Patents by Inventor Peter Jesper Hanberg
Peter Jesper Hanberg has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11605758Abstract: The device according to the invention comprises a nanostructured LED with a first group of nanowires protruding from a first area of a substrate and a contacting means in a second area of the substrate. Each nanowire of the first group of nanowires comprises a p-i-n-junction and a top portion of each nanowire or at least one selection of nanowires is covered with a light-reflecting contact layer. The contacting means of the second area is in electrical contact with the bottom of the nanowires, the light-reflecting contact layer being in electrical contact with the contacting means of the second area via the p-i-n-junction. Thus when a voltage is applied between the contacting means of the second area and the light-reflecting contact layer, light is generated within the nanowire. On top of the light-reflecting contact layer, a first group of contact pads for flip-chip bonding can be provided, distributed and separated to equalize the voltage across the layer to reduce the average serial resistance.Type: GrantFiled: January 18, 2019Date of Patent: March 14, 2023Assignee: NANOSYS, INC.Inventors: Steven Konsek, Jonas Ohlsson, Yourii Martynov, Peter Jesper Hanberg
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Publication number: 20190221731Abstract: The device according to the invention comprises a nanostructured LED with a first group of nanowires protruding from a first area of a substrate and a contacting means in a second area of the substrate. Each nanowire of the first group of nanowires comprises a p-i-n-junction and a top portion of each nanowire or at least one selection of nanowires is covered with a light-reflecting contact layer. The contacting means of the second area is in electrical contact with the bottom of the nanowires, the light-reflecting contact layer being in electrical contact with the contacting means of the second area via the p-i-n-junction. Thus when a voltage is applied between the contacting means of the second area and the light-reflecting contact layer, light is generated within the nanowire. On top of the light-reflecting contact layer, a first group of contact pads for flip-chip bonding can be provided, distributed and separated to equalize the voltage across the layer to reduce the average serial resistance.Type: ApplicationFiled: January 18, 2019Publication date: July 18, 2019Inventors: Steven Konsek, Jonas Ohlsson, Yourii Martynov, Peter Jesper Hanberg
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Patent number: 10263149Abstract: The present invention relates to nanostructured light emitting diodes, LEDs. The nanostructure LED device according to the invention comprises an array of a plurality of individual nanostructured LEDs. Each of the nanostructured LEDs has an active region wherein light is produced. The nanostructured device further comprise a plurality of reflectors, each associated to one individual nanostructured LED (or a group of nanostructured LEDs. The individual reflectors has a concave surface facing the active region of the respective individual nanostructured LED or active regions of group of nanostructured LEDs.Type: GrantFiled: March 20, 2015Date of Patent: April 16, 2019Assignee: QUNANO ABInventors: Lars Ivar Samuelson, Bo Pedersen, Bjorn Jonas Ohlsson, Yourii Martynov, Steven L. Konsek, Peter Jesper Hanberg
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Patent number: 10217917Abstract: The device according to the invention comprises a nanostructured LED with a first group of nanowires protruding from a first area of a substrate and a contacting means in a second area of the substrate. Each nanowire of the first group of nanowires comprises a p-i-n-junction and a top portion of each nanowire or at least one selection of nanowires is covered with a light-reflecting contact layer. The contacting means of the second area is in electrical contact with the bottom of the nanowires, the light-reflecting contact layer being in electrical contact with the contacting means of the second area via the p-i-n-junction. Thus when a voltage is applied between the contacting means of the second area and the light-reflecting contact layer, light is generated within the nanowire. On top of the light-reflecting contact layer, a first group of contact pads for flip-chip bonding can be provided, distributed and separated to equalize the voltage across the layer to reduce the average serial resistance.Type: GrantFiled: March 10, 2017Date of Patent: February 26, 2019Assignee: GLO ABInventors: Steven Konsek, Jonas Ohlsson, Yourii Martynov, Peter Jesper Hanberg
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Publication number: 20170279017Abstract: The device according to the invention comprises a nanostructured LED with a first group of nanowires protruding from a first area of a substrate and a contacting means in a second area of the substrate. Each nanowire of the first group of nanowires comprises a p-i-n-junction and a top portion of each nanowire or at least one selection of nanowires is covered with a light-reflecting contact layer. The contacting means of the second area is in electrical contact with the bottom of the nanowires, the light-reflecting contact layer being in electrical contact with the contacting means of the second area via the p-i-n-junction. Thus when a voltage is applied between the contacting means of the second area and the light-reflecting contact layer, light is generated within the nanowire. On top of the light-reflecting contact layer, a first group of contact pads for flip-chip bonding can be provided, distributed and separated to equalize the voltage across the layer to reduce the average serial resistance.Type: ApplicationFiled: March 10, 2017Publication date: September 28, 2017Inventors: Steven Konsek, Jonas Ohlsson, Yourii Martynov, Peter Jesper Hanberg
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Patent number: 9595649Abstract: The device according to the invention comprises a nanostructured LED with a first group of nanowires protruding from a first area of a substrate and a contacting means in a second area of the substrate. Each nanowire of the first group of nanowires comprises a p-i-n-junction and a top portion of each nanowire or at least one selection of nanowires is covered with a light reflecting contact layer. The contacting means of the second area is in electrical contact with the bottom of the nanowires, the light-reflecting contact layer being in electrical contact with the contacting means of the second area via the p-i-n-junction. Thus when a voltage is applied between the contacting means of the second area and the light-reflecting contact layer, light is generated within the nanowire. On top of the light-reflecting contact layer, a first group of contact pads for flip-chip bonding can be provided, distributed and separated to equalize the voltage across the layer to reduce the average serial resistance.Type: GrantFiled: January 30, 2014Date of Patent: March 14, 2017Assignee: GLO ABInventors: Steven Konsek, Jonas Ohlsson, Yourii Martynov, Peter Jesper Hanberg
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Patent number: 9287443Abstract: A nanostructured device according to the invention comprises a first group of nanowires protruding from a substrate where each nanowire of the first group of nanowires comprises at least one pn- or p-i-n-junction. A first contact, at least partially encloses and is electrically connected to a first side of the pn- or p-i-n-junction of each nanowire in the first group of nanowires. A second contacting means comprises a second group of nanowires that protrudes from the substrate, and is arranged to provide an electrical connection to a second side of the pn- or p-i-n-junction.Type: GrantFiled: February 6, 2014Date of Patent: March 15, 2016Assignee: GLO ABInventors: Steven Louis Konsek, Yourii Martynov, Jonas Ohlsson, Peter Jesper Hanberg
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Publication number: 20140246650Abstract: A nanostructured device according to the invention comprises a first group of nanowires protruding from a substrate where each nanowire of the first group of nanowires comprises at least one pn- or p-i-n-junction. A first contact, at least partially encloses and is electrically connected to a first side of the pn- or p-i-n- junction of each nanowire in the first group of nanowires. A second contacting means comprises a second group of nanowires that protrudes from the substrate, and is arranged to provide an electrical connection to a second side of the pn- or p-i-n-junction.Type: ApplicationFiled: February 6, 2014Publication date: September 4, 2014Applicant: GLO ABInventors: Steven Louis Konsek, Yourii Martynov, Jonas Ohlsson, Peter Jesper Hanberg
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Patent number: 8664636Abstract: A nanostructured device according to the invention comprises a first group of nanowires protruding from a substrate where each nanowire of the first group of nanowires comprises at least one pn- or p-i-n-junction. A first contact, at least partially encloses and is electrically connected to a first side of the pn- or p-i-n-junction of each nanowire in the first group of nanowires. A second contacting means comprises a second group of nanowires that protrudes from the substrate, and is arranged to provide an electrical connection to a second side of the pn- or p-i-n-junction.Type: GrantFiled: December 21, 2009Date of Patent: March 4, 2014Assignee: GLO ABInventors: Steven Louis Konsek, Yourii Martynov, Jonas Ohlsson, Peter Jesper Hanberg
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Publication number: 20110240959Abstract: A nanostructured device according to the invention comprises a first group of nanowires protruding from a substrate where each nanowire of the first group of nanowires comprises at least one pn- or p-i-n-junction. A first contact, at least partially encloses and is electrically connected to a first side of the pn- or p-i-n-junction of each nanowire in the first group of nanowires. A second contacting means comprises a second group of nanowires that protrudes from the substrate, and is arranged to provide an electrical connection to a second side of the pn- or p-i-n-junction.Type: ApplicationFiled: December 21, 2009Publication date: October 6, 2011Applicant: GLO ABInventors: Steven Louis Konsek, Yourii Martynov, Jonas Ohisson, Peter Jesper Hanberg
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Publication number: 20100283064Abstract: The present invention relates to nanostructured light emitting diodes, LEDs. The nanostructured LED device according to the invention comprises an array of a plurality of individual nanostructured LEDs. Each of the nanostructured LEDs has an active region wherein light is produced. The nanostructured device further comprise a plurality of reflectors, each associated to one individual nanostructured LED (or a group of nanostructured LEDs. The individual reflectors has a concave surface facing the active region of the respective individual nanostructured LED or active regions of group of nanostructured LEDs.Type: ApplicationFiled: December 27, 2007Publication date: November 11, 2010Inventors: Lars Ivar Samuelson, Bo Pedersen, Bjorn Jonas Ohlsson, Yourii Martynov, Steven L. Konsek, Peter Jesper Hanberg
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Patent number: 7026700Abstract: Embodiments of the present invention include an apparatus, method, and system for a photodetector with a polarization state sensor.Type: GrantFiled: June 24, 2004Date of Patent: April 11, 2006Assignee: Intel CorporationInventor: Peter Jesper Hanberg