Abstract: A method of fabricating a perovskite light emitting device is provided.

Abstract: A perovskite ink is provided. The perovskite ink comprises a first polar solvent. The first polar solvent has a boiling point of 150° C. or more and a melting point of 30° C. or less. The perovskite ink further comprises a first light emitting perovskite material mixed in the first polar solvent at a concentration in the range of 0.01 wt. % to 10 wt. %.

Abstract: Electronic device and associated methods with multiple well areas located on a common substrate, where each well area is defined by at least three bank structures that form the side walls of the well area. Within each well area, there are at least two electrode segments where the electrode segments are separated laterally by at least one insulating bank where the insulating bank(s) are thicker than the electrode segments. There is at least one charge transporting layer completely filling the well area in direct contact and overlying both the electrode segments and the insulating bank(s). The well areas are filled using solution methods such as inkjet. Such devices have improved uniformity across the active areas.

Abstract: A method of assembling a perovskite emissive layer is provided. The method comprises the steps of: providing a substrate; providing a bank structure disposed over the substrate, wherein the bank structure is patterned so as to define at least one sub-pixel on the substrate; providing a perovskite ink, wherein the perovskite ink comprises at least one solvent and at least one perovskite light emitting material mixed in the at least one solvent; depositing the perovskite ink into the at least one sub-pixel over the substrate using a method of inkjet printing; and vacuum drying the perovskite ink inside a vacuum drying chamber to assemble a perovskite emissive layer in the at least one sub-pixel. A perovskite emissive layer assembled using the provided method is also provided. A perovskite light emitting device comprising a perovskite emissive layer assembled using the provided method is also provided.

Abstract: A method of fabricating a perovskite light emitting device is provided.

Abstract: The present invention relates to formulations comprising at least one organic semiconductor and at least one organic solvent, characterized in that the formulation contains less than 100 ppm of phenole type impurities, to their use for the preparation of electronic devices, to methods for preparing electronic or optoelectronic devices using the formulations of the present invention, and to electronic or optoelectronic devices prepared from such methods and formulations.

Abstract: A light emitting device is provided. The device comprises a first electrode, a second electrode and at least two emissive layers. A first emissive layer of the at least two emissive layers is disposed over the first electrode. A second emissive layer of the at least two emissive layers is disposed over the first emissive layer. The first emissive layer is in contact with the second emissive layer. The second electrode is disposed over the second emissive layer. At least one emissive layer of the at least two emissive layers comprises a perovskite light emitting material. The device comprises at least one further emissive layer of the at least two emissive layers, wherein the at least one further emissive layer comprises a perovskite light emitting material, an organic light emitting material or a quantum dot light emitting material.

Abstract: A pixel arrangement for a display is provided. The pixel arrangement comprises a plurality of sub-pixels. At least one sub-pixel comprises a perovskite light emitting diode. In one embodiment, a first sub-pixel is configured to emit a first colour of light, and includes a perovskite light emitting diode. A second sub-pixel is configured to emit a second colour of light that is different from the first colour, and a third sub-pixel is configured to emit a third colour of light that is different from the first and second colour. The second sub-pixel comprises a perovskite light emitting diode, an organic light emitting diode or a quantum dot light emitting diode. The third sub-pixel comprises a perovskite light emitting diode, an organic light emitting diode or a quantum dot light emitting diode.

Abstract: The present invention relates to a method for forming an organic EL element having at least one pixel type comprising at least three different layers including a hole injection layer (HIL), a hole transport layer (HTL) and an emission layer (EML), characterized in that the HIL, the HTL and the EML of at least one pixel type are obtained by depositing inks wherein the layers are annealed after said depositing steps in a first, second and third annealing step and the difference of the annealing temperature of the first and of the second annealing step is below 35° C., preferably below 30° C., more preferably below 25° C. and the annealing temperature of the third annealing step is no more than 5° C.

Abstract: A light emitting device is provided. The device comprises a first electrode, a second electrode, at least two emissive units and at least one charge generation layer. The at least two emissive units and at least one charge generation layer are disposed between the first electrode and the second electrode. A first emissive unit of the at least two emissive units is disposed over the first electrode. A first charge generation layer of the at least one charge generation layer is disposed over the first emissive unit. A second emissive unit of the at least two emissive units is disposed over the first charge generation layer. The second electrode is disposed over the second emissive unit. At least one emissive unit of the at least two emissive units comprises a perovskite light emitting material.

Abstract: The present invention relates to formulations comprising at least one organic semiconductor and at least one organic solvent, characterized in that the formulation contains less than 100 ppm of phenole type impurities, to their use for the preparation of electronic devices, to methods for preparing electronic or optoelectronic devices using the formulations of the present invention, and to electronic or optoelectronic devices prepared from such methods and formulations.

Abstract: The present invention relates to a method for forming an organic element of an electronic device having at least two different pixel types including a first pixel type (pixel A) and a second pixel type (pixel B) wherein at least one layer of the pixel A and one layer of pixel B are deposited by applying an ink at the same time, characterized in that the ink for manufacturing a layer for the pixel A and the ink for manufacturing a layer for the pixel B which are deposited at the same time are different and the layer obtained by depositing the ink for manufacturing a layer for the pixel A and the layer obtained by depositing the ink for manufacturing a layer for the pixel B are dried thereafter, wherein the relative difference of the drying time (t1?t2/t1) of both layers being deposited at the same time and being obtained by two different inks for manufacturing a layer for the pixel A and a layer for the pixel B is at most 0.

Abstract: The present invention relates to a method for forming an organic EL element having at least one pixel type comprising at least three different layers including a hole injection layer (HIL), a hole transport layer (HTL) and an emission layer (EML), characterized in that the HIL, the HTL and the EML of at least one pixel type are obtained by depositing inks wherein the layers are annealed after said depositing steps in a first, second and third annealing step and the difference of the annealing temperature of the first and of the second annealing step is below 35° C., preferably below 30° C., more preferably below 25° C. and the annealing temperature of the third annealing step is no more than 5° C.

Abstract: The present invention relates to a method for forming an organic element of an electronic device having at least two different pixel types including a first pixel type (pixel A) and a second pixel type (pixel B) wherein at least one layer of the pixel A and one layer of pixel B are deposited by applying an ink at the same time, characterized in that the ink for manufacturing a layer for the pixel A and the ink for manufacturing a layer for the pixel B which are deposited at the same time are different and the layer obtained by depositing the ink for manufacturing a layer for the pixel A and the layer obtained by depositing the ink for manufacturing a layer for the pixel B are dried thereafter, wherein the relative difference of the drying time (t1?t2/t1) of both layers being deposited at the same time and being obtained by two different inks for manufacturing a layer for the pixel A and a layer for the pixel B is at most 0.

Abstract: Electronic device and associated methods with multiple well areas located on a common substrate, where each well area is defined by at least three bank structures that form the side walls of the well area. Within each well area, there are at least two electrode segments where the electrode segments are separated laterally by at least one insulating bank where the insulating bank(s) are thicker than the electrode segments. There is at least one charge transporting layer completely filling the well area in direct contact and overlying both the electrode segments and the insulating bank(s). The well areas are filled using solution methods such as inkjet. Such devices have improved uniformity across the active areas.

Abstract: A device that may be used as a multi-color pixel is provided. The device has a first organic light emitting device, a second organic light emitting device, a third organic light emitting device, and a fourth organic light emitting device. The device may be a pixel of a display having four sub-pixels. The first device may emit red light, the second device may emit green light, the third device may emit light blue light and the fourth device may emit deep blue light.

Abstract: A device that may be used as a multi-color pixel is provided. The device has a first organic light emitting device, a second organic light emitting device, a third organic light emitting device, and a fourth organic light emitting device. The device may be a pixel of a display having four sub-pixels. The first device may emit red light, the second device may emit green light, the third device may emit light blue light and the fourth device may emit deep blue light.

Abstract: A first device that may include a short tolerant structure, and methods for fabricating embodiments of the first device, are provided. A first device may include a substrate and a plurality of OLED circuit elements disposed on the substrate. Each OLED circuit element may include a fuse that is adapted to open an electrical connection in response to an electrical short in the pixel. Each OLED circuit element may comprise a pixel that may include a first electrode, a second electrode, and an organic electroluminescent (EL) material disposed between the first and the second electrodes. Each of the OLED circuit elements may not be electrically connected in series with any other of the OLED circuit elements.

Abstract: A method of manufacturing an electroluminescent device including at least one region that is operable to emit light when excited by an electric signal being applied thereto is provided. Layers of electrode material and light-emitting material are deposited to form a multi-layer structure. During deposition, one or more of the layers are at least partially dried or cured before adding a subsequent layer. Once the multi-layer structure is formed, heat is applied to the multi-layer structure to soften one or more of its layers. Thereafter, an optionally non-planar molding surface is applied to the softened multi-layer structure to form at least one region with substantial two-dimensional curvature. At least one light-emitting layer within said region is operable to emit light in a spatially continuous manner with substantially uniform luminance and chromaticity across said region.

Abstract: A first device that may include a short tolerant structure, and methods for fabricating embodiments of the first device, are provided. A first device may include a substrate and a plurality of OLED circuit elements disposed on the substrate. Each OLED circuit element may include a fuse that is adapted to open an electrical connection in response to an electrical short in the pixel. Each OLED circuit element may comprise a pixel that may include a first electrode, a second electrode, and an organic electroluminescent (EL) material disposed between the first and the second electrodes. Each of the OLED circuit elements may not be electrically connected in series with any other of the OLED circuit elements.