Patents by Inventor Peter L. D. Change

Peter L. D. Change has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming a transistor having gate protection and transistor formed according to the method
    Patent number: 7808058
    Abstract: A microelectronic device and a method of forming same. The method comprises: a transistor gate; a first spacer and a second spacer respectively adjacent a first side and a second side of the gate; a diffusion layer supra-adjacent the gate; contact regions super-adjacent the diffusion layer and adjacent the first spacer and the second spacer; a protective cap super-adjacent the gate and between the contact regions, the protective cap being adapted to protect the device from shorts between the gate and the contact regions.
    Type: Grant
    Filed: December 16, 2008
    Date of Patent: October 5, 2010
    Assignee: Intel Corporation
    Inventor: Peter L. D. Change
  • Method of forming a transistor having gate protection and transistor formed according to the method
    Patent number: 7544594
    Abstract: A microelectronic device and a method of forming same. The method comprises: a transistor gate; a first spacer and a second spacer respectively adjacent a first side and a second side of the gate; a diffusion layer supra-adjacent the gate; contact regions super-adjacent the diffusion layer and adjacent the first spacer and the second spacer; a protective cap super-adjacent the gate and between the contact regions, the protective cap being adapted to protect the device from shorts between the gate and the contact regions.
    Type: Grant
    Filed: June 28, 2006
    Date of Patent: June 9, 2009
    Assignee: Intel Corporation
    Inventor: Peter L. D. Change
  • Method of forming a transistor having gate protection and transistor formed according to the method
    Publication number: 20090101992
    Abstract: A microelectronic device and a method of forming same. The method comprises: a transistor gate; a first spacer and a second spacer respectively adjacent a first side and a second side of the gate; a diffusion layer supra-adjacent the gate; contact regions super-adjacent the diffusion layer and adjacent the first spacer and the second spacer; a protective cap super-adjacent the gate and between the contact regions, the protective cap being adapted to protect the device from shorts between the gate and the contact regions.
    Type: Application
    Filed: December 16, 2008
    Publication date: April 23, 2009
    Inventor: Peter L.D. Change
  • Method of forming a transistor having gate protection and transistor formed according to the method
    Publication number: 20080001236
    Abstract: A microelectronic device and a method of forming same. The method comprises: a transistor gate; a first spacer and a second spacer respectively adjacent a first side and a second side of the gate; a diffusion layer supra-adjacent the gate; contact regions super-adjacent the diffusion layer and adjacent the first spacer and the second spacer; a protective cap super-adjacent the gate and between the contact regions, the protective cap being adapted to protect the device from shorts between the gate and the contact regions.
    Type: Application
    Filed: June 28, 2006
    Publication date: January 3, 2008
    Inventor: Peter L.D. Change