Abstract: A light-emitting structure comprises a substrate, a sub-pixel stack patterned over the substrate, an insulating material patterned to surround the emissive stack, and a bank patterned to surround the sub-pixel stack and the insulating material. The sub-pixel stack comprises an emissive stack between a first electrode layer and a second electrode layer.

Abstract: A method of operating an EWOD device to employs a magnetic field to separate magnetically responsive particles from a polar liquid droplet. The method includes the steps of dispensing a liquid droplet onto an element array of the EWOD device, wherein the liquid droplet includes magnetically responsive particles; performing an electrowetting operation to move the liquid droplet along the element array to a location relative to a magnet element in proximity to that location of the EWOD device; operating the magnet element to apply a magnetic field to the liquid droplet, wherein at least a portion of the magnetically responsive particles aggregate within the liquid droplet in response to the magnetic field; and separating the aggregated magnetically responsive particles from the liquid droplet with the magnetic field, wherein the aggregated magnetically responsive particles move in response to the magnetic field to a location on the element array in proximity to the magnet element.

Abstract: A control method and related apparatus are disclosed for controlling actuation voltages applied to array elements of an element array on an electrowetting on dielectric (EWOD) device, wherein test metrics are determined and employed for optimizing subsequent droplet manipulation operations. The control method includes the steps of: receiving a liquid droplet onto the element array; applying an electrowetting actuation pattern of actuation voltages to actuate the droplet to modify a footprint of the droplet from a first state having an initial footprint to a second state having a modified footprint; sensing the modified footprint with a sensor; determining a test metric from sensing the modified footprint indicative of one or more droplet properties based on a droplet response of the liquid droplet to the electrowetting actuation pattern; and controlling actuation voltages applied to the array elements based on the test metric.

Abstract: An electrowetting on dielectric (EWOD) device includes an EWOD device array that applies electrowetting forces and contains a non-polar fluid. A barrier droplet configuration is formed using electrowetting forces to obstruct migration of a species from a first area of the EWOD device array to a protected area of the EWOD device array. A method of operating the EWOD device includes the steps of: dispensing a source droplet into a first area of the EWOD device array, the source droplet containing a migrating species, wherein the EWOD device array includes a second area to be protected from the migrating species; and forming a barrier droplet configuration positioned between the first area and the second area of the EWOD device array that obstructs a migration pathway of the migrating species between the first area and the second area.

Abstract: An electrowetting on dielectric (EWOD) device includes an EWOD device array that applies electrowetting forces and contains a non-polar fluid. A barrier droplet configuration is formed using electrowetting forces to obstruct migration of a species from a first area of the EWOD device array to a protected area of the EWOD device array. A method of operating the EWOD device includes the steps of: dispensing a source droplet into a first area of the EWOD device array, the source droplet containing a migrating species, wherein the EWOD device array includes a second area to be protected from the migrating species; and forming a barrier droplet configuration positioned between the first area and the second area of the EWOD device array that obstructs a migration pathway of the migrating species between the first area and the second area.

Abstract: A control method and related apparatus are disclosed for controlling actuation voltages applied to array elements of an element array on an electrowetting on dielectric (EWOD) device, wherein test metrics are determined and employed for optimizing subsequent droplet manipulation operations. The control method includes the steps of: receiving a liquid droplet onto the element array; applying an electrowetting actuation pattern of actuation voltages to actuate the droplet to modify a footprint of the droplet from a first state having an initial footprint to a second state having a modified footprint; sensing the modified footprint with a sensor; determining a test metric from sensing the modified footprint indicative of one or more droplet properties based on a droplet response of the liquid droplet to the electrowetting actuation pattern; and controlling actuation voltages applied to the array elements based on the test metric.

Abstract: The present application provides nitride semiconductor nanoparticles, for example nanocrystals, made from a new composition of matter in the form of a novel compound semiconductor family of the type group II-III-N, for example ZnGaN, ZnInN, ZnInGaN, ZnAlN, ZnAlGaN, ZnAlInN and ZnAlGaInN. This type of compound semiconductor nanocrystal is not previously known in the prior art. The invention also discloses II-N semiconductor nanocrystals, for example ZnN nanocrystals, which are a subgroup of the group II-III-N semiconductor nanocrystals. The composition and size of the new and novel II-III-N compound semiconductor nanocrystals can be controlled in order to tailor their band-gap and light emission properties. Efficient light emission in the ultraviolet-visible-infrared wavelength range is demonstrated.

Abstract: A method of producing nitride nanoparticles comprises reacting at least one organometallic compound, for example an alkyl metal, with at least one source of nitrogen. The reaction may involve one or more liquid phase organometallic compounds, or may involve one or more liquid phase organometallic compounds dissolved in a solvent or solvent mixture. The reaction constituents may be heated to a desired reaction temperature (for example in the range 40° C. to 300° C.).

Abstract: An electrowetting on dielectric device includes: (a) a first substrate comprising electrodes at a surface of the first substrate configured to effect electrowetting mediated droplet operations; (b) a second substrate spaced from the surface of the first substrate to define an interior volume between the first substrate and the second substrate; (c) a liquid droplet disposed in the interior volume; and (d) a filler fluid disposed in the interior volume and surrounding the liquid droplet, wherein one or both of the liquid droplet and filler fluid contains a surfactant, the surfactant comprising a siloxane group represented by the structural formula: where n?1.

Abstract: A method of producing nitride nanoparticles comprises reacting at least one organometallic compound, for example an alkyl metal, with at least one source of nitrogen. The reaction may involve one or more liquid phase organometallic compounds, or may involve one or more liquid phase organometallic compounds dissolved in a solvent or solvent mixture. The reaction constituents may be heated to a desired reaction temperature (for example in the range 40° C. to 300° C.).

Abstract: A population of light-emissive nitride nanoparticles has a photoluminescence quantum yield of at least 10% and an emission spectrum having a full width at half maximum intensity (FWHM) of less than 100 nm. One suitable method of producing light-emissive nitride nanoparticles comprises a first stage of heating a reaction mixture consisting essentially of nanoparticle precursors in a solvent, the nanoparticle precursors including at least one metal-containing precursor and at least one first nitrogen-containing precursor, and maintaining the reaction mixture at a temperature to seed nanoparticle growth. It further comprises a second stage of adding at least one second nitrogen-containing precursor to the reaction mixture thereby to promote nanoparticle growth.

Abstract: A method of manufacturing a nitride nanoparticle comprises manufacturing the nitride nanostructure from constituents including: a material containing metal, silicon or boron, a material containing nitrogen, and a capping agent having an electron-accepting group for increasing the quantum yield of the nitride nanostructure. Nitride nanoparticles, for example nitride nanocrystals, having a photoluminescence quantum yield of at least 1%, and up to 20% or greater, may be obtained.

Abstract: The present application provides nitride semiconductor nanoparticles, for example nanocrystals, made from a new composition of matter in the form of a novel compound semiconductor family of the type group II-III-N, for example ZnGaN, ZnInN, ZnInGaN, ZnAlN, ZnAlGaN, ZnAlInN and ZnAlGaInN. This type of compound semiconductor nanocrystal is not previously known in the prior art. The invention also discloses II-N semiconductor nanocrystals, for example ZnN nanocrystals, which are a subgroup of the group II-III-N semiconductor nanocrystals. The composition and size of the new and novel II-III-N compound semiconductor nanocrystals can be controlled in order to tailor their band-gap and light emission properties. Efficient light emission in the ultraviolet-visible-infrared wavelength range is demonstrated.

Abstract: The present application provides nitride semiconductor nanoparticles, for example nanocrystals, made from a new composition of matter in the form of a novel compound semiconductor family of the type group II-III-N, for example ZnGaN, ZnInN, ZnInGaN, ZnAlN, ZnAlGaN, ZnAlInN and ZnAlGaInN. This type of compound semiconductor nanocrystal is not previously known in the prior art. The invention also discloses II-N semiconductor nanocrystals, for example ZnN nanocrystals, which are a subgroup of the group II-III-N semiconductor nanocrystals. The composition and size of the new and novel II-III-N compound semiconductor nanocrystals can be controlled in order to tailor their band-gap and light emission properties. Efficient light emission in the ultraviolet-visible-infrared wavelength range is demonstrated.

Abstract: The present application provides a light-emissive nitride nanoparticle, for example a nanocrystal, having a photoluminescence quantum yield of at least 1%. This quantum yield is significantly greater than for prior nitride nanoparticles, which have been only weakly emissive and have had poor control over the size of the nanoparticles produced. The nanoparticle includes at least one capping agent provided on a surface of the nitride crystal and containing an electron-accepting group for passivating nitrogen atoms at the surface of the crystal. The invention also provides non-emissive nitride nanoparticles.

Abstract: A population of light-emissive nitride nanoparticles has a photoluminescence quantum yield of at least 10% and an emission spectrum having a full width at half maximum intensity (FWHM) of less than 100 nm. One suitable method of producing light-emissive nitride nanoparticles comprises a first stage of heating a reaction mixture consisting essentially of nanoparticle precursors in a solvent, the nanoparticle precursors including at least one metal-containing precursor and at least one first nitrogen-containing precursor, and maintaining the reaction mixture at a temperature to seed nanoparticle growth. It further comprises a second stage of adding at least one second nitrogen-containing precursor to the reaction mixture thereby to promote nanoparticle growth.

Abstract: The present application provides a new composition of matter in the form of a new compound semiconductor family of the type group Zn-(II)-III-N, where III denotes one or more elements in Group III of the periodic table and (II) denotes one or more optional further elements in Group II of the periodic table. Members of this family include for example, ZnGaN, ZnInN, ZnInGaN, ZnAlN, ZnAlGaN, ZnAlInN or ZnAlGaInN. This type of compound semiconductor material is not previously known in the prior art. The composition of the new Zn-(II)-III-N compound semiconductor material can be controlled in order to tailor its band-gap and light emission properties. Efficient light emission in the ultraviolet-visible-infrared wavelength range is demonstrated. The products of this invention are useful as constituents of optoelectronic devices such as solar cells, light emitting diodes, laser diodes and as a light emitting phosphor material for LEDs and emissive EL displays.

Abstract: The present application provides nitride semiconductor nanoparticles, for example nanocrystals, made from a new composition of matter in the form of a novel compound semiconductor family of the type group II-III-N, for example ZnGaN, ZnInN, ZnInGaN, ZnAlN, ZnAlGaN, ZnAlInN and ZnAlGaInN. This type of compound semiconductor nanocrystal is not previously known in the prior art. The invention also discloses II-N semiconductor nanocrystals, for example ZnN nanocrystals, which are a subgroup of the group II-III-N semiconductor nanocrystals. The composition and size of the new and novel II-III-N compound semiconductor nanocrystals can be controlled in order to tailor their band-gap and light emission properties. Efficient light emission in the ultraviolet-visible-infrared wavelength range is demonstrated.

Abstract: A method of manufacturing a nitride nanoparticle comprises manufacturing the nitride nanostructure from constituents including: a material containing metal, silicon or boron, a material containing nitrogen, and a capping agent having an electron-accepting group for increasing the quantum yield of the nitride nanostructure. Nitride nanoparticles, for example nitride nanocrystals, having a photoluminescence quantum yield of at least 1%, and up to 20% or greater, may be obtained.

Abstract: The present application provides a light-emissive nitride nanoparticle, for example a nanocrystal, having a photoluminescence quantum yield of at least 1%. This quantum yield is significantly greater than for prior nitride nanoparticles, which have been only weakly emissive and have had poor control over the size of the nanoparticles produced. The nanoparticle includes at least one capping agent provided on a surface of the nitride crystal and containing an electron-accepting group for passivating nitrogen atoms at the surface of the crystal. The invention also provides non-emissive nitride nanoparticles.