Abstract: A method for inspecting a sample with a multi-electron beam inspection system (100) is described. The method includes: placing the sample on a movable stage (110) extending in an X-Y-plane; generating a plurality of electron beams (105) propagating toward the sample; focusing the plurality of electron beams on the sample at a plurality of probe positions (106) in a two-dimensional array; scanning the sample surface by moving the movable stage in a predetermined scanning pattern while maintaining the plurality of electron beams stationary; and detecting signal electrons emitted from the sample during the movement of the movable stage for inspecting the sample. Further, a multi-electron beam inspection system (100) for inspecting a sample according to the above method is described.

Abstract: The present disclosure generally relates to an improved large area substrate thin film transistor device, and method of fabrication thereof. More specifically, amorphous and LTPS transistors are formed by first forming an amorphous silicon layer, annealing the amorphous silicon layer to form polycrystalline silicon, depositing a masking layer over a first portion of the polycrystalline silicon layer, implanting a second portion of the polycrystalline silicon layer with an amorphizing species, and removing the masking layer.

Abstract: The present disclosure generally relates to an improved large area substrate thin film transistor device, and method of fabrication thereof. More specifically, amorphous and LTPS transistors are formed by first forming an amorphous silicon layer, annealing the amorphous silicon layer to form polycrystalline silicon, depositing a masking layer over a first portion of the polycrystalline silicon layer, implanting a second portion of the polycrystalline silicon layer with an amorphizing species, and removing the masking layer.

Abstract: Apparatuses and methods for manufacturing a solar cell are disclosed. In a particular embodiment, the solar cell may be manufactured by disposing a solar cell in a chamber having a particle source; disposing a patterned assembly comprising an aperture and an assembly segment between the particle source and the solar cell; and selectively implanting first type dopants traveling through the aperture into a first region of the solar cell while minimizing introduction of the first type dopants into a region outside of the first region.

Abstract: A particle isolation system includes a semiconductor process chamber; at least one member within the semiconductor process chamber wherein the member has at least a first position and a second position; and at least one isolation compartment having a plurality of walls, the isolation compartment defined by the plurality of walls, at least one of the plurality of walls of the isolation compartment defining at least one opening wherein the member in the first position permits particles to enter the isolation compartment from the semiconductor process chamber through the opening, and wherein the member in the second position substantially encloses the isolation compartment thereby substantially retaining the particles in the isolation compartment and substantially limiting movement of the particles between the semiconductor process chamber and the isolation compartment through the opening. An ion implant system is also provided.

Abstract: Apparatuses and methods for manufacturing a solar cell are disclosed. In a particular embodiment, the solar cell may be manufactured by disposing a solar cell in a chamber having a particle source; disposing a patterned assembly comprising an aperture and an assembly segment between the particle source and the solar cell; and selectively implanting first type dopants traveling through the aperture into a first region of the solar cell while minimizing introduction of the first type dopants into a region outside of the first region.

Abstract: Apparatuses and methods for manufacturing a solar cell are disclosed. In a particular embodiment, the solar cell may be manufactured by disposing a solar cell in a chamber having a particle source; disposing a patterned assembly comprising an aperture and an assembly segment between the particle source and the solar cell; and selectively implanting first type dopants traveling through the aperture into a first region of the solar cell while minimizing introduction of the first type dopants into a region outside of the first region.

Abstract: A method for wafer bonding two substrates activated by ion implantation is disclosed. An in situ ion bonding chamber allows ion activation and bonding to occur within an existing process tool utilized in a manufacturing process line. Ion activation of at least one of the substrates is performed at low implant energies to ensure that the wafer material below the thin surface layers remains unaffected by the ion activation.

Abstract: A particle isolation system includes a semiconductor process chamber; at least one member within the semiconductor process chamber wherein the member has at least a first position and a second position; and at least one isolation compartment having a plurality of walls, the isolation compartment defined by the plurality of walls, at least one of the plurality of walls of the isolation compartment defining at least one opening wherein the member in the first position permits particles to enter the isolation compartment from the semiconductor process chamber through the opening, and wherein the member in the second position substantially encloses the isolation compartment thereby substantially retaining the particles in the isolation compartment and substantially limiting movement of the particles between the semiconductor process chamber and the isolation compartment through the opening. An ion implant system is also provided.

Abstract: An approach for providing a cleave initiation using a varying ion implant dose is described. In one embodiment, there is a method of forming a substrate. In this embodiment, a semiconductor material is provided and implanted with a spatially varying dose of one or more ion species. A handler substrate is attached to the implanted semiconductor material. A cleave of the implanted semiconductor material is initiated from the handler substrate at a preferential location that is a function of a dose gradient that develops from the spatially varying dose of one or more ion species implanted into the semiconductor material.

Abstract: Apparatuses and methods for manufacturing a solar cell are disclosed. In a particular embodiment, the solar cell may be manufactured by disposing a solar cell in a chamber having a particle source; disposing a patterned assembly comprising an aperture and an assembly segment between the particle source and the solar cell; and selectively implanting first type dopants traveling through the aperture into a first region of the solar cell while minimizing introduction of the first type dopants into a region outside of the first region.

Abstract: Apparatuses and methods for manufacturing a solar cell are disclosed. In a particular embodiment, the solar cell may be manufactured by disposing a solar cell in a chamber having a particle source; disposing a patterned assembly comprising an aperture and an assembly segment between the particle source and the solar cell; and selectively implanting first type dopants traveling through the aperture into a first region of the solar cell while minimizing introduction of the first type dopants into a region outside of the first region.

Abstract: Apparatuses and methods for manufacturing a solar cell are disclosed. In a particular embodiment, the solar cell may be manufactured by disposing a solar cell in a chamber having a particle source; disposing a patterned assembly comprising an aperture and an assembly segment between the particle source and the solar cell; and selectively implanting first type dopants traveling through the aperture into a first region of the solar cell while minimizing introduction of the first type dopants into a region outside of the first region.

Abstract: An approach for providing a cleave initiation using a varying ion implant dose is described. In one embodiment, there is a method of forming a substrate. In this embodiment, a semiconductor material is provided and implanted with a spatially varying dose of one or more ion species. A handler substrate is attached to the implanted semiconductor material.

Abstract: An approach for nano-cleaving a thin-film of silicon for solar cell fabrication is described. In one embodiment, there is a method of forming a substrate for use as a solar cell substrate. In this embodiment, a substrate of silicon is provided and implanted with an ion flux. A non-silicon substrate is attached to the thin-film of silicon to form a solar cell substrate.

Abstract: A method for wafer bonding two substrates activated by ion implantation is disclosed. An in situ ion bonding chamber allows ion activation and bonding to occur within an existing process tool utilized in a manufacturing process line. Ion activation of at least one of the substrates is performed at low implant energies to ensure that the wafer material below the thin surface layers remains unaffected by the ion activation.

Abstract: A particle isolation system includes a semiconductor process chamber; at least one member within the semiconductor process chamber wherein the member has at least a first position and a second position; and at least one isolation compartment having a plurality of walls, the isolation compartment defined by the plurality of walls, at least one of the plurality of walls of the isolation compartment defining at least one opening wherein the member in the first position permits particles to enter the isolation compartment from the semiconductor process chamber through the opening, and wherein the member in the second position substantially encloses the isolation compartment thereby substantially retaining the particles in the isolation compartment and substantially limiting movement of the particles between the semiconductor process chamber and the isolation compartment through the opening. An ion implant system is also provided.

Abstract: Various systems configured to reduce distortion of a resist during a metrology process are provided. The systems include an electron beam metrology tool configured to measure one or more characteristics of one or more resist features formed on a specimen. The electron beam metrology tool may be configured as a scanning electron microscope. The resist may be designed for exposure at a wavelength of about 193 nm. One system includes a cooling subsystem configured to alter a temperature of the specimen during measurements by the tool such that the resist feature(s) are not substantially distorted during the measurements. Another system includes a drying subsystem that is configured to reduce moisture proximate the specimen during measurements by the electron beam metrology tool such that the resist feature(s) are not substantially distorted during the measurements. An additional system may include both the cooling subsystem and the drying subsystem.

Abstract: Substrate masking apparatus includes a platen assembly to support a substrate for processing, a mask having an aperture, a retaining mechanism to retain the mask in a masking position, and a positioning mechanism to change the relative positions of the mask and the substrate so that different areas of the substrate are exposed through the aperture in the mask. The apparatus may further include a mask loading mechanism to transfer the mask to and between the masking position and a non-masking position. The processing may include ion implantation of the substrate with different implant parameter values in different areas. In other embodiments, an area of the substrate to be processed is selectable by a mask, a shutter or a beam modifier in front of the substrate.