Abstract: In a metal-oxide semiconductor device including first and second source/drain regions of a first conductivity type formed in a semiconductor layer of a second conductivity type proximate an upper surface of the semiconductor layer, a drift region formed in the semiconductor layer proximate the upper surface of the semiconductor layer and at least partially between the first and second source/drain regions, an insulating layer formed on at least a portion of the upper surface of the semiconductor layer, and a gate formed on the insulating layer and at least partially between the first and second source/drain regions, a method for controlling an amount of hot carrier injection degradation in the device includes the steps of: forming a shielding structure on the insulating layer above at least a portion of the drift region and substantially between the gate and the second source/drain region; and adjusting an amount of coverage of the shielding structure over an upper surface of the drift region so as to minimiz

Abstract: The present invention provides a process for manufacturing a semiconductor device that can be incorporated into an integrated circuit. The method includes, forming a first doped layer of isotopically enriched silicon over a foundational substrate, forming a second layer of an isotopically enriched semiconductor material silicon over the first doped layer, and constructing active devices on the second layer. The device includes a first doped layer of an isotopically enriched semiconductor material and a second layer of an isotopically enriched semiconductor material located over the first doped layer, and active devices located on the second layer.

Abstract: An MOS device is formed including a semiconductor layer of a first conductivity type, and first and second source/drain regions of a second conductivity type formed in the semiconductor layer proximate an upper surface of the semiconductor layer, the first and second source/drain regions being spaced apart relative to one another. A drift region is formed in the semiconductor layer proximate the upper surface of the semiconductor layer and at least partially between the first and second source/drain regions. An insulating layer is formed on at least a portion of the upper surface of the semiconductor layer and above at least a portion of the drift region. A gate is formed on the insulating layer and at least partially between the first and second source/drain regions. The MOS device further includes a shielding structure formed on the insulating layer above at least a portion of the drift region.

Abstract: The present invention is a method for adjusting different resonant frequencies of a plurality of mechanical resonators formed on a common substrate, in a case where the resonant frequencies of the resonators are a function of each resonator thickness. According to this method the resonators are each formed with an etchable top electrode layer which includes a material having different etching properties as a topmost layer for each of the resonators having different resonant frequencies. By selectively etching these etchable layers one at a time in the presence of the others, one may adjust the resonant frequencies of each of the resonators without need to mask the resonators during the etching process. Associated with this method there is a resonator structure having a top electrode structure having a topmost layer having different etching characteristics for different resonators.

Abstract: An article comprising a multi-port variable capacitor is disclosed. In one embodiment, a movable plate is suspended above at least a first and a second, fixed, electrically-isolated electrode. The first electrode is electrically connected to a bias supply, and the second electrode is electrically connected to an AC signal-carrying line. As bias is applied across the first electrode and the movable plate, an electrostatic attraction is developed therebetween that causes the movable plate to move downwardly towards the first electrode. The capacitance of the variable capacitor increases as the separation distance between the movable plate and the fixed electrodes decreases. Unlike conventional variable capacitors, in the present multi-port variable capacitors, the bias (delivered via the first electrode) and the signal (delivered via the second electrode) are electrically isolated from one another. As such, the bias (DC) and signal (AC) paths are advantageously electrically isolated.

Abstract: A micromechanical variable/tunable inductor is disclosed. The present inductor comprises at least two elements capable of supporting spatial electromagnetic coupling and means for varying a geometrical relationship thereof. Varying the geometrical relationship between such elements varies the inductance of the inductor. In some embodiments, the geometrical relationship that is varied is the spacing between the two elements. The spacing is varied by creating a differential movement between such elements. In further embodiments, the present invention comprises resonant circuits incorporating such variable inductors, and oscillators including such resonant circuits.

Abstract: An article for directing optical signals among optical waveguides is disclosed. The article comprises a plurality of mirror elements that are mechanically and electrically interconnected to form a reflective surface. The reflective surface is deformable upon application of a voltage. Optical signals delivered from a source waveguide may be directed to different destination waveguides as the reflective surface is deformed. The plurality of mirror elements is actuated by a single actuator.

Abstract: An article comprising a micro-machined, passively self-assembling inductor is disclosed. The inductor is fabricated using MEMS technology and advantageously utilizes materials compatible with CMOS such that inductor is monolithically integrable with a CMOS chip. The inductor includes passive self-assembly means by which the inductor loop is moved away from an underlying substrate, typically silicon, in the final steps of inductor assembly. Such passive self-assembly does not require separate actuation or monitoring steps.

Abstract: An article comprising a light-actuated photonic switch is disclosed. The light-actuated photonic switch advantageously includes a photogenerator that powers a micro-electromechanical systems (MEMS) switch having very low voltage requirements. The MEMS switch is operable to move a reflector into or out of a path of an optical signal travelling between two waveguides. Since the MEMS switch has such low voltage requirements, a long wave photogenerator, which generates relatively low voltages, can be used. As long wavelength light experiences relatively little attenuation in optical fiber, active lightwave circuits incorporating the present light-actuated photonic switch can have very long fiber runs to remote nodes.

Abstract: A micro-opto-electromechanical systems (MOEMS) device comprises a micro-electromechanical systems (MEMS) device and a silicon optical-bench (SiOB) device or system. The MEMS device interacts with the SiOB mechanically or electromagnetically. In one embodiment, the MEMS device is operable to provide a switching function for the SiOB device. The MEMS device comprises an actuator that is mechanically linked to an optical interruptor that prevents at least a portion of an optical signal incident thereon from propagating therethrough. In an actuated state, the actuator causes the optical interrupter to move into an optical path of an optical signal traveling through an SiOB device. The signal is at least partially reflected or absorbed such that only a portion of the signal propagates beyond the point of contact with the optical interrupter.

Abstract: A micromachined xyz stage, and microscopes utilizing such a stage, are disclosed. The xyz stage includes co-planar x- and y-drive means linked to a sample stage. Such x- and y- drive means are operable to position the sample stage in an x-y plane. The xyz stage further includes z-drive operable to moves the sample stage out of the x-y plane. The z-drive can be implemented by suspending a flat-plate electrode over the sample stage using hinged plate supports. As a voltage is applied across the plate electrode and the sample stage, an electrostatic force is generated, causing the sample stage to move towards the plate electrode. The hinged plate supports facilitate assembly of the z-drive, in addition to providing support for it in its assembled configuration. By incorporating an optical fiber, the aperture of which has be drawn down to submicron size, a near-field scanning optical microscope can be formed.

Abstract: Optical switches utilizing electrostatically-driven actuators formed from micro machined plates are disclosed. Under an applied voltage, a movable plate moves toward a fixed plate or a conductive region of an underlying support. The switches further include a mechanical linkage from the actuator to an optical device. The displacement of the movable plate generated at the actuator is transferred, via the mechanical linkage, to the optical device. The optical device, which is positioned in close proximity to optically-aligned spaced optical fibers, is movable into and out of an optical path defined by the optical cores of the optical fibers by the action of the actuator. An "in-plane" optical switch includes an actuator having two vertically-oriented electrodes, which generates a substantially horizontally-directed displacement of the movable plate and the linked optical device.

Abstract: A hinged mask and a method for its use in manufacturing MEMS device are disclosed. According to the invention, the hinged mask and a portion of the MEMS device are formed at the same time on a support. Openings are formed in the mask, the openings defining a pattern that is transferable in the form of a patterned layer. After release of the MEMS device, the hinged mask is rotated out-of-plane about 180.degree. to lie on top of the MEMS device. The hinged mask is used as a micro-sized shadow mask to deposit a patterned film of arbitrary composition on the MEMS device. Since the hinged plate is formed by the original lithography, it is aligned to the MEMS device with a high degree of accuracy.