Abstract: A power diode having substantially no reverse-recovery time and relatively high conductance. The power diode is a majority carrier semiconductor having a structure that is similar to that of a metal oxide semiconductor field effect transistor (MOSFET), in that it includes a source, a drain, a gate, and a body. In one embodiment, to increase conductance of the power diode, a linked-cell configuration that reverses the geometry of a conventional cell-type MOSFET is employed, thereby increasing the width of a conductance channel over that of a conventional MOSFET, and compensating for a relatively low level of inversion in the channel region. Negative and positive feedback circuits are used to further improve the conductance of the power diode by dynamically setting a bias voltage applied between the gate and the source to a level just below a threshold voltage.