Abstract: The present invention relates to novel polymers comprising a repeating unit of the formula (I) and their use in electronic devices. The polymers according to the invention have excellent solubility in organic solvents and excellent film-forming properties. In addition, high charge carrier mobilities and high stability of the emission color can be observed, if the polymers according to the invention are used in organic light emitting diodes (OLEDs).

Abstract: The present invention relates to polymers comprising repeating unit(s) of the formula (I), and their use in electronic devices. The polymers according to the invention have excellent solubility in organic solvents and excellent film-forming properties. In addition, high charge carrier mobilities and high temperature stability of the emission color are observed, if the polymers according to the invention are used in polymer light emitting diodes (PLEDs).

Abstract: This invention relates to electroluminescent metal complexes of the formula (I), or (II), a process for their preparation, electronic devices comprising the metal complexes and their use in electronic devices, especially organic light emitting diodes (OLEDs), as oxygen sensitive indicators, as phosphorescent indicators in bioassays, and as catalysts.

Abstract: The present invention relates to an electronic device, especially an electroluminescent devices, comprising a compound of Formula (I), especially as host for phosphorescent compounds. The hosts may function with phosphorescent materials to provide improved efficiency, stability, manufacturability, or spectral characteristics of electroluminescent devices.

Abstract: The present invention relates to novel polymers comprising a repeating unit of the formula (I) and their use in electronic devices. The polymers according to the invention have excellent solubility in organic solvents and excellent film-forming properties. In addition, high charge carrier mobilities and high stability of the emission color can be observed, if the polymers according to the invention are used in organic light emitting diodes (OLEDs).

Abstract: The present invention relates to compounds of the formula (I), a process for their preparation and their use in organic light emitting diodes (OLEDs), especially as host for phosphorescent compounds. The hosts may function with phosphorescent materials to provide improved efficiency, stability, manufacturability, or special characteristics of electroluminescent devices.

Abstract: This invention relates to electroluminescent metal complexes with benzotriazoles of the formula (I), a process for their preparation, electronic devices comprising the metal complexes and their use in electronic devices, especially organic light emitting diodes (OLEDs), as oxygen sensitive indicators, as phosphorescent indicators in bioassays, and as catalysts.

Abstract: Compounds of the Formula (I) wherein x is an integer from 1-4; p is an integer from 1-3; q is an integer from 0-3; Ar is phenyl, naphthyl, anthryl or phenanthryl each of which optionally is substituted by one or more Cl, CN, OR5, C3-C5alkenyl or C1-C6alkyl which optionally is substituted by one or more OR6, COOR or halogen; R1 if x is 1, is ORS, O—X+, NR8R9, C1-C20alkyl optionally substituted by one or more COOR10, or is C2-C20alkyl interrupted by one ore more O, or is C2-C5alkenyl or phenyl-C1-C4alkyl; R1 if x is 2, is for example C1-C20alkylene; R1 if x is 3, is for example a tri-valent radical; R1if x is 4, is for example a tetravalent radical; R2and R3are hydrogen or C1-C8alkyl, or R2and R3 together are O, C1-C3alkylene or CH?CH; R4 is C1-C4alkyl; R5, R6, R7, R8, R9 and R10 are for example hydrogen or C1-C4alkyl; and X is a x-valent cationic counter ion; are in particular suitable as photoinitiators for the curing with UV-A light (320-450 nm).

Abstract: The invention relates to a process for the preparation of (bis)acylphosphanes of formula I, wherein n and m are each independently of the other 1 or 2; R1 if n=1, is e.g. unsubstituted or substituted C1-C18alkyl or C2-C18alkenyl, or phenyl, R1 if n=2, is e.g. a divalent radical of the monovalent radical defined above; R2 is e.g. C1-C18alkyl, C3-C12cycloalkyl, C2-C18alkenyl, mesityl, phenyl, naphthyl; R3 is one of the radicals defined under R1; the process comprises the steps a) contacting e.g.

Abstract: The present invention relates electroluminescent devices, comprising a compound of the formula (I), especially as host for phosphorescent compounds. The hosts may function with phosphorescent materials to provide improved efficiency, stability, manufacturability, or spectral characteristics of electroluminescent devices.

Abstract: The present invention relates to novel polymers comprising a repeating unit(s) of the formula (I) wherein at least one of the substituents R1, R2, R3, R4, R5, R6 and R7 is a group -(Sp)x1-HEI, wherein Sp is a spacer unit, HEI is a group (HEII), which increases the hole-injection and/or hole-transport properties of the polymers; or a group (HEIII), which increases the electron-injection and/or electron-transport properties of the polymers, or a group (HEIIII), which increases the hole-injection and/or hole-transport properties of the polymers and the electron-injection and/or electron-transport properties of the polymers, x1 is 0, or 1, and their use in electronic devices. The polymers according to the invention have excellent solubility in organic solvents and excellent film-forming properties. In addition, high charge carrier mobilities and high temperature stability of the emission color can be observed, if the polymers according to the invention are used in polymer light emitting diodes (PLEDs).

Abstract: The present invention relates to polymers comprising a repeating unit of the formula (I), and their use in electronic devices. The polymers according to the invention have excellent 5 solubility in organic solvents and excellent film-forming properties. In addition, high charge carrier mobilities and high temperature stability of the emission color are observed, if the polymers according to the invention are used in polymer light emitting diodes (PLEDs).

Abstract: Compounds of the formula I or II wherein R1 is C1-C10haloalkylsulfonyl, halobenzenesulfonyl, C2-C10haloalkanoyl, halobenzoyl; R2 is halogen or C1-C10haloalkyl; Ar1 is phenyl, biphenylyl, fluorenyl, naphthyl, anthracyl, phenanthryl, or heteroaryl, all of which are optionally substituted; Ar?1 is for example phenylene, naphthylene, diphenylene, heteroarylene, oxydiphenylene, phenylene-D-D1-D-phenylene or —Ar?1-A1-Y1-A1-Ar?1—; wherein these radicals optionally are substituted; Ar?1 is phenylene, naphthylene, anthracylene, phenanthrylene, or heteroarylene, all optionally substituted; A1 is for example a direct bond, —O—, —S—, or —NR6—; Y1 inter alia is C1-C18alkylene; X is halogen; D is for example —O—, —S— or —NR6—; D1 inter alia is C1-C18alkylene; are particularly suitable as photolatent acids in ArF resist technology.

Abstract: Chemically amplified photoresist compositions comprising, (a) a compound which cures upon the action of an acid or a compound whose solubility is increased upon the action of an acid; and (b) a compound of the formula Ia, Ib, IIa, IIb, IIIa, IIIb, IVa, IVb, Va, Vb or VIa wherein n is 1 or 2; m is 0 or 1; X0 is —[CH2]h—X or —CH?CH2; h is 2, 3, 4, 5 or 6; R1, when n is 1, is for example optionally substituted phenyl, naphthyl, anthracyl, phenanthryl, or heteroaryl; R1, when n is 2, is for example optionally substituted phenylene or naphthylene; R2 for example has one of the meanings of R1; X is for example —OR20, —NR21R22, —SR23; X? is —X1-A3-X-; X1 and X2 are for example —O—, —S— or a direct bond; A3 is e.g. phenylene; R3 has for example one of the meanings given for R1; R4 has for example one of the meaning given for R2; R5 and R6 e.g. are hydrogen; G i.a. is —S— or —O—; R7 when n is 1, e.g. is phenyl, optionally substituted, when n is 2, is for example phenylene; R8 and R9 e.g.

Abstract: The present invention relates to a new, selective process for the preparation of mono- and bisacylphosphanes of formula (I) n and m are each independently of the other 1 or 2; R1, if n=1, is e.g. phenyl R1, if n=2, is e.g. C1-C18alkylene or phenylene; R2 is e. g. C1-C18alkyl, phenyl or substituted phenyl; R3 is e. g. C1-C18alkyl, by (1) reacting a phosphorous halide of formula IIa or a phosphorous halide oxide of formula (IIb) or a phosphorous halide sulfide of formula (IIc) with an alkali metal in a solvent in the presence of a proton source; (2) subsequent reaction with m acid halides of formula (III) An oxidation step may follow to obtain mono- and bisacylphosphane oxides or mono- and bisacylphosphane sulfides.

Abstract: Compounds of the formula (I) or (II) wherein R1 is C1-C10haloalkylsulfonyl, halobenzenesulfonyl, C2- C10haloalkanoyl, halobenzoyl; R2 is halogen or C1-C10 haloalkyl; Arl is phenyl, biphenylyl, fluorenyl, naphthyl, anthracyl, phenanthryl, or heteroaryl, all of which are optionally substituted; Ar?1 is for example phenylene, naphthylene, diphonylene, heteroarylene, oxydiphenylene, phenyleneD-D1-D-phenylene or —Ar?1-A1—Y1-A1—Ar?1—; wherein these radicals optionally are substituted; Ae?, is phenylene, naphthylene, anthracylene, phenanthrylene, or heteroarylene, all optionally substituted; A, is for example a direct bond, —0—, —S—, or —NR6—; Y, inter alia is C1-C18alkylene; X is halogen; D is for example —0—, —S— or —NR6—; D, inter alia is C1-C18alkylene; are particularly suitable as photolatent acids in ArF resist technology.

Abstract: Chemically amplified photoresist compositions comprising, (a) a compound which cures upon the action of an acid or a compound whose solubility is increased upon the action of an acid; and (b) a compound of the formula (Ia), (Ib), (IIa), (IIb), (IIIa), (IIIb), (Iva), (Ivb), (Va), (Vb) or (VIa), wherein n is 1 or 2; m is 0 or 1; X0 is —[CH2]h—X or —CH?CH2; h is 2, 3, 4, 5 or 6; R1 when n is 1, is for example optionally substituted phenyl, naphthyl, anthracyl, phenanthryl, or heteroaryl; R1, when n is 2, is for example optionally substituted phenylene or naphthylene; R2 for example has one of the meanings of R1; X is for example —OR20, —NR21R22, —SR23; X? is -X1-A3-X2-; X1 and X2 are for example —O—, —S— or a direct bond; A3 is e.g. phenylene; R3 has for example one of the meanings given for R1; R4 has for example one of the meaning given for R2; R5 and R6 e.g. are hydrogen; G i.a. is —S— or —O—; R7 when n is 1, e.g. is phenyl, optionally substituted, when n is 2, is for example phenylene; R8 and R9 e.g.

Abstract: The invention relates to a process for the preparation of (bis)acylphosphanes of formula I, wherein n and m are each independently of the other 1 or 2; R1 if n=1, is e.g. unsubstituted or substituted C1-C18alkyl or C2-C18alkenyl, or phenyl, R1 if n=2, is e.g. a divalent radical of the monovalent radical defined above; R2 is e.g. C1-C18alkyl, C3-C12cycloalkyl, C2-C18alkenyl, mesityl, phenyl, naphthyl; R3 is one of the radicals defined under R1; the process comprises the steps a) contacting e.g.

Abstract: The present invention relates to a new, selective process for the preparation of mono- and bisacylphosphanes of formula (I) n and m are each independently of the other 1 or 2; R1, if n=1, is e.g. phenyl R1, if n=2, is e.g. C1-C18alkylene or phenylene; R2 is e.g. C1-C18alkyl, phenyl or substituted phenyl; R3 is e.g. C1-C18alkyl, by (I) reacting a phosphorous halide of formula IIa or a phosphorous halide oxide of formula (IIb) or a phosphorous halide sulfide of formula (IIc) with an alkali metal in a solvent in the presence of a proton source; (2) subsequent reaction with m acid halides of formula (III) An oxidation step may follow to obtain mono- and bisacylphosphane oxides or mono-and bisacylphosphane sulfides.

Abstract: Compounds of the formula (I) or (II) wherein R1 is C1-C10haloalkylsulfonyl, halobenzenesulfonyl, C2-C10haloalkanoyl, halobenzoyl; R2 is halogen or C1-C10 haloalkyl; Ar1 is phenyl, biphenylyl, fluorenyl, naphthyl, anthracyl, phenanthryl, or heteroaryl, all of which are optionally substituted; Ar?1 is for example phenylene, naphthylene, diphonylene, heteroarylene, oxydiphenylene, phenyleneD-D1-D-phenylene or —Ar?1-A1-Y1-A1-Ar?1—; wherein these radicals optionally are substituted; Ae?, is phenylene, naphthylene, anthracylene, phenanthrylene, or heteroarylene, all optionally substituted; A, is for exampfe a direct bond, -0-, —S—, or —NR6—; Y, inter alia is C1-C18alkylene; X is halogen; D is for example -0-, —S— or —NR6—; D, inter alia is C1-C18alkylene; are particularly suitable as photolatent acids in ArF resist technology.