Abstract: A single or multi stage liquid loop thermoelectric heat pump system for cooling and/or heating is disclosed that can achieve higher delta temperature and COP then previous thermoelectric heat pump systems.

Abstract: A cooling and heating system for seats and other user items utilizes a thermally conductive sheet with one or more thermoelectric devices. This thermally conductive sheet has high thermal conductivity and is flexible, and may comprise polyimide, graphite, PGS graphite, carbon fiber, or more advanced materials such as graphene or carbon nanotubes or other high thermal conductivity material such as copper or aluminum sheet or mesh. The thermally conductive flexible sheet with remote thermoelectric device provides good temperature uniformity across the seat, quick response time, and excellent performance in extreme ambient temperatures. The high thermal conductivity sheet can be placed in the seat area between the upholstery and seat cushion with thermoelectric devices thermally connected to the thermally conductive sheet away from the occupant seating area to provide comfortable and durable seating with thermal comfort control.

Abstract: Disclosed is a method of making a semiconductor device that exemplarily comprises depositing a Ti/Pt layer onto a AuBe intermediate layer on a p-doped region of a semiconductor body. It also comprises depositing a Ti/Pt layer onto a n-doped region of the semiconductor body, or onto a AuGe intermediate layer on the n-doped region, followed by rapid thermal processing. Exemplarily, the device is a semiconductor laser, the n-doped region is InP, the p-doped region is InGaAs or InGaAsP, and RTP involves heating in the range 425.degree.-500.degree. C. for 10-100 seconds. The method comprises fewer processing steps than typical prior art methods, reduces the danger of fabrication error and of wafer breakage and, significantly, results in contacts that can be relatively thermally stable and can have very low specific contact resistance (exemplarily as low as 10.sup.-7 .OMEGA..multidot.cm.sup.2).

Abstract: The inventive method of producing a device having non-alloyed ohmic contacts of common composition to both an n-doped and a p-doped region of a semiconductor body comprises deposition of a Ti/Pt layer on the p-doped as well as the n-doped region, followed by rapid thermal processing (RTP). Exemplarily, the device is a semiconductor laser, the n-doped region is InP, the p-doped region is InGaAs or InGaAsP, and RTP involves heating in the range 425.degree.-475.degree. C. for 10-100 seconds. The method comprises fewer processing steps than typical prior art methods, reduces the danger of fabrication error and of wafer breakage and, significantly, results in contacts that can be relatively thermally stable and can have very low specific contact resistance (exemplarily as low as 10.sup.-7 .OMEGA..multidot.cm.sup.2).