Abstract: SiC single crystals are produced in a reaction chamber, in which there is a seed crystal for the separation of a SiC single crystal from the gas phase. The reaction chamber is connected to a storage chamber, which is at least partly filled with a supply of SiC, by a gas channel with a predetermined cross-section for conveying the SiC in the gas phase. The supply of SiC is sublimated in a heating device and a temperature gradient is adjusted in the reaction chamber. It is, thus, possible to produce SiC single crystals with any desired cross-sectional area and of high crystalline quality and single-crystal yield, because the conveyance rate of the gas molecules can be precisely adjusted.

Abstract: A method for structuring silicon carbide by photolithography and plasma etching wherein a substrate of silicon carbide is covered on a flat side with a structured silicon layer, and the plasma etching is then carried out with a gaseous mixture of a halogenated hydrocarbon and oxygen, the oxygen being present in an amount of at least 40% and preferably 70 to 95% by volume.

Abstract: A method of manufacturing a superconductor, in which an intermediate conductor product of two components of a superconductive compound to be produced is first placed on a winding core and separating means comprising a graphite fabric or a graphite foil disposed between adjacent surface parts then, the superconductive compound is formed by a heat treatment and, finally, the superconducting body so produced is unwound from the winding core for further processing, to avoid fritting together of the surface parts and, at the same time, troublesome layers on the fabricated superconductor.

Abstract: A method of manufacturing a superconductor having a superconductive intermetallic compound made of two elements and having an A-15 crystal structure in which at least one core consisting of a ductile element of the compound is surrounded with a jacket of an alloy containing a ductile carrier metal and the second element of the compound after which the jacket is then covered with a tantalum layer and that layer then covered with a sheath of metal which is electrically and thermally highly conductive and is electrically normally conducting at the operating temperature of the superconductor. The structure thus obtained is then subjected to a cross section-reducing deformation after which it is heat-treated to form the intermetallic compound.

Abstract: A method for the manufacture of a superconductor having a superconductive intermetallic compound consisting of at least two elements in which at least one core containing at least one ductile element of the compound is surrounded by a jacket of ductile matrix material, after which the structure so obtained is subjected to a cross section-reducing process and the remaining elements of the compound subsequently applied to the jacket of matrix material followed by a heat treatment performed in a manner such that the compound is formed through a reaction of the remaining elements with the core after diffusion through the matrix material. The remaining elements are applied as a sheath of an alloy containing these elements along with a carrier metal which is deposited on the jacket of the matrix material after the last cross section-reducing process step and before heat treatment for forming the compound.