Patents by Inventor Peter M. Fryer
Peter M. Fryer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7037769Abstract: The present invention is directed to a thin film transistor (and related multilayer structures) that includes: source and drain electrodes 14 and 15 disposed at a specified interval above an insulating substrate 11 and formed by printing-and-plating; an a-Si film 16 disposed for the source and drain electrodes 14 and 15; a gate insulating film 17 laminated on the a-Si film 16; and a gate electrode 18 laminated on the gate insulating film 17 and formed by printing-and-plating. The a-Si film 16 and the gate insulating film 17 have an offset region 20 that uniformly extends beyond the dimensions of the gate electrode 18.Type: GrantFiled: July 14, 2004Date of Patent: May 2, 2006Assignee: International Business Machines CorporationInventors: Peter M. Fryer, Robert L. Wisnieff, Takatoshi Tsujimura
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Patent number: 6890599Abstract: New etch barriers of indium-tin-oxide in the manufacturing process of thin film transistor-liquid crystal display are self-assembled monolayers, such as n-alkylsilanes. A typical process of applying a self-assembled monolayer is to ink a hydrolyzed n-octadecyltrimethoxysilane solution on to a stamp and then to transfer the solution onto ITO. The surface of the stamp may be polar enough to be wet with polar self-assembled monolayer solutions of an akylsilane. A non-polar stamp surface may be treated with oxygen plasma to obtain a wettable polar surface.Type: GrantFiled: June 13, 2003Date of Patent: May 10, 2005Assignee: Intellectual Business Machines CorporationInventors: Stephen L. Buchwalter, Gareth Geoffrey Hougham, Kang-Wook Lee, John J. Ritsko, Mary Elizabeth Rothwell, Peter M. Fryer
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Method of forming patterned nickel and doped nickel films via microcontact printing and uses thereof
Patent number: 6866791Abstract: The process of derivatization and patterning of surfaces, and more particularly to the formation of self-assembled molecular monolayers on metal oxide surfaces using microcontact printing and the derivative articles produced thereby.Type: GrantFiled: May 2, 2000Date of Patent: March 15, 2005Assignee: International Business Machines CorporationInventors: Tricia L. Breen, Peter M. Fryer, Robert L. Wisnieff, John Christopher Flake -
Patent number: 6791144Abstract: The present invention is directed to a thin film transistor (and related multilayer structures) that includes: source and drain electrodes 14 and 15 disposed at a specified interval above an insulating substrate 11 and formed by printing-and-plating; an a-Si-film 16 disposed for the source and drain electrodes 14 and 15; a gate insulating film 17 laminated on the a-Si film 16; and a gate electrode 18 laminated on the gate insulating film 17 and formed by printing-and-plating. The a-Si film 16 and the gate insulating film 17 have an offset region 20 that uniformly extends beyond the dimensions of the gate electrode 18.Type: GrantFiled: June 27, 2000Date of Patent: September 14, 2004Assignee: International Business Machines CorporationInventors: Peter M. Fryer, Robert L. Wisnieff, Takatoshi Tsujimura
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Patent number: 6731064Abstract: An active matrix organic light-emitting diode comprising an organic light-emitting diode portion. The organic light-emitting diode portion comprising: an underlayer having a top surface and bottom surface; a first electrode layer which is deposited and patterned on the top surface of the underlayer such that at least a portion of the underlayer is exposed, wherein the deposited first electrode layer comprises a top surface, a bottom surface and sidewalls disposed between the top and bottom surfaces, the sidewalls are positioned adjacent to the exposed portion of the underlayer; a passivation layer deposited on the exposed portion of the underlayer and the peripheral regions of the first electrode layer such that the passivation layer covers the sidewalls and the peripheral regions of the first electrode layer; a transparent conductor layer deposited on the passivation layer and the non-peripheral regions of the first electrode layer; and a second electrode layer deposited on the transparent conductor layer.Type: GrantFiled: October 4, 2002Date of Patent: May 4, 2004Assignee: International Business Machines CorporationInventors: Paul S Andry, Peter M Fryer, Frank R Libsch
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Publication number: 20030211341Abstract: New etch barriers of indium-tin-oxide in the manufacturing process of thin film transistor-liquid crystal display are self-assembled monolayers, such as n-alkylsilanes. A typical process of applying a self-assembled monolayer is to ink a hydrolyzed n-octadecyltrimethoxysilane solution on to a stamp and then to transfer the solution onto ITO. The surface of the stamp may be polar enough to be wet with polar self-assembled monolayer solutions of an akylsilane. A non-polar stamp surface may be treated with oxygen plasma to obtain a wettable polar surface.Type: ApplicationFiled: June 13, 2003Publication date: November 13, 2003Inventors: Stephen L. Buchwalter, Gareth Geoffrey Hougham, Kang-Wook Lee, John J. Ritsko, Mary Elizabeth Rothwell, Peter M. Fryer
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Patent number: 6632536Abstract: New etch barriers of indium-tin-oxide in the manufacturing process of thin film transistor-liquid crystal display are self-assembled monolayers, such as n-alkylsilanes. A typical process of applying a self-assembled monolayer is to ink a hydrolyzed n-octadecyltrimethoxysilane solution on to a stamp and then to transfer the solution onto ITO. The surface of the stamp may be polar enough to be wet with polar self-assembled monolayer solutions of an akylsilane. A non-polar stamp surface may be treated with oxygen plasma to obtain a wettable polar surface.Type: GrantFiled: December 28, 2000Date of Patent: October 14, 2003Assignee: International Business Machines CorporationInventors: Stephen L. Buchwalter, Gareth Geoffrey Hougham, Kang-Wook Lee, John J. Ritsko, Mary Elizabeth Rothwell, Peter M. Fryer
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Publication number: 20030094894Abstract: An active matrix organic light-emitting diode comprising an organic light-emitting diode portion. The organic light-emitting diode portion comprising: an underlayer having a top surface and bottom surface; a first electrode layer which is deposited and patterned on the top surface of the underlayer such that at least a portion of the underlayer is exposed, wherein the deposited first electrode layer comprises a top surface, a bottom surface and sidewalls disposed between the top and bottom surfaces, the sidewalls are positioned adjacent to the exposed portion of the underlayer; a passivation layer deposited on the exposed portion of the underlayer and the peripheral regions of the first electrode layer such that the passivation layer covers the sidewalls and the peripheral regions of the first electrode layer; a transparent conductor layer deposited on the passivation layer and the non-peripheral regions of the first electrode layer; and a second electrode layer deposited on the transparent conductor layer.Type: ApplicationFiled: October 4, 2002Publication date: May 22, 2003Applicant: International Business Machines CorporationInventors: Paul S. Andry, Peter M. Fryer, Frank R. Libsch
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Patent number: 6545295Abstract: A thin film transistor and a liquid crystal display panel are provided. These devices include a layer of ammonia-free silicon nitride formed between the gate and the gate insulator of the device.Type: GrantFiled: May 2, 2002Date of Patent: April 8, 2003Assignee: International Business Machines CorporationInventors: John Batey, Peter M. Fryer, Jun Hyung Souk
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Publication number: 20020168878Abstract: A thin film transistor and a liquid crystal display panel are provided. These devices include a layer of ammonia-free silicon nitride formed between the gate and the gate insulator of the device.Type: ApplicationFiled: May 2, 2002Publication date: November 14, 2002Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: John Batey, Peter M. Fryer, Jun Hyung Souk
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Patent number: 6420282Abstract: A method for passivating copper, aluminum, or other refractory metal films using ammonia-free silicon nitride and structures produced by the method. A thin film transistor for use in a liquid crystal display and a method of constructing the same, wherein the transistor has a gate, a source and a drain, and a gate insulator between the gate and an active silicon layer. The improvement is a layer of the ammonia-free silicon nitride deposited between the copper,aluminum, or other refractory metal gate and the gate insulator. Further,. the gate is copper, aluminum, or another refractory metal and is deposited directly on the substrate. The layer of ammonia-free silicon nitride is also deposited on portions of the substrate adjacent the gate and the gate line extending therefrom. The layer is made in a plasma-enhanced chemical vapor deposition process wherein the gas mixture comprises one part silane to 135 parts nitrogen to 100 parts helium and 100 parts hydrogen.Type: GrantFiled: September 8, 2000Date of Patent: July 16, 2002Assignee: International Business Machines CorporationInventors: John Batey, Peter M. Fryer, Jun Hyung Souk
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Publication number: 20020084252Abstract: New etch barriers of indium-tin-oxide in the manufacturing process of thin film transistor-liquid crystal display are self-assembled monolayers, such as n-alkylsilanes. A typical process of applying a self-assembled monolayer is to ink a hydrolyzed n-octadecyltrimethoxysilane solution on to a stamp and then to transfer the solution onto ITO. The surface of the stamp may be polar enough to be wet with polar self-assembled monolayer solutions of an akylsilane. A non-polar stamp surface may be treated with oxygen plasma to obtain a wettable polar surface.Type: ApplicationFiled: December 28, 2000Publication date: July 4, 2002Inventors: Stephen L. Buchwalter, Gareth Geoffrey Hougham, Kang-Wook Lee, John J. Ritsko, Mary Elizabeth Rothwell, Peter M. Fryer
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Patent number: 6380101Abstract: Microcontact printing to pattern a self-assembled monolayer (SAM) of an alkanephosphonic acid on a film of indium zinc oxide (IZO). The SAM is robust enough to protect the undelying IZO from wet chemical etching, and thus defines a pattern of IZO on the substrate. In the microcontact printing process, a patterned, elastomeric stamp is inked with a solution of octadecylphosphonic acid and brought into conformal contact with the IZO surface. A SAM of alkanesulfonic acid forms where the stamp and the surface make contact; the rest remains underivatized. The stamp is then removed from the surface. Etching the sample in aqueous oxalic acid removes the unprotected areas, while the areas protected by the SAM remain in place.Type: GrantFiled: April 18, 2000Date of Patent: April 30, 2002Assignee: International Business Machines CorporationInventors: Tricia L. Breen, Peter M. Fryer, Ronald Wayne Nunes, Mary Elizabeth Rothwell
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Patent number: 6165917Abstract: A method for passivating copper, aluminum, or other refractory metal films using ammonia-free silicon nitride and structures produced by the method. A thin film transistor for use in a liquid crystal display and a method of constructing the same, wherein the transistor has a gate, a source and a drain, and a gate insulator between the gate and an active silicon layer. The improvement is a layer of the ammonia-free silicon nitride deposited between the copper, aluminum, or other refractory metal gate and the gate insulator. Further, the gate is copper, aluminum, or another refractory metal and is deposited directly on the substrate. The layer of ammonia-free silicon nitride is also deposited on portions of the substrate adjacent the gate and the gate line extending therefrom. The layer is made in a plasma-enhanced chemical vapor deposition process wherein the gas mixture comprises one part silane to 135 parts nitrogen to 100 parts helium and 100 parts hydrogen.Type: GrantFiled: June 18, 1997Date of Patent: December 26, 2000Assignee: International Business Machines CorporationInventors: John Batey, Peter M. Fryer, Jun Hyung Souk
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Patent number: 5912506Abstract: A multi-layer metal sandwich structure with taper and reduced etch bias formed on a substrate includes a first metal layer formed on the substrate and a second metal layer formed on the first metal layer. The width of the first metal layer is greater than the width of the second metal layer at the interface of the first metal layer and the second metal layer. The second metal layer has tapered side walls. The taper angle between each side wall and the intersection of the first and second metal layers is between 5.degree. and 90.degree.. The multi-layer metal sandwich may also include a third metal layer formed on the second metal layer.Type: GrantFiled: September 20, 1997Date of Patent: June 15, 1999Assignee: International Business Machines CorporationInventors: Evan G. Colgan, Peter M. Fryer, James McKell Edwin Harper, Kenneth P. Rodbell
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Patent number: 5831283Abstract: A layer for passivating copper, aluminum, or other refractory metal films using ammonia-free silicon nitride and structures produced by the method. A thin film transistor for use in a liquid crystal display, wherein the transistor has a gate, a source and a drain, and a gate insulator between the gate and an active silicon layer. The improvement is a layer of the ammonia-free silicon nitride deposited between the copper, aluminum, or other refractory metal gate and the gate insulator. Further, the gate is copper, aluminum, or another refractory metal and is deposited directly on the substrate. The layer of ammonia-free silicon nitride is also deposited on portions of the substrate adjacent the gate and the gate line extending therefrom. The structure provides stable and low-resistance electrical contact between copper, aluminum, or another refractory metal gate lines and a metallization layer of aluminum and/or molybdenum, includes using a conductive material, such as an indium tin oxide bridge.Type: GrantFiled: April 22, 1996Date of Patent: November 3, 1998Assignee: International Business Machines CorporationInventors: John Batey, Peter M. Fryer, Jun Hyung Souk
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Patent number: 5281485Abstract: The present invention relates generally to a structure and a method of making Alpha-Ta films, and more particularly, to a structure and a method of making Alpha-Ta in thin films. A seed layer of Ta reactively sputtered in a nitrogen containing environment is grown on the substrate, and using this seed layer of Ta(N) layers of Alpha-Ta are then formed.Type: GrantFiled: January 15, 1993Date of Patent: January 25, 1994Assignee: International Business Machines CorporationInventors: Evan G. Colgan, Peter M. Fryer
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Patent number: 5221449Abstract: The present invention relates generally to a structure and a method of making Alpha-Ta films, and more particularly, to a structure and a method of making Alpha-Ta in thin films. A seed layer of Ta reactively sputtered in a nitrogen containing environment is grown on the substrate, and using this seed layer of Ta(N) layers of Alpha-Ta are then formed.Type: GrantFiled: July 9, 1992Date of Patent: June 22, 1993Assignee: International Business Machines CorporationInventors: Evan G. Colgan, Peter M. Fryer