Abstract: An apparatus comprises at least one vectoring engine and a cross-connect coupled to the vectoring engine. The cross-connect is to couple with each of a plurality of customer premises equipment (CPE) devices via a respective DSL loop. An interface is to receive instructions for the cross-connect to couple the vectoring engine to a nonoverlapping subset of the CPE devices via the respective DSL loops. The interface is further to receive instructions for the vectoring engine to apply vectoring to the DSL loop via which to couple one of the CPE devices to the cross-connect.

Abstract: A data analyzer operative to be located at a customer premises, causes the transmission of a probing signal into at least one telephone line. The data analyzer computes a parameter that represents a characteristic of at least one telephone line based upon at least a measured reflected probing signal.

Abstract: A system and method for collecting radiation, which may be used in a lithography illumination system. The system comprises a first surface shaped to reflect radiation in a first hemisphere of a source to illuminate in a second hemisphere of the source; and a second surface shaped to reflect radiation in the second hemisphere of the source to an output plane.

Abstract: An illumination system for an extreme ultraviolet (EUV) lithography system may include multiple sources of EUV light. The system may combine the light from the multiple sources when illuminating a mask.

Abstract: Techniques, methods, and structures disclosed in relation to extreme ultraviolet (EUV) lithography in semiconductor processing. In one exemplary implementation, a method may comprise using ion beam deposition to deposit a first multilayer stack of thin films on a substrate to planarize and smooth surface defects on the substrate. The method includes using atomic layer deposition to deposit a second multilayer stack of thin films on the first multilayer stack of thin films. The second multilayer stack of thin films may comprise an extreme ultraviolet reflective multilayer stack. The second multilayer stack of thin films may comprise fewer surface defects than the first multilayer stack of thin films. The method may further comprise processing an extreme ultraviolet mask blank to form an extreme ultraviolet reflective mask.

Abstract: An illumination system for an extreme ultraviolet (EUV) lithography system may include multiple sources of EUV light. The system may combine the light from the multiple sources when illuminating a mask.

Abstract: An illumination system for an extreme ultraviolet (EUV) lithography system may include multiple sources of EUV light. The system may combine the light from the multiple sources when illuminating a mask.

Abstract: A system and method for collecting radiation, which may be used in a lithography illumination system. The system comprises a first surface shaped to reflect radiation in a first hemisphere of a source to illuminate in a second hemisphere of the source; and a second surface shaped to reflect radiation in the second hemisphere of the source to an output plane.

Abstract: An illumination system for an extreme ultraviolet (EUV) lithography system may include multiple sources of EUV light. The system may combine the light from the multiple sources when illuminating a mask.

Abstract: Embodiments of the invention provide a beam generator to produce an atomic beam that travels across a patterned surface of a reticle. The beam may interact with particles to prevent the particles from contaminating the reticle.

Abstract: A solution for mitigating the effects of EUV substrate surface defects is disclosed. In one embodiment, a layer of polyimide material is formed upon a mask substrate surface, resulting in a substantially defect free surface adjacent to which a reflective multilayer may be positioned for EUV lithography. To reduce the possibility of polyimide outgassing and resultant added roughness to adjacently positioned layers, the layer of polyimide may be cured in a vacuum at an elevated temperature before other layers are adjacently positioned.

Abstract: A system and method for collecting radiation, which may be used in a lithography illumination system. The system comprises a first surface shaped to reflect radiation in a first hemisphere of a source to illuminate in a second hemisphere of the source; and a second surface shaped to reflect radiation in the second hemisphere of the source to an output plane.

Abstract: A solution for mitigating the effects of EUV substrate surface defects is disclosed. In one embodiment, a layer of polyimide material is formed upon a mask substrate surface, resulting in a substantially defect free surface adjacent to which a reflective multilayer may be positioned for EUV lithography. To reduce the possibility of polyimide outgassing and resultant added roughness to adjacently positioned layers, the layer of polyimide may be cured in a vacuum at an elevated temperature before other layers are adjacently positioned.

Abstract: An illumination system for an extreme ultraviolet (EUV) lithography system may include multiple sources of EUV light. The system may combine the light from the multiple sources when illuminating a mask.

Abstract: A multiplexed magnetic bubble detector is described which includes a pair of detectors each having a propagation element and an underlying detector element. In one of the detectors the detector element is at the leading edge of the propagation element and in the other the element is at the trailing edge of the propagation element. The outputs from the detector elements are coupled in a bridge circuit with dummy detector elements.

Abstract: A multiplexed magnetic bubble detector is described which includes a pair of detectors each having a propagation element and an underlying detector element. In one of the detectors the detector element is at the leading edge of the propagation element and in the other the element is at the trailing edge of the propagation element. The outputs from the detector elements are coupled in a bridge circuit with dummy detector elements.

Abstract: A magnetic bubble detector which includes chevron propagation elements and underlying thin film magnetoresistive members is described. A portion of the dummy detection member is misaligned from its overlying chevrons. This misalignment provides a bias to the detection circuitry. A negative voltage is detectable when no bubble is present and a positive potential when a bubble is present. This allows easy matching between the detector and sense amplifier.

Abstract: A process is described for removing the rounded regions in a silicon dioxide layer particularly in a layer covering conductive members. The silicon dioxide layer is subjected to ion milling. The angle of incidence of the ions striking the rounded regions is greater than the angle of incidence in other regions of the layer. This causes more of the rounded regions to be removed, thereby providing a smoother, faceted surface. The process eliminates the need to taper the edges of the conductive members as done in the prior art.

Abstract: A process for thickening the relatively thin bonding pads of a single wall magnetic domain (bubble) device is disclosed. The process is particularly suited for thickening the pads defined by a buried metal layer, such as the conductive layer often disposed between the magnet garnet layer and permalloy layer. Windows are etched through a polyimide scratch protection layer to expose underlying bonding pads. A layer of gold is formed over this protective layer and over the exposed pads. The gold layer is washed away from the protective layer. Since the gold adheres only to the bonding pads, it remains to build up the thickness of these pads.