Abstract: The invention relates to a current converter (IV), having: a plurality of functional base modules (FB), which each form a sub-half-bridge with a positive-voltage-side semiconductor switch (T1) and a negative-voltage-side semiconductor switch (T2) and which each have a plurality of external current terminals (H+, H?, P); a number of power base modules (LB2, LB3), which each have a plurality of the functional base modules (FB) and an enclosure unit (MM), wherein the enclosure unit (MM) of the respective power base modules (LB2, LB3) mechanically connects together the respective corresponding functional base modules (FB) and encloses them apart from their respective current terminals (H+, H?, P), wherein the functional base modules (FB) of the respective power base modules (LB2, LB3) are electrically insulated from one another within the respective corresponding enclosure unit (MM); a current converter power module (LM), which has the power base modules (LB2, LB3) and a plurality of current connections (GV, P

Abstract: A power half-bridge module may include: a busbar carrier with insulation embedding a first busbar with two longitudinal sections; a semiconductor carrier with a second busbar and a third busbar in a row in the longitudinal direction of the busbar carrier; a first semiconductor switch with a lower-side load-current contact area on the second busbar; and a second semiconductor switch with a lower-side load-current contact area on the third busbar. The first busbar has a contact area on the first section and a second contact area on the second section. The busbar carrier has a recess at the height of the second section and extending from one surface to another. The semiconductor carrier is arranged on the second surface of the busbar carrier so both switches protrude into the recess. The second switch has an upper-side load-current contact area electrically connected to the second contact area of the first busbar.

Abstract: A power half-bridge module may include: a busbar carrier with insulation embedding a first busbar with two longitudinal sections; a semiconductor carrier with a second busbar and a third busbar in a row in the longitudinal direction of the busbar carrier; a first semiconductor switch with a lower-side load-current contact area on the second busbar; and a second semiconductor switch with a lower-side load-current contact area on the third busbar. The first busbar has a contact area on the first section and a second contact area on the second section. The busbar carrier has a recess at the height of the second section and extending from one surface to another. The semiconductor carrier is arranged on the second surface of the busbar carrier so both switches protrude into the recess. The second switch has an upper-side load-current contact area electrically connected to the second contact area of the first busbar.