Abstract: A method for processing a substrate includes having a plasma-enhanced chemical vapor deposition (PECVD) chamber including sidewall gas inlets and a top gas inlet disposed on a top plate of the PECVD chamber. The method further includes receiving the substrate on a substrate holder disposed within the PECVD chamber, and flowing a precursor gas mixture into the PECVD chamber through the sidewall gas inlets at a first flow rate and the top gas inlet at a second flow rate. And the method further includes applying a source power to the top plate to form a plasma from the precursor gas mixture, and exposing the substrate to the plasma to deposit a dielectric layer over the substrate, the dielectric layer has an edge thickness at edges of the substrate and a center thickness in a center region of the substrate, the edge thickness is different from the center thickness.

Abstract: An interconnect structure including conducting layers of topological semi-metals and/or topological insulators. To increase charge carrier density in the conducting layers, a charge carrier doping layer present on at least one surface of the one or more conductive layers of topological semi-metals. The charge carrying doping layers have a charge carrier density greater than the topological semi-metals and/or topological insulators of the one or more conductive layers.

Abstract: A superconducting device includes a first layer, an intermediate layer over the first layer, and a second layer over the intermediate layer. The intermediate layer is configured to decrease strain in the first layer.

Abstract: An interconnect structure including conducting layers of topological semi-metals and/or topological insulators. To increase charge carrier density in the conducting layers, a charge carrier doping layer present on at least one surface of the one or more conductive layers of topological semi-metals. The charge carrying doping layers have a charge carrier density greater than the topological semi-metals and/or topological insulators of the one or more conductive layers.