Abstract: In an electronic device comprising a protective barrier layer stack comprising a first barrier layer of a first amorphous carbon modification and a second barrier layer of a second amorphous carbon modification, the protective barrier layer stack has higher densities, better adhesion, and more flexibility than a single barrier layer of comparable thickness and composition.

Abstract: A method of manufacturing a hot-cathode element which consists of a rare-earth-oxide-doped refractory metal, notably thoriated tungsten, and which also contains carbon components, first a plurality of layers of the hot-cathode element being successively deposited on a substrate member (2) by means of a CVD process, after which notably the hot-cathode element is separated from the substrate member (2). The strength required for further working of the hot-cathode element is improved in that in the course of the CVD process decarburizing intermediate treatments are performed, the hot-cathode element being carburized during an aftertreatment.

Abstract: An arrangement for producing a gas flow which is enriched with the vapor of a low-volatile material. The arrangement comprises a vessel (1) having an interior space (12) for holding a powder bed (13), which consists of a low-volatile material and an additional solid inert component. The vessel is arranged in a thermostatically controlled bath (2). A gas flow (4, 16) consisting of an inert gas flows through the arrangement, preferably in the direction of the gravitational force. The gas flow passes, in this sequence, through a thick gas inlet plate (10), the powder bed (13) and a thin gas outlet plate (14). By proper dimensioning the component parts of the arrangement and providing a low pressure in the arrangement a high mass flow of the low-volatile material with a flow constant of a long duration is achieved. The enriched gas flow is conducted, for example, to a low-pressure CVD reactor.