Abstract: A matchline sense circuit for detecting a rising voltage on a matchline of a CAM array is disclosed. The circuit initially precharges a matchline to ground before turning on a current source to supply current to the matchline and raise the voltage of the matchline. A reference matchline sense circuit generates a self-timed control signal to keep the current supply turned on for a predetermined duration of time. Sensed data on the matchlines are latched after the current source is turned off and the matchlines are precharged to ground. Because the matchline sense circuit of the present invention precharges the matchlines to ground instead of the supply voltage, VDD, less power is consumed. By sensing the rise of the matchline voltage to an n-channel transistor threshold potential, the matchline sensing operation speed is increased.

Abstract: A multiple matchline sense circuit for detecting a single, more than one, or no match conditions during a search-and-compare operation of a content addressable memory is disclosed. The circuit compares the rising voltage rate of a multiple matchline to the rising voltage rate of a reference multiple matchline in order to generate a multibit result representing one of the three conditions. The circuit generates a self-timed control signal to end the search-and-compare operation, and to set the circuit to a precharge state.

Abstract: A matchline sense circuit for detecting a rising voltage on a matchline of a CAM array is disclosed. The circuit initially precharges a matchline to ground before turning on a current source to supply current to the matchline and raise the voltage of the matchline. A reference matchline sense circuit generates a self-timed control signal to keep the current supply turned on for a predetermined duration of time. Sensed data on the matchlines are latched after the current source is turned off and the matchlines are precharged to ground. Because the matchline sense circuit of the present invention precharges the matchlines to ground instead of the supply voltage, VDD, less power is consumed. By sensing the rise of the matchline voltage to an n-channel transistor threshold potential, the matchline sensing operation speed is increased.

Abstract: A multiple matchline sense circuit for detecting a single, more than one, or no match conditions during a search-and-compare operation of a content addressable memory is disclosed. The circuit compares the rising voltage rate of a multiple matchline to the rising voltage rate of a reference multiple matchline in order to generate a multibit result representing one of the three conditions. The circuit generates a self-timed control signal to end the search-and-compare operation, and to set the circuit to a precharge state.

Abstract: A multiple matchline sense circuit for detecting a single, more than one, or no match conditions during a search-and-compare operation of a content addressable memory is disclosed. The circuit compares the rising voltage rate of a multiple matchline to the rising voltage rate of a reference multiple matchline in order to generate a multibit result representing one of the three conditions. The circuit generates a self-timed control signal to end the search-and-compare operation, and to set the circuit to a precharge state.

Abstract: A matchline sense circuit for detecting a rising voltage on a matchline of a CAM array is disclosed. the circuit initially precharges a matchline to ground before turning on a current source to supply current to the matchline and raise the voltage of the matchline. A reference matchline sense circuit generates a self-timed control signal to keep the current supply turned on for a predetermined duration of time. Sensed data on the matchlines are latched after the current source is turned off and the matchlines are precharged to ground. Because the matchline sense circuit of the present invention precharges the matchlines to ground instead of the supply voltage, VDD, less power is consumed. By sensing the rise of the matchline voltage to an n-channel transistor threshold potential, the matchline sensing operation speed is increased.

Abstract: A multiple matchline sense circuit for detecting a single, more than one, or no match conditions during a search-and-compare operation of a content addressable memory is disclosed. The circuit compares the rising voltage rate of a multiple matchline to the rising voltage rate of a reference multiple matchline in order to generate a multibit result representing one of the three conditions. The circuit generates a self-timed control signal to end the search-and-compare operation, and to set the circuit to a precharge state.

Abstract: A matchline sense circuit for detecting a rising voltage on a matchline of a CAM array is disclosed. the circuit initially precharges a matchline to ground before turning on a current source to supply current to the matchline and raise the voltage of the matchline. A reference matchline sense circuit generates a self-timed control signal to keep the current supply turned on for a predetermined duration of time. Sensed data on the matchlines are latched after the current source is turned off and the matchlines are precharged to ground. Because the matchline sense circuit of the present invention precharges the matchlines to ground instead of the supply voltage, VDD, less power is consumed. By sensing the rise of the matchline voltage to an n-channel transistor threshold potential, the matchline sensing operation speed is increased.

Abstract: An architecture and method for fast precharge of bitlines in a densely packed, dynamic content addressable memory is disclosed. The dynamic content addressable memory cells are arranged according to an open bitline architecture to obtain high packing density. The bitlines are precharged through equalization between every two adjacent open bitline pairs. More specifically, a bitline and its adjacent neighboring bitline on the same side of the bitline sense amplifiers are equalized at several locations along the bitlines such that they are equalized at high speed, which is typically not available in open bitline architectures. Hence the adjacent bitlines are precharged in a manner similar to a folded bitline architecture. Additional equalization circuits are connected between the complementary bitlines of each open bitline pair, therefore during the precharge phase, all four bitlines of the two open bitline pairs are equalized with each other.

Abstract: An architecture and method for fast precharge of bitlines in a densely packed, dynamic content addressable memory is disclosed. The dynamic content addressable memory cells are arranged according to an open bitline architecture to obtain high packing density. The bitlines are precharged through equalization between every two adjacent open bitline pairs. More specifically, a bitline and its adjacent neighbouring bitline on the same side of the bitline sense amplifiers are equalized at several locations along the bitlines such that they are equalized at high speed, which is typically not available in open bitline architectures. Hence the adjacent bitlines are precharged in a manner similar to a folded bitline architecture. Additional equalization circuits are connected between the complementary bitlines of each open bitline pair, therefore during the precharge phase, all four bitlines of the two open bitline pairs are equalized with each other.

Abstract: An architecture and method for fast precharge of bitlines in a densely packed, dynamic content addressable memory is disclosed. The dynamic content addressable memory cells are arranged according to an open bitline architecture to obtain high packing density. The bitlines are precharged through equalization between every two adjacent open bitline pairs. More specifically, a bitline and its adjacent neighbouring bitline on the same side of the bitline sense amplifiers are equalized at several locations along the bitlines such that they are equalized at high speed, which is typically not available in open bitline architectures. Hence the adjacent bitlines are precharged in a manner similar to a folded bitline architecture. Additional equalization circuits are connected between the complementary bitlines of each open bitline pair, therefore during the precharge phase, all four bitlines of the two open bitline pairs are equalized with each other.

Abstract: An architecture and method for fast precharge of bitlines in a densely packed, dynamic content addressable memory is disclosed. The dynamic content addressable memory cells are arranged according to an open bitline architecture to obtain high packing density. The bitlines are precharged through equalization between every two adjacent open bitline pairs. More specifically, a bitline and its adjacent neighbouring bitline on the same side of the bitline sense amplifiers are equalized at several locations along the bitlines such that they are equalized at high speed, which is typically not available in open bitlines architectures. Hence the adjacent bitlines are precharged in a manner similar to a folded bitline architecture. Additional equalization circuits are connected between the complementary bitlines of each open bitline pair, therefore during the precharge phase, all four bitlines of the two open bitline pairs are equalized with each other.