Abstract: A process for removing carbon-containing residues from a substrate is described herein. In one aspect, there is provided a process for removing carbon-containing residue from at least a portion of a surface of a substrate comprising: providing a process gas comprising an oxygen source, a fluorine source, an and optionally additive gas wherein the molar ratio of oxygen to fluorine contained within the process gas ranges from about 1 to about 10; activating the process gas using at least one energy source to provide reactive species; and contacting the surface of the substrate with the reactive species to volatilize and remove the carbon-containing residue from the surface.

Abstract: A process for removing organic electroluminescent residues from a substrate is described herein. The process includes the steps of providing a process gas comprising a fluorine-containing gas, optionally an oxygen-containing gas, and optionally an additive gas; activating the process gas in a remote chamber using at least one energy source to provide reactive species; and contacting the surface of the substrate with the reactive species to volatilize and remove the organic electroluminescent residue from the surface.

Abstract: A thermal process for cleaning equipment surfaces of undesired silicon nitride in semiconductor processing chamber with thermally activated source of pre-diluted fluorine is disclosed in the specification. The process comprising: (a)flowing pre-diluted fluorine in an inert gas through the chamber; (b)maintaining the chamber at an elevated temperature of 230° C. to 565° C. to thermally disassociate the fluorine; (c)cleaning undesired silicon nitride from the surfaces by chemical reaction of thermally disassociated fluorine in (b) with the undesired silicon nitride to form volatile reaction products; (d)removing the volatile reaction products from the chamber.

Abstract: An on-line halogen analyzer system and method of use for semiconductor processing effluent monitoring. The system includes sampling the effluent stream into an absorption cell, and passing UV-Visible light through the effluent sample in the cell. After passing through the sample the light is collected by a photo detector for real-time wavelength-selective absorption analysis. The system provides simultaneous determination of the concentrations of multiple halogen gases (e.g. F2, Cl2, Br2, and I2) in semiconductor processing effluent streams. The invention can be used for chemical vapor deposition (CVD) chamber cleaning endpoint determination and to improve fluorine utilization efficiency in remote plasma downstream CVD chamber cleaning processes.

Abstract: An on-line halogen analyzer system and method of use for semiconductor processing effluent monitoring. The system includes sampling the effluent stream into an absorption cell, and passing UV-Visible light through the effluent sample in the cell. After passing through the sample the light is collected by a photo detector for real-time wavelength-selective absorption analysis. The system provides simultaneous determination of the concentrations of multiple halogen gases (e.g. F2, Cl2, Br2, and I2) in semiconductor processing effluent streams. The invention can be used for chemical vapor deposition (CVD) chamber cleaning endpoint determination and to improve fluorine utilization efficiency in remote plasma downstream CVD chamber cleaning processes.

Abstract: An apparatus for generating a low concentration calibration gas mixture containing percent, ppm, ppb or ppt amounts of a desired analyte from a high concentration gas mixture and a high purity diluent using a series of source gas containing vessels and a series of parallel gas or chemical conduits controlled by mass flow controllers in a purged enclosure with conduits to purge gas conduits of residual gases or corrosive gases.