Abstract: An acoustic wave resonator comprises a piezoelectric material formed of aluminum nitride (AlN) doped with calcium (Ca) to enhance performance of the acoustic wave resonator.

Abstract: An acoustic wave device comprises a piezoelectric material and a second material disposed on the piezoelectric material and having a temperature coefficient of frequency of a sign opposite a sign of a temperature coefficient of frequency of the piezoelectric material, the second material including one or more of Si1-x-yTixPyO2-zFz (x,y,z<0.1), Si1-x-yGexPyO2-zFz, Si1-x-yBxPyO2-zFz (x=y<0.04), Si1-3xZnxP2xO2-yFy, Si1-xPxO2-yFy, Si1-2yGaxPxO4, Si1-2yGay-xBxPyO4, Si1-2yGay-xBxPyO4-zFz, TiNb10O29, Si1-xTixO2-yFy, Si1-x-yTixPyO2, Si1-xBxO2-yFy, Si1-x-yBxPyO2, GeO2, GeO2-yFy, Si1-xGexO2, Si1-xGexO2-yFy, Si1-x-yGexPyO2, ZnP2O6, Si1-3xZnxP2xO2, Ge1-3xZnxP2xO2, TeOx, Si1-xTexO2+y, Ge1-xTexO2+y, Si1-3x-yGeyZnxP2xO2, Si1-xPxO2-xNx, Si—O—C, Si1-2yAlxPxO4, or BeF2.

Abstract: An acoustic wave resonator comprises a piezoelectric material formed of aluminum nitride (AlN) doped with calcium (Ca) to enhance performance of the acoustic wave resonator.

Abstract: A piezoelectric material comprises AlN doped with cations of one or more elements selected from the group consisting of: one of Sb, Ta, Nb, or Ge; Cr in combination with one or more of B, Sc, Y, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, or Yb; one of Nb and Ta in combination with one of Li, Mg, Ca, Ni, Co, and Zn; Ca in combination with one of Si, Ge, Ti, Zr, and Hf; Mg in combination with one of Si, Ge, and Ti; and one or more of Co, Sb, Ta, Nb, Si, or Ge in combination with one or more of Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, or Yb. The cations at least partially substitute for Al in the crystal structure of the piezoelectric material.

Abstract: An acoustic wave device comprises a piezoelectric material and a second material disposed on the piezoelectric material and having a temperature coefficient of frequency of a sign opposite a sign of a temperature coefficient of frequency of the piezoelectric material, the second material including one or more of Si1-x-yTixPyO2-zFz (x,y,z<0.1), Si1-x-yGexPyO2-zFz, Si1-x-yBxPyO2-zFz (x=y<0.04), Si1-3xZnxP2xO2-yFy, Si1-xPxO2-yFy, Si1-2yGaxPxO4, Si1-2yGay-xBxPyO4, Si1-2yGay-xBxPyO4-zFz, TiNb10O29, Si1-xTixO2-yFy, Si1-x-yTixPyO2, Si1-xBxO2-yFy, Si1-x-yBxPyO2, GeO2, GeO2-yFy, Si1-xGexO2, Si1-xGexO2-yFy, Si1-x-yGexPyO2, ZnP2O6, Si1-3xZnxP2xO2, Ge1-3xZnxP2xO2, TeOx, Si1-xTexO2+y, Ge1-xTexO2+y, Si1-3x-yGeyZnxP2xO2, Si1-xPxO2-xNx, Si—O—C, Si1-2yAlxPxO4, or BeF2.

Abstract: A piezoelectric material comprises AlN doped with cations of one or more elements selected from the group consisting of: one of Sb, Ta, Nb, or Ge; Cr in combination with one or more of B, Sc, Y, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, or Yb; one of Nb and Ta in combination with one of Li, Mg, Ca, Ni, Co, and Zn; Ca in combination with one of Si, Ge, Ti, Zr, and Hf; Mg in combination with one of Si, Ge, and Ti; and one or more of Co, Sb, Ta, Nb, Si, or Ge in combination with one or more of Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, or Yb. The cations at least partially substitute for Al in the crystal structure of the piezoelectric material.

Abstract: A transceiver circuit is configured to operate in a first mode of operation and a second mode of operation such that a receive signal propagates from an antenna through a first filter to a low noise amplifier while simultaneously a transmit signal propagates from a power amplifier through a second filter to the antenna when operating in the first mode. The receive signal propagates from the antenna to the low noise amplifier without being filtered while alternating with the transmit signal propagating from the power amplifier to the antenna without being filtered when operating in the second mode.

Abstract: A resonator device in which a piezoelectric material is disposed between two electrodes. At least one of the electrodes is formed of a nickel-titanium alloy having equal portions nickel and titanium.

Abstract: The present invention is directed to monolithic integrated circuits incorporating an oscillator element that are particularly suited for use in timing applications. The oscillator element includes a resonator element having a piezoelectric material disposed between a pair of electrodes. The oscillator element also includes an acoustic confinement structure that may be disposed on either side of the resonator element. The acoustic confinement element includes alternating sets of low and high acoustic impedance materials. A temperature compensation layer may be disposed between the piezoelectric material and at least one of the electrodes. The oscillator element is monolithically integrated with an integrated circuit element through an interconnection. The oscillator element and the integrated circuit element may be fabricated sequentially or concurrently.

Abstract: The present invention is directed to monolithic integrated circuits incorporating an oscillator element that is particularly suited for use in timing applications. The oscillator element includes a resonator element having a piezoelectric material disposed between a pair of electrodes. The oscillator element also includes an acoustic confinement structure that may be disposed on either side of the resonator element. The acoustic confinement element includes alternating sets of low and high acoustic impedance materials. A temperature compensation layer may be disposed between the piezoelectric material and at least one of the electrodes. The oscillator element is monolithically integrated with an integrated circuit element through an interconnection. The oscillator element and the integrated circuit element may be fabricated sequentially or concurrently.

Abstract: The present invention is directed to monolithic integrated circuits incorporating an oscillator element that is particularly suited for use in timing applications. The oscillator element includes a resonator element having a piezoelectric material disposed between a pair of electrodes. The oscillator element also includes an acoustic confinement structure that may be disposed on either side of the resonator element. The acoustic confinement element includes alternating sets of low and high acoustic impedance materials. A temperature compensation layer may be disposed between the piezoelectric material and at least one of the electrodes. The oscillator element is monolithically integrated with an integrated circuit element through an interconnection. The oscillator element and the integrated circuit element may be fabricated sequentially or concurrently.

Abstract: The present invention is directed to monolithic integrated circuits incorporating an oscillator element that is particularly suited for use in timing applications. The oscillator element includes a resonator element having a piezoelectric material disposed between a pair of electrodes. The oscillator element also includes an acoustic confinement structure that may be disposed on either side of the resonator element. The acoustic confinement element includes alternating sets of low and high acoustic impedance materials. A temperature compensation layer may be disposed between the piezoelectric material and at least one of the electrodes. The oscillator element is monolithically integrated with an integrated circuit element through an interconnection. The oscillator element and the integrated circuit element may be fabricated sequentially or concurrently.

Abstract: A method of making a microelectromechanical microwave vacuum tube device is disclosed. The device is formed by defining structural regions and sacrificial regions in a substrate. The structural regions have flexural members. The substrate is treated to remove the sacrificial regions and release the structural regions such that the structural regions are moveable by the flexural members. The structural regions include a device cathode, a device grid or both a device cathode and a device grid. The cathode comprises electron emitters. The device further includes an output structure where amplified microwave power is removed from the device. In the method, the cathode surface and the grid surface are moved to a position where they are substantially parallel to each other and substantially perpendicular to the substrate. The device further comprises an anode that is substantially parallel to the cathode surface and the grid surface.

Abstract: The present invention is directed to monolithic integrated circuits incorporating an oscillator element that is particularly suited for use in timing applications. The oscillator element includes a resonator element having a piezoelectric material disposed between a pair of electrodes. The oscillator element also includes an acoustic confinement structure that may be disposed on either side of the resonator element. The acoustic confinement element includes alternating sets of low and high acoustic impedance materials. A temperature compensation layer may be disposed between the piezoelectric material and at least one of the electrodes. The oscillator element is monolithically integrated with an integrated circuit element through an interconnection. The oscillator element and the integrated circuit element may be fabricated sequentially or concurrently.

Abstract: A microelectromechanical microwave vacuum tube device is disclosed. The device consists of a cathode formed on a substrate, the cathode comprising electron emitters. A cathode emission control grid is also attached to the device substrate. The device further includes an output structure where amplified microwave power is removed from the device. In the device, the cathode surface and the grid surface are substantially parallel to each other and substantially perpendicular to the substrate. One of either the cathode, the grid, or both the cathode and the grid, are attached to the device substrate by one or more flexural members. The device further comprises an anode that is substantially parallel to the cathode surface and the grid surface.

Abstract: The effects of electromigration have been shown to lead to damage of metal electrodes of electronic devices such as thin film resonator (TFR) devices in only a few hours, for a test input power that is within the operational range of these devices. It has been determined that this failure is sensitive to the frequency of the input power. The present invention provides a method and apparatus for determining high power reliability in electronic devices, so as to enable an accurate determination of the failure time of the electronic device, and hence projected lifetime. This determination is independent from the frequency of an input power applied to the electronic device as part of the method for testing the device. Based on the above results, a TFR device has been developed, which includes a protective or electromigration-reducing layer such as titanium being deposited atop an electrode of the device.

Abstract: Differing metallic electrodes having the same or differing thickness are formed at different locations on a support structure and/or on a single thickness film of piezoelectric material in order to form a multiple frequency resonator device having greatly separated acoustic resonance frequencies. A plurality of multiple frequency resonators can be combined to form a blank of frequency selective devices in order to handle the many different RF bands, at widely varying frequencies, that wireless communication technologies demand today.

Abstract: In the thin film resonator, a piezoelectric membrane is disposed over a substrate. A first support structure defines a space over the substrate and supports the edges of the piezoelectric membrane such that the piezoelectric membrane is disposed over this space. A further support structure is disposed within the space to the piezoelectric membrane.

Abstract: In the thin film resonator, a piezoelectric membrane is disposed over a substrate. A first support structure defines a space over the substrate and supports the edges of the piezoelectric membrane such that the piezoelectric membrane is disposed over this space. A further support structure is disposed within the space to the piezoelectric membrane.

Abstract: A method for studying vibrational modes of an electro-acoustic device includes driving the electro-acoustic device to produce at least one vibrational mode therein, collecting phase and amplitude data from the electro-acoustic device using optical interferometry, and mapping the at least one vibrational mode based upon the collected phase and amplitude data. The phase and amplitude data may be processed to provide an instantaneous three-dimensional view of the at least one vibrational mode. Furthermore, a sequence of instantaneous three-dimensional views may be constructed to form a motion picture of the at least one vibrational mode. Additionally, collecting may include raster scanning to provide phase and amplitude data across a surface of the electro-acoustic device.