Abstract: A method of selective deposition that includes disposing in a deposition chamber a patterned substrate of side-by-side areas of metal and dielectric. The deposition chamber is connected to a bubbler that contains an N-heterocyclic carbenes (NHC) precursor. By heating the bubbler, gaseous free NHC is generated which is pulsed into the deposition chamber, where the NHC selectively chemisorbs onto the metal surface. Annealing after deposition of NHC improves surface patterning by removing stray metal from the dielectric section.