Patents by Inventor Peter Nicholas Heys

Peter Nicholas Heys has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9802220
    Abstract: Molybdenum (IV) amide complexes are disclosed herein corresponding in structure to Formula (I): wherein: L is —NR1R2; R1 and R2 are C1-C6-alkyl or hydrogen; R is C1-C6-alkyl; and n is zero, 1, 2 or 3. Further, methods of forming MoO2 films by atomic layer deposition (ALD) using Formula (I) complexes and Mo[N(Me)(Et)]4 are disclosed herein.
    Type: Grant
    Filed: August 25, 2011
    Date of Patent: October 31, 2017
    Assignee: Merck Patent GmbH
    Inventors: Peter Nicholas Heys, Rajesh Odedra, Sarah Louise Hindley
  • Patent number: 8613975
    Abstract: Methods are provided to form and stabilize high-? dielectric films by chemical phase deposition processes using metal-source precursors and cerium-based ?-diketonate precursors according to Formula I: Ce(L)x (Formula I) wherein: L is a ?-diketonate; and x is 3 or 4. Further provided are methods of improving high-? gate property of semiconductor devices by using cerium precursors according to Formula I. High-? dielectric films are also provided comprising hafnium oxide, titanium oxide or mixtures thereof, and further containing a permittivity maintaining or increasing amount of cerium atoms.
    Type: Grant
    Filed: May 22, 2009
    Date of Patent: December 24, 2013
    Assignee: Sigma-Aldrich Co. LLC
    Inventors: Paul Raymond Chalker, Peter Nicholas Heys
  • Patent number: 8568530
    Abstract: Precursors suitable for chemical vapor deposition, especially ALD, of hafnium oxide or zirconium oxide, have the general formula: (R1Cp)2MR2 wherein Cp represents a cyclopentadienyl ligand, R1 is H or a substituting alkyl group, alkoxy group or amido group of the Cp ligand, R2 is an alkyl group, an alkoxy group or an amido group and M is hafnium or zirconium.
    Type: Grant
    Filed: June 8, 2006
    Date of Patent: October 29, 2013
    Assignee: Sigma-Aldrich Co. LLC
    Inventors: Peter Nicholas Heys, Paul Williams, Fuquan Song
  • Publication number: 20130196065
    Abstract: Molybdenum (IV) amide complexes are disclosed herein corresponding in structure to Formula (I): wherein: L is —NR1R2; R1 and R2 are C1-C6-alkyl or hydrogen; R is C1-C6-alkyl; and n is zero, 1, 2 or 3. Further, methods of forming MoO2 films by atomic layer deposition (ALD) using Formula (I) complexes and Mo[N(Me)(Et)]4 are disclosed herein.
    Type: Application
    Filed: August 25, 2011
    Publication date: August 1, 2013
    Applicant: Sigma-Aldrich Co LLC
    Inventors: Peter Nicholas Heys, Rajesh Odedra, Sarah Louise Hindley
  • Patent number: 8221852
    Abstract: Methods of forming titanium-containing films by atomic layer deposition are provided. The methods comprise delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula I: wherein: R is C1-C6-alkyl; n is zero, 1, 2, 3, 4 or 5; L is C1-C6-alkoxy or amino, wherein the amino is optionally independently substituted 1 or 2 times with C1-C6-alkyl.
    Type: Grant
    Filed: September 10, 2008
    Date of Patent: July 17, 2012
    Assignee: Sigma-Aldrich Co. LLC
    Inventors: Peter Nicholas Heys, Andrew Kingsley, Fuquan Song, Paul Williams, Thomas Leese, Hywel Owen Davies, Rajesh Odedra
  • Publication number: 20120178266
    Abstract: Compositions and methods for forming titanium-containing thin films are provided. The compositions comprise at least one precursor selected from the group consisting of (methylcyclopentadienyl)Ti(NMe2)3, (ethylcyclopentadienyl)Ti(NMe2)3, (isopropylcyclopentadienyl)Ti(NMe2)3, (methylcyclopentadienyl)Ti(NEt2)3, (methylcyclopentadienyl)Ti(NMeEt)3, (ethylcyclopentadienyl)Ti(NMeEt)3 and (methylcyclopentadienyl)Ti(OMe)3; and at least one liquification co-factor other than the at least one precursor; wherein the at least one liquification co-factor is present in amount sufficient to co-act with the at least one precursor, and in combination with the at least one precursor, forms a liquid composition.
    Type: Application
    Filed: July 19, 2010
    Publication date: July 12, 2012
    Applicant: SIGMA-AIDRICH CO. LLC
    Inventors: Peter Nicholas Heys, Rajesh Odedra, Andrew Kingsley
  • Patent number: 8039062
    Abstract: Methods of forming a metal-containing film by atomic layer deposition is provided. The methods comprise delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula II: wherein: M is Hf or Zr; R is C1-C6-alkyl; n is zero, 1, 2, 3, 4 or 5; L is C1-C6-alkoxy. Further methods are provided of forming a metal-containing film by liquid injection atomic layer deposition. The methods comprise delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula III: wherein: M is Hf or Zr; R is C1-C6-alkyl; n is zero, 1, 2, 3, 4 or 5; L is amino, wherein the amino is optionally independently substituted 1 or 2 times with C1-C6-alkyl.
    Type: Grant
    Filed: September 10, 2008
    Date of Patent: October 18, 2011
    Assignee: Sigma-Aldrich Co. LLC
    Inventors: Peter Nicholas Heys, Andrew Kingsley, Fuquan Song, Paul Williams, Thomas Leese, Hywel Owen Davies, Rajesh Odedra
  • Publication number: 20110165401
    Abstract: Methods are provided to form and stabilize high-? dielectric films by chemical phase deposition processes using metal-source precursors and cerium-based ?-diketonate precursors according to Formula I: Ce(L)x (Formula I) wherein: L is a ?-diketonate; and x is 3 or 4. Further provided are methods of improving high-? gate property of semiconductor devices by using cerium precursors according to Formula I. High-? dielectric films are also provided comprising hafnium oxide, titanium oxide or mixtures thereof, and further containing a permittivity maintaining or increasing amount of cerium atoms.
    Type: Application
    Filed: May 22, 2009
    Publication date: July 7, 2011
    Applicant: SIGMA-ALDRICH CO.
    Inventors: Paul Raymond Chalker, Peter Nicholas Heys
  • Publication number: 20110151227
    Abstract: Methods are provided to form and stabilize high-? dielectric films by vapor deposition processes using metal-source precursors and titanium-based ?-diketonate precursors according to Formula I: Ti(L)x wherein: L is a ?-diketonate; and x is 3 or 4. Further provided are methods of improving high-? gate property of semiconductor devices by using titanium precursors according to Formula I. High-? dielectric film-forming lattices are also provided comprising titanium precursors according to Formula I.
    Type: Application
    Filed: May 22, 2009
    Publication date: June 23, 2011
    Applicant: SIGMA-ALDRICH CO.
    Inventors: Paul Raymond Chalker, Peter Nicholas Heys
  • Publication number: 20090081385
    Abstract: Methods of forming a metal-containing film by atomic layer deposition is provided. The methods comprise delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula II: wherein: M is Hf or Zr; R is C1-C6-alkyl; n is zero, 1, 2, 3, 4 or 5; L is C1-C6-alkoxy. Further methods are provided of forming a metal-containing film by liquid injection atomic layer deposition. The methods comprise delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula III: wherein: M is Hf or Zr; R is C1-C6-alkyl; n is zero, 1, 2, 3, 4 or 5; L is amino, wherein the amino is optionally independently substituted 1 or 2 times with C1-C6-alkyl.
    Type: Application
    Filed: September 10, 2008
    Publication date: March 26, 2009
    Inventors: Peter Nicholas Heys, Andrew Kingsley, Fuquan Song, Paul Williams, Thomas Leese, Hywel Owen Davies, Rajesh Odedra
  • Publication number: 20090074983
    Abstract: Methods of forming titanium-containing films by atomic layer deposition are provided. The methods comprise delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula I: wherein: R is C1-C6-alkyl; n is zero, 1, 2, 3, 4 or 5; L is C1-C6-alkoxy or amino, wherein the amino is optionally independently substituted 1 or 2 times with C1-C6-alkyl.
    Type: Application
    Filed: September 10, 2008
    Publication date: March 19, 2009
    Inventors: Peter Nicholas Heys, Andrew Kingsley, Fuquan Song, Paul Williams, Thomas Leese, Hywel Owen Davies, Rajesh Odedra
  • Publication number: 20080282970
    Abstract: Precursors suitable for chemical vapour deposition, especially ALD, of hafnium oxide or zirconium oxide, have the general formula: (R1Cp)2MR2 wherein Cp represents a cyclopentadienyl ligand, R1 is H or a substituting alkyl group, alkoxy group or amido group of the Cp ligand, R2 is an alkyl group, an alkoxy group or an amido group and M is hafnium or zirconium.
    Type: Application
    Filed: June 8, 2006
    Publication date: November 20, 2008
    Inventors: Peter Nicholas Heys, Paul Williams, Fuquan Song
  • Patent number: RE45124
    Abstract: Methods of forming titanium-containing films by atomic layer deposition are provided. The methods comprise delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula I: wherein: R is C1-C6-alkyl; n is zero, 1, 2, 3, 4 or 5; L is C1-C6-alkoxy or amino, wherein the amino is optionally independently substituted 1 or 2 times with C1-C6-alkyl.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: September 9, 2014
    Assignee: Sigma-Aldrich Co. LLC
    Inventors: Peter Nicholas Heys, Andrew Kingsley, Fuquan Song, Paul Williams, Thomas Leese, Hywel Owen Davies, Rajesh Odedra