Patents by Inventor Peter McElheny

Peter McElheny has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • POLYSILICON GATE DOPING LEVEL VARIATION FOR REDUCED LEAKAGE CURRENT
    Publication number: 20040097043
    Abstract: A method of fabricating transistors on a semiconductor substrate is disclosed according to a first embodiment of the present invention. Gate dielectrics of equal thickness are provided to a first and second transistor on the semiconductor substrate. A polysilicon doping level of the first transistor is varied with a polysilicon doping level of the second transistor.
    Type: Application
    Filed: May 28, 2002
    Publication date: May 20, 2004
    Inventors: Peter McElheny, Priya Selvaraj, Bill Liu, Francois Gregoire