Abstract: A doped silicon layer is formed in a batch process chamber at low temperatures. The silicon precursor for the silicon layer formation is a polysilane, such as trisilane, and the dopant precursor is an n-type dopant, such as phosphine. The silicon precursor can be flowed into the process chamber with the flow of the dopant precursor or separately from the flow of the dopant precursor. Surprisingly, deposition rate is independent of dopant precursor flow, while dopant incorporation linearly increases with the dopant precursor flow.

Abstract: A vertical chemical vapor deposition (CVD) apparatus and methods for the deposition of compound films, such as silicon germanium films, are provided. In a preferred embodiment, the apparatus comprises a process chamber, wherein the process chamber is elongated in a first generally vertical direction; a boat to support a plurality of wafers, wherein individual wafers comprising the plurality of wafers are oriented substantially horizontally, stacked substantially vertically and spaced apart vertically; and a gas injector inside the process chamber, wherein the gas injector extends in a second generally vertical direction over about the height of the boat and comprises a plurality of gas injection holes, wherein the plurality of gas injection holes extends over about the height of the gas injector, and wherein the gas injector has a feed end connected to a source of a silicon-containing gas and a source of a germanium-containing gas.