Abstract: In one embodiment, a method for forming a semiconductor device includes forming trench and a dielectric layer along surfaces of the trench. A shield electrode is formed in a lower portion of the trench and the dielectric layer is removed from upper sidewall surfaces of the trench. A gate dielectric layer is formed along the upper surfaces of the trench. Oxidation-resistant spacers are formed along the gate dielectric layer. Thereafter, an interpoly dielectric layer is formed above the shield electrode using localized oxidation. The oxidation step increases the thickness of lower portions of the gate dielectric layer. The oxidation-resistant spacers are removed before forming a gate electrode adjacent the gate dielectric layer.

Abstract: The invention provides a breath testing device which includes a visual indicating agent which changes color in the presence of an odor associated with bad breath, such as sulfur and ammonia odors. An example of the visual indicating agent is 4,4?-bis(dimethylamino)-benzhydrol (Michler's hydrol or BDMB) and related dyes having a similar chemical structure. The indicating agent is applied to a substrate which is then inserted into a tube or straw, or which covers one end of a straw. When a user with bad breath blows into the tube or straw, the indicating agent will change color. The breath testing devices provide a quick and affordable means for a user to test their breath, and they may be packaged in discreet, pocket-sized dispensers which can be carried in a pocket or purse.

Abstract: A process used during manufacture of printed circuit boards comprises protecting metal pads and/or through-holes to provide a tarnish-resistant and solderable coating. In the method, the pads and/or through-holes are bright-etched, metal plated, preferably by an immersion process, and treated with a tarnish inhibitor. The tarnish inhibitor may be incorporated into the immersion plating bath. The metal plating is usually with silver or bismuth and the pads and/or through-holes comprise copper.

Abstract: A method for rapidly detecting the presence of formaldehyde in a urine sample (e.g., urine or a urinary material associated therewith, such as headspace gas located associated with urine) is provided. The method includes contacting the urine sample with a substrate on which is disposed a colorant that is capable of undergoing a detectable color change in the presence of formaldehyde. Without intending to be limited by theory, it is believed that oxidation of the colorant by formaldehyde induces either a shift of the absorption maxima towards the red end of the spectrum (“bathochromic shift”) or towards the blue end of the spectrum (“hypsochromic shift”). The absorption shift provides a color difference that is detectable, either visually or through instrumentation, to indicate the presence of formaldehyde within the urine sample. For example, prior to contact with a urine sample, the colorant may be colorless or it may possess a certain color.

Abstract: A wound or surgical dressing is disclosed. The wound or surgical dressing is configured to cover or surround a wound, a surgical incision, or any type of skin irritation. In accordance with the present disclosure, the wound or surgical dressing is treated with a bacteriostatic composition that is capable of binding and trapping negatively charged matter, such as bacteria, pathogens, and the like. The bacteriostatic composition comprises a cationic polymer, a cationic oligomer, or particles coated with a cationic material. The bacteriostatic composition is bonded to the wound or surgical dressing in a manner such that the bacteriostatic composition is not substantially transferred to a patient being treated.

Abstract: A borescope is received within a housing. The borescope includes a flexible end portion carrying the video head and a housing includes a flexible end portion comprised of ball-socket segments and a tip for following the movement of the flexible end portion of the borescope. Cooling air is provided in an annular passage between the borescope and housing for flow about the borescope to maintain the video head temperature below its temperature limitation. Two cables maintain the ball-socket segments and tip in contact with a transition piece and with one another to enable the flexible borescope end portion to follow the movement of the directionally controlled video head.

Abstract: The invention provides a breath testing device which includes a visual indicating agent which changes color in the presence of an odor associated with bad breath, such as sulfur and ammonia odors. An example of the visual indicating agent is 4,4?-bis(dimethylamino)-benzhydrol (Michler's hydrol or BDMB) and related dyes having a similar chemical structure. The indicating agent is applied to a substrate which is then inserted into a tube or straw, or which covers one end of a straw. When a user with bad breath blows into the tube or straw, the indicating agent will change color. The breath testing devices provide a quick and affordable means for a user to test their breath, and they may be packaged in discreet, pocket-sized dispensers which can be carried in a pocket or purse.

Abstract: A method for rapidly detecting the presence of formaldehyde in a urine sample (e.g., urine or a urinary material associated therewith, such as headspace gas located associated with urine) is provided. The method includes contacting the urine sample with a substrate on which is disposed a colorant that is capable of undergoing a detectable color change in the presence of formaldehyde. Without intending to be limited by theory, it is believed that oxidation of the colorant by formaldehyde induces either a shift of the absorption maxima towards the red end of the spectrum (“bathochromic shift”) or towards the blue end of the spectrum (“hypsochromic shift”). The absorption shift provides a color difference that is detectable, either visually or through instrumentation, to indicate the presence of formaldehyde within the urine sample. For example, prior to contact with a urine sample, the colorant may be colorless or it may possess a certain color.

Abstract: A method for patterning CNTs on a wafer wherein a CNT layer is provided on a substrate, a hard mask film is deposited on the CNT layer, a BARC layer (optional) is coated on the hard mask film, and a resist is patterned on the BARC layer (or directly on the hard mask film if the BARC layer is not included). Then, the resist pattern is effectively transferred to the hard mask film by etching the BARC layer (if provided) and etching partly into, but not entirely through, the hard mask film (i.e., etching is stopped before reaching the CNT layer) Then, the resist and the BARC layer (if provided) is stripped, and the hard mask pattern is effectively transferred to the CNTs by etching away (preferably by using Cl, F plasma) the portions of the hard mask which have been already partially etched away.

Abstract: This invention concerns coatings having high surface area materials and at least one metal ion adsorbed onto the high surface area material as well as substrates having the coating and methods of applying the coating. The substrates may be films, woven fabrics or may be nonwoven fabrics. The coatings have good odor and/or gas absorbing capabilities. Nonwoven fabrics include tissues, towels, coform materials, bonded carded webs, spunbond fabrics and so forth. The substrates may be made into storage and packaging material to reduce odor and retard the ripening of fruit. The substrates may be used in personal care products, to produce clothing for military and civilian applications and many other applications.

Abstract: An inventive semiconductor chip is provided. Generally, shallow trenches containing field oxide are provided on a substrate. At least one semiconductor device is formed between the shallow trenches. An oxide layer is formed over the at least one semiconductor device and the field oxide. An etch stop layer is formed over the oxide layer. An inter layer dielectric layer is formed over the etch stop layer. At least one contact hole is etched through the inter layer dielectric layer, the etch stop layer and at least partially through the oxide layer. The contact hole is filled with a conductive material.

Abstract: A borescope is received within a housing. The borescope includes a flexible end portion carrying the video head and a housing includes a flexible end portion comprised of ball-socket segments and a tip for following the movement of the flexible end portion of the borescope. Cooling air is provided in an annular passage between the borescope and housing for flow about the borescope to maintain the video head temperature below its temperature limitation. Two cables maintain the ball-socket segments and tip in contact with a transition piece and with one another to enable the flexible borescope end portion to follow the movement of the directionally controlled video head.

Abstract: An inventive semiconductor chip is provided. Generally, shallow trenches containing field oxide are provided on a substrate. At least one semiconductor device is formed between the shallow trenches. An oxide layer is formed over the at least one semiconductor device and the field oxide. An etch stop layer is formed over the oxide layer. An inter layer dielectric layer is formed over the etch stop layer. At least one contact hole is etched through the inter layer dielectric layer, the etch stop layer and at least partially through the oxide layer. The contact hole is filled with a conductive material.

Abstract: A method of making a semiconductor device includes providing a first element formed of a first substantially electrically conductive material and having an upper surface. A second element adjacent to the first element is provided. The second element is formed of a first substantially non-electrically conductive material. An upper surface of the second element slopes downwardly toward the upper surface of the first element. A first layer of a second substantially non-electrically conductive material is disposed over the upper surface of the first element and the upper surface of the second element. The first layer has a thickness in the vertical direction that is greater in an area over the downward slope of the second element than in an area over the first element. An etching process is performed such that the layer is perforated above the upper surface of the first element and imperforated in the vertically thicker area above the downwardly sloping upper surface of the second element.

Abstract: A flow-through assay device capable of detecting the presence or quantity of an analyte of interest is provided. The device is in communication with an electrochemical biosensor that utilizes detection and calibration working electrodes that communicate with affinity reagents, such as redox mediators and capture ligands. For instance, capture ligands that are specific binding members for the analyte of interest may be applied to the detection electrode to serve as the primary location for detection of the analyte. The calibration working electrode may be used to calibrate the detection working electrode for any intrinsic background current not generated by the reagents of the biosensor system. Moreover, capture ligands that are non-specific binding members for the analyte of interest may also be applied to the calibration electrode.

Abstract: A dielectric film block is used in semiconductor processing to protect selected areas of the wafer from silicidation. The selected areas may include resistors. A first layer of oxide is formed on the resistor and a second layer comprising SiON or Si3N4 is disposed on the oxide. A mask is patterned to allow etching to take place in the areas where silicide formation is desired. The oxide layer serves as an etch stop layer during etching of the second layer.

Abstract: An inventive semiconductor chip is provided. Generally, shallow trenches containing field oxide are provided on a substrate. At least one semiconductor device is formed between the shallow trenches. An oxide layer is formed over the at least one semiconductor device and the field oxide. An etch stop layer is formed over the oxide layer. An inter layer dielectric layer is formed over the etch stop layer. At least one contact hole is etched through the inter layer dielectric layer, the etch stop layer and at least partially through the oxide layer. The contact hole is filled with a conductive material.

Abstract: Improved methods and apparatus for chemically assisted etch processing in a plasma processing system are disclosed. In accordance with one aspect of the invention, improved techniques suitable for performing an etch process in the plasma processing can be realized. The invention operates to reduce the critical dimension bias that is associated with the etch process. Lower critical dimension bias provides many benefits. One such benefit is that features with higher aspect ratio can be etched correctly. In addition, several other undesired effects, e.g., micro loading, bowing and passivation, can be curtailed using the techniques of the present invention.

Abstract: Improved methods and apparatus for chemically assisted etch processing in a plasma processing system are disclosed. In accordance with one aspect of the invention, improved techniques suitable for performing an etch process in the plasma processing can be realized. The invention operates to reduce the critical dimension bias that is associated with the etch process. Lower critical dimension bias provides many benefits. One such benefit is that features with higher aspect ratio can be etched correctly. In addition, several other undesired effects, e.g., micro loading, bowing and passivation, can be curtailed using the techniques of the present invention.