated circuit. The process of forming a contact in an integrated circuit is often carried out rapidly, with imperfect control. As a result, incomplete removal of the insulating material may occur within the contact opening. In addition, the substrate material may be damaged to some extent within the contact opening by the contact formation process. In either case, high electrical resistance within the contact may result. Photo-resist may leave residue within the contact opening, low surface dopant concentrations, and insulative layer discontinuities may cause increased electrical resistance within the contact. A sequential application of two types of aqueous etchants will smooth the contact sidewall and remove a thin layer of relatively low dopant concentration at the surface of the substrate and other debris which may remain from the contact formation process and thereby allow lower resistance contacts to be formed.

Abstract: Disclosed herein are treatments for the manufacture of earth boring drill bits having abrasive wear resistant seal surfaces. The external surface of the bearing pin is surface treated, as by carburizing, in one region and simultaneously boronized over the remaining friction bearing region in a one step operation.