Abstract: Electron beam phase gratings have phase profiles that produce a diffracted beam having a Gaussian or other selected intensity profile. Phase profiles can also be selected to correct or compensate electron lens aberrations. Typically, a low diffraction order produces a suitable phase profile, and other orders are discarded.

Abstract: Scanning probe microscope (SPM) images are enhanced by enforcing one or more symmetries that can be selected based on suitable Fourier coefficient amplitude or phase angle residuals, and/or geometric Akaike information criteria, and/or cross correlation techniques. Alternatively, this selection can be based on prior knowledge of specimen characteristics. In addition, a scanning microscope point spread function is obtained based on the evaluation of a calibration image by enforcing at least one symmetry and can be applied to other image acquisitions.

Abstract: Candidate structures for nanocrystal and other specimens are obtained based on a specimen complex spectrum that is determined as a Fourier transform of a phase-contrast electron micrograph. The specimen can also be assessed based on an amplitude portion of the complex spectrum using a lattice-fringe fingerprint. In some examples, the specimen complex spectrum is compensated based on an electron microscope transfer function, a specimen tilt, or based on other crystallographic compensation. Amplitude or phase portions of the compensated complex spectrum can be compared with reference structures stored in one or more reference structure databases.

Abstract: Scanning probe microscope (SPM) images are enhanced by enforcing one or more symmetries that can be selected based on suitable Fourier coefficient amplitude or phase angle residuals, and/or geometric Akaike information criteria, and/or cross correlation techniques. Alternatively, this selection can be based on prior knowledge of specimen characteristics. In addition, a scanning microscope point spread function is obtained based on the evaluation of a calibration image by enforcing at least one symmetry and can be applied to other image acquisitions.

Abstract: Nanometrology device standards and methods for fabricating and using such devices in conjunction with scanning probe microscopes are described. The fabrication methods comprise: (1) epitaxial growth that produces nanometer sized islands of known morphology, structural, morphological and chemical stability in typical nanometrology environments, and large height-to-width nano-island aspect ratios, and (2) marking suitable crystallographic directions on the device for alignment with a scanning direction.

Abstract: Candidate structures for nanocrystal and other specimens are obtained based on a specimen complex spectrum that is determined as a Fourier transform of a phase-contrast electron micrograph. The specimen can also be assessed based on an amplitude portion of the complex spectrum using a lattice-fringe fingerprint. In some examples, the specimen complex spectrum is compensated based on an electron microscope transfer function, a specimen tilt, or based on other crystallographic compensation. Amplitude or phase portions of the compensated complex spectrum can be compared with reference structures stored in one or more reference structure databases.

Abstract: A process for forming thermodynamically stable, epitaxially grown semiconductor quantum dots with varying degree of atomic long-range order is described. This procedure encompasses heteroepitaxial growth, external lattice mismatch strain and point defect engineering, and the conversion of a thermodynamically metastable semiconductor alloy predecessor structure into a structure of compositionally modulated/structurally transformed semiconductor quantum dots with varying degree of atomic long-range order by specific thermal treatments. These quantum dots are structurally stable at room temperature and reasonable device operation temperatures. The key structural transformation is achieved through thermodynamically driven atomic ordering. The resulting thermodynamically stable quantum dots have extensive applications in opto- and micro-electronic devices where the performance depends on both the structural and chemical homogeneity and long-term structural stability of these so called zero-dimensional entities.