Patents by Inventor Peter K. Loewenhardt
Peter K. Loewenhardt has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7363876Abstract: A transformer-coupled plasma source using toroidal cores forms a plasma with a high-density of ions along the center axis of the torus. In one embodiment, cores of a plasma generator are stacked in a vertical alignment to enhance the directionality of the plasma and generation efficiency. In another embodiment, cores are arranged in a lateral array into a plasma generating plate that can be scaled to accommodate substrates of various sizes, including very large substrates. The symmetry of the plasma attained allows simultaneous processing of two substrates, one on either side of the plasma generator.Type: GrantFiled: January 30, 2004Date of Patent: April 29, 2008Assignee: Applied Materials, Inc.Inventors: Canfeng Lai, Michael S. Cox, Peter K. Loewenhardt, Tsutomu Tanaka, Shamouil Shamouilian
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Patent number: 7078350Abstract: A method of etching a substrate in a plasma processing system is disclosed. The substrate has a semi-conductor layer, a first barrier layer disposed above the semi-conductor layer, a low-k layer disposed above the first barrier layer, a third hard mask layer disposed above the low-k layer; a second hard mask layer disposed above the third hard mask layer, and a first hard mask layer disposed above the second hard mask layer.Type: GrantFiled: March 19, 2004Date of Patent: July 18, 2006Assignee: Lam Research CorporationInventors: Jisoo Kim, Binet Worsham, Bi-Ming Yen, Peter K. Loewenhardt
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Patent number: 6979579Abstract: In a plasma processing system, a method of inspecting a contact opening of a contact formed in a first layer of the substrate to determine whether the contact reaches a metal layer that is disposed below the first layer is shown. The method includes flowing a gas mixture into a plasma reactor of the plasma processing system, the gas mixture comprising a flow of a chlorine containing gas. The method also includes striking a plasma from the gas mixture; and exposing the contact to the plasma. The method further includes detecting whether metal chloride is present in the contact opening after the exposing.Type: GrantFiled: March 30, 2004Date of Patent: December 27, 2005Assignee: Lam Research CorporationInventors: Jisoo Kim, Sangheon Lee, Sean Kang, Binet Worsham, Bi-Ming Yen, Reza Sadjadi, Peter K. Loewenhardt
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Patent number: 6949469Abstract: In a plasma processing system, a method of minimizing the differences in an etch rate of a photo resist material in different regions of a substrate is disclosed. The method includes introducing the substrate having in sequential order thereon, an underlying layer and the photo-resist layer. The method also includes flowing the etchant gas mixture into a plasma reactor of the plasma processing system, the etchant gas mixture comprising a flow of a fluorine containing gas between about 0.1% and about 10% of the etchant gas mixture. The method further includes striking a plasma from the gas mixture; etching the photo-resist layer with the plasma; and, removing the substrate from the plasma reactor.Type: GrantFiled: December 16, 2003Date of Patent: September 27, 2005Assignee: Lam Research CorporationInventors: Yu Cheng, Helen Zhu, Vinay V. Phoray, Hanzhong Xiao, Peter K. Loewenhardt
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Publication number: 20040226511Abstract: A transformer-coupled plasma source using toroidal cores forms a plasma with a high-density of ions along the center axis of the torus. In one embodiment, cores of a plasma generator are stacked in a vertical alignment to enhance the directionality of the plasma and generation efficiency. In another embodiment, cores are arranged in a lateral array into a plasma generating plate that can be scaled to accommodate substrates of various sizes, including very large substrates. The symmetry of the plasma attained allows simultaneous processing of two substrates, one on either side of the plasma generator.Type: ApplicationFiled: January 30, 2004Publication date: November 18, 2004Applicant: Applied Materials, Inc.Inventors: Canfeng Lai, Michael S. Cox, Peter K. Loewenhardt, Tsutomu Tanaka, Shamouil Shamouilian
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Publication number: 20040226512Abstract: A transformer-coupled plasma source using toroidal cores forms a plasma with a high-density of ions along the center axis of the torus. In one embodiment, cores of a plasma generator are stacked in a vertical alignment to enhance the directionality of the plasma and generation efficiency. In another embodiment, cores are arranged in a lateral array into a plasma generating plate that can be scaled to accommodate substrates of various sizes, including very large substrates. The symmetry of the plasma attained allows simultaneous processing of two substrates, one on either side of the plasma generator.Type: ApplicationFiled: January 30, 2004Publication date: November 18, 2004Applicant: Applied Materials, Inc.Inventors: Canfeng Lai, Michael S. Cox, Peter K. Loewenhardt, Tsutomu Tanaka, Shamouil Shamouilian
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Publication number: 20040226658Abstract: A transformer-coupled plasma source using toroidal cores forms a plasma with a high-density of ions along the center axis of the torus. In one embodiment, cores of a plasma generator are stacked in a vertical alignment to enhance the directionality of the plasma and generation efficiency. In another embodiment, cores are arranged in a lateral array into a plasma generating plate that can be scaled to accommodate substrates of various sizes, including very large substrates. The symmetry of the plasma attained allows simultaneous processing of two substrates, one on either side of the plasma generator.Type: ApplicationFiled: January 30, 2004Publication date: November 18, 2004Applicant: Applied Materials, Inc.Inventors: Canfeng Lai, Michael S. Cox, Peter K. Loewenhardt, Tsutomu Tanaka, Shamouil Shamouilian
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Publication number: 20040185610Abstract: A transformer-coupled plasma source using toroidal cores forms a plasma with a high-density of ions along the center axis of the torus. In one embodiment, cores of a plasma generator are stacked in a vertical alignment to enhance the directionality of the plasma and generation efficiency. In another embodiment, cores are arranged in a lateral array into a plasma generating plate that can be scaled to accommodate substrates of various sizes, including very large substrates. The symmetry of the plasma attained allows simultaneous processing of two substrates, one on either side of the plasma generator.Type: ApplicationFiled: January 30, 2004Publication date: September 23, 2004Applicant: Applied Materials, Inc.Inventors: Canfeng Lai, Michael S. Cox, Peter K. Loewenhardt, Tsutomu Tanaka, Shamouil Shamouilian
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Publication number: 20040182517Abstract: A transformer-coupled plasma source using toroidal cores forms a plasma with a high-density of ions along the center axis of the torus. In one embodiment, cores of a plasma generator are stacked in a vertical alignment to enhance the directionality of the plasma and generation efficiency. In another embodiment, cores are arranged in a lateral array into a plasma generating plate that can be scaled to accommodate substrates of various sizes, including very large substrates. The symmetry of the plasma attained allows simultaneous processing of two substrates, one on either side of the plasma generator.Type: ApplicationFiled: January 30, 2004Publication date: September 23, 2004Applicant: Applied Materials, Inc.Inventors: Canfeng Lai, Michael S. Cox, Peter K. Loewenhardt, Tsutomu Tanaka, Shamouil Shamouilian
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Patent number: 6755150Abstract: A transformer-coupled plasma source using toroidal cores forms a plasma with a high-density of ions along the center axis of the torus. In one embodiment, cores of a plasma generator are stacked in a vertical alignment to enhance the directionality of the plasma and generation efficiency. In another embodiment, cores are arranged in a lateral array into a plasma generating plate that can be scaled to accommodate substrates of various sizes, including very large substrates. The symmetry of the plasma attained allows simultaneous processing of two substrates, one on either side of the plasma generator.Type: GrantFiled: April 20, 2001Date of Patent: June 29, 2004Assignee: Applied Materials Inc.Inventors: Canfeng Lai, Michael S. Cox, Peter K. Loewenhardt, Tsutomu Tanaka, Shamouil Shamouilian
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Patent number: 6673199Abstract: A substrate etching chamber has a substrate support, a gas supply to introduce a process gas into the chamber; an inductor antenna to sustain a plasma of the process gas in a process zone of the chamber, and an exhaust to exhaust the process gas. A magnetic field generator disposed about the chamber has first and second solenoids. A controller is adapted to control a power supply to provide a first current to the first solenoid and a second current to the second solenoid, thereby generating a magnetic field in the process zone of the chamber to controllably shape the plasma in the process zone to reduce etch rate variations across the substrate.Type: GrantFiled: March 7, 2001Date of Patent: January 6, 2004Assignee: Applied Materials, Inc.Inventors: John M. Yamartino, Peter K. Loewenhardt, Dmitry Lubomirsky, Saravjeet Singh
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Patent number: 6569775Abstract: A method of improving plasma processing of a semiconductor wafer by exposing the wafer or the plasma to photons while the wafer is being processed. One embodiment of the method comprises the steps of etching an aluminum layer and, during the etching, exposing the semiconductor wafer containing the aluminum layer to photons that photodesorb copper chloride from the surface of the layer thus improving the etch process performance.Type: GrantFiled: February 17, 2000Date of Patent: May 27, 2003Assignee: Applied Materials, Inc.Inventors: Peter K. Loewenhardt, John M. Yamartino, Hui Chen, Diana Xiaobing Ma
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Patent number: 6566272Abstract: A method for processing a semiconductor wafer with a plasma using continuous RF power for a first phase of wafer processing and with pulsed RF power for a second phase of wafer processing.Type: GrantFiled: July 23, 1999Date of Patent: May 20, 2003Assignee: Applied Materials Inc.Inventors: Alex Paterson, John M. Yamartino, Peter K. Loewenhardt, Wade Zawalski
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Publication number: 20030085205Abstract: A transformer-coupled plasma source using toroidal cores forms a plasma with a high-density of ions along the center axis of the torus. In one embodiment, cores of a plasma generator are stacked in a vertical alignment to enhance the directionality of the plasma and generation efficiency. In another embodiment, cores are arranged in a lateral array into a plasma generating plate that can be scaled to accommodate substrates of various sizes, including very large substrates. The symmetry of the plasma attained allows simultaneous processing of two substrates, one on either side of the plasma generator.Type: ApplicationFiled: April 20, 2001Publication date: May 8, 2003Applicant: Applied Materials, Inc.Inventors: Canfeng Lai, Michael S. Cox, Peter K. Loewenhardt, Tsutomu Tanaka, Shamouil Shamouilian
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Patent number: 6558564Abstract: In the present invention, electron temperature is controlled by modifying the power delivered to the plasma by inducing or enhancing natural instabilities between the plasma and the power source. As a result, no pulse modulation of the RF power or RF generator is required. The instability is enhanced until the desired reduction in electron temperature has been achieved. In accordance with the invention, there are several modes for inducing such a natural instability.Type: GrantFiled: April 5, 2000Date of Patent: May 6, 2003Assignee: Applied Materials Inc.Inventors: Peter K. Loewenhardt, Wade Zawalski
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Patent number: 6508198Abstract: In a plasma reactor for processing a semiconductor wafer having an overhead inductive coil antenna, automatic compensation for the load impedance shift that accompanies plasma ignition is achieved using fixed elements. This is accomplished by applying RF power to an intermediate tap of the coil antenna that divides the antenna into two portions, while permanently suppressing the inductance of one of the two portions to an at least nearly fixed level.Type: GrantFiled: May 11, 2000Date of Patent: January 21, 2003Assignee: Applied Materials Inc.Inventors: Daniel J. Hoffman, Peter K. Loewenhardt, Victor H. Fuentes, Qiwei Liang
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Patent number: 6503367Abstract: The invention is embodied in an RF plasma reactor for processing a semiconductor wafer, including as reactor chamber bounded by a chamber wall defining an interior region of the chamber, a gas inlet, an RF power source and an RF power applicator proximal the chamber and connected to the RF power source, and an opening in this chamber communicating with the interior region of the chamber. The invention further includes a magnet apparatus disposed adjacent said opening to resist flow of plasma ions through the opening, and the magnet apparatus comprising a first pair of magnetic poles and a second pair of magnetic poles, the first pair of magnetic poles facing the second pair of magnetic poles across the opening.Type: GrantFiled: March 9, 2000Date of Patent: January 7, 2003Assignee: Applied Materials Inc.Inventors: Peter K. Loewenhardt, Gerald Z. Yin, Philip M. Salzman
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Patent number: 6449871Abstract: A process chamber 25 for processing a semiconductor substrate, comprises a support for supporting a substrate 50. A gas distributor 90 provided for introducing process gas into the chamber 25, comprises a gas nozzle for injecting process gas at an inclined angle relative to a plane of the substrate 50, into the chamber 25. Optionally, a gas flow controller 100 controls and pulses the flow of process gas through one or more gas nozzles 140. An exhaust is used to exhaust the process gas from the chamber 25.Type: GrantFiled: September 8, 2000Date of Patent: September 17, 2002Assignee: Applied Materials Inc.Inventors: Arnold Kholodenko, Dmitry Lubomirsky, Guang-Jye Shiau, Peter K. Loewenhardt, Shamouil Shamouilian
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Patent number: 6402885Abstract: The invention is embodied in a plasma reactor including a chamber enclosure having a process gas inlet and including a ceiling, a sidewall and a workpiece support pedestal capable of supporting a workpiece at a plasma processing location facing the ceiling, the workpiece processing location and ceiling defining a process region therebetween, the pedestal being spaced from said sidewall to define a pumping annulus therebetween having inner and outer walls, to permit process gas to be evacuated therethrough from the process region. The invention further includes a pair of opposing plasma confinement magnetic poles arranged adjacent the annulus within one of the inner and outer walls of the annulus, the opposing magnetic poles being axially displaced from one another the opposite poles being oriented to provide maximum magnetic flux in a direction across the annulus and a magnetic flux at the processing location less than the magnetic flux across the annulus.Type: GrantFiled: January 31, 2001Date of Patent: June 11, 2002Assignee: Applied Materials, Inc.Inventors: Peter K. Loewenhardt, Gerald Z. Yin, Philip M. Salzman
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Patent number: 6356097Abstract: A method and apparatus for estimating voltage on a wafer located in a process chamber. A probe, embedded in a wall of the process chamber, detects voltage levels generated by a plasma within the process chamber. A relationship between the detected plasma voltage level and the wafer voltage is determined.Type: GrantFiled: July 27, 1999Date of Patent: March 12, 2002Assignee: Applied Materials, Inc.Inventors: Peter K. Loewenhardt, Arthur Sato, Valentin Todorov