Abstract: An ion shower comprises a plasma source operable to generate source gas ions within a chamber, and an extraction assembly associated with a top portion of the chamber. The extraction assembly is operable to extract ions from the top portion of the chamber. The ion shower further comprises a workpiece support structure associated with the top portion of the chamber that is operable to secure the workpiece having an implantation surface orientated facing downward toward the extraction assembly for implantation thereof. The ion shower of the present invention advantageously facilitates SIMOX processing with a high oxygen fraction, and uniform beam current for next generation processing.

Abstract: An ion shower system is disclosed and comprises a plasma source operable to generate source gas ions within a chamber. The plasma source further comprises a plurality of conductor segments and a plurality of capacitors, wherein the conductor segments are serially connected through the plurality of capacitors. The plasma source further comprises an antenna drive circuit coupled to the plurality of conductor segments that provides power to the conductor segments and capacitors at a predetermined frequency. The ion shower system also comprises a source gas inlet that provides a source gas to the chamber. The conductor segments, capacitors and antenna drive circuit cooperatively provide energy to charged particles in the chamber, thereby energizing the charged particles and generating a plasma comprising source gas ions and electrons within the chamber due to ionizing collisions between the energized charged particles and the source gas.

Abstract: The present invention is directed to a method for clamping and processing a semiconductor substrate using a semiconductor processing apparatus. According to one aspect of the present invention, a multi-polar electrostatic chuck and associated method is disclosed which provides heating or cooling of a substrate by thermal contact conduction between the electrostatic chuck and the substrate. The multi-polar electrostatic chuck includes a semiconductor platform having a plurality of protrusions that define gaps therebetween, wherein a surface roughness of the plurality of protrusions is less than 100 Angstroms. The electrostatic chuck further includes a voltage control system operable to control a voltage applied to the electrostatic chuck to thus control a contact heat transfer coefficient of the electrostatic chuck, wherein the heat transfer coefficient of the electrostatic chuck is primarily a function of a contact pressure between the substrate and the plurality of protrusions.

Abstract: The present invention is directed to a method and a system for clamping a wafer to a J-R electrostatic chuck using a single-phase square wave AC clamping voltage. The method comprises determining a single-phase square wave clamping voltage for the J-R electrostatic chuck, wherein the determination is based, at least in part, on a minimum residual clamping force associated with the wafer and the electrostatic chuck and a surface topography of a leaky dielectric layer associated therewith. The wafer is placed on the electrostatic chuck; and the determined clamping voltage is applied to the electrostatic chuck, therein electrostatically clamping the wafer to the electrostatic chuck, wherein at least the minimum residual clamping force is maintained during a polarity switch of the single-phase square wave clamping voltage.

Abstract: The present invention is directed to a method for clamping a wafer to an electrostatic chuck using a single-phase square wave AC clamping voltage. The method comprises determining a single-phase square wave clamping voltage for the electrostatic chuck, wherein the determination is based, at least in part, on an inertial response time of the wafer. The wafer is placed on the electrostatic chuck, wherein a gap between the electrostatic chuck and the wafer is defined. The determined single-phase square wave clamping voltage is then applied, wherein the wafer is generally clamped to the electrostatic chuck within a predetermined distance, while an amount of electrostatic charge is generally not allowed to accumulate, thereby enabling a fast de-clamping of the wafer.

Abstract: The present invention is directed to a semiconductor processing apparatus and a method for clamping a semiconductor substrate and controlling a heat transfer associated therewith. According to one aspect of the present invention, a multi-polar electrostatic chuck and associated method is disclosed which provides a controlled and uniform heat transfer coefficient across a surface thereof. The multi-polar electrostatic chuck comprises a semiconductor platform having a plurality of protrusions that define gaps therebetween, wherein a distance or depth of the gaps is uniform and associated with a mean free path of the cooling gas therein. The electrostatic chuck is permits a control of a backside pressure of a cooling gas within the plurality of gaps to thus control a heat transfer coefficient of the cooling gas.

Abstract: Apparatus and method for implanting ions into a workpiece surface. A concentration of ions is produced. An optical analysis of the concentration of ions is performed and recorded. The constituency of the ion concentration is determined by comparing the optical analysis data with a database of records on a storage medium wherein the optical analysis data for given concentrations of ions have been stored for subsequent access. Ions from the ion concentration are caused to impact a workpiece surface. The dose of ions implanted into the workpiece is measured. Implantation of the workpiece is stopped once an appropriate dose has been reached.

Abstract: Method and apparatus for causing ions to impact a workpiece implantation surface. A process chamber defines a chamber interior into which one or more workpieces can be inserted for ion treatment. An energy source sets up an ion plasma within the process chamber. A support positions one or more workpieces within an interior region of the process chamber so that an implantation surface of the one or more workpieces is positioned within the ion plasma. A pulse generator in electrical communication with the workpiece support applies electrical pulses for attracting ions to the support. One or more dosimetry cups including an electrically biased ion collecting surface are disposed around the workpiece support to measure implantation current. An implantation controller monitors signals from the one or more dosimetry cups to control ion implantation of the workpiece.