Abstract: Systems and methods are provided for scribing wafers with short laser pulses so as to reduce the ablation threshold of target material. In a stack of material layers, a minimum laser ablation threshold based on laser pulse width is determined for each of the layers. The highest of the minimum laser ablation thresholds is selected and a beam of one or more laser pulses is generated having a fluence in a range between the selected laser ablation threshold and approximately ten times the selected laser ablation threshold. In one embodiment, a laser pulse width in a range of approximately 0.1 picosecond to approximately 1000 picoseconds is used. In addition, or in other embodiments, a high pulse repetition frequency is selected to increase the scribing speed. In one embodiment, the pulse repetition frequency is in a range between approximately 100 kHz and approximately 100 MHz.

Abstract: Systems and methods are provided for scribing wafers with short laser pulses so as to reduce the ablation threshold of target material. In a stack of material layers, a minimum laser ablation threshold based on laser pulse width is determined for each of the layers. The highest of the minimum laser ablation thresholds is selected and a beam of one or more laser pulses is generated having a fluence in a range between the selected laser ablation threshold and approximately ten times the selected laser ablation threshold. In one embodiment, a laser pulse width in a range of approximately 0.1 picosecond to approximately 1000 picoseconds is used. In addition, or in other embodiments, a high pulse repetition frequency is selected to increase the scribing speed. In one embodiment, the pulse repetition frequency is in a range between approximately 100 kHz and approximately 100 MHz.

Abstract: A laser processing system quickly and flexibly modifies a processing beam to determine and implement an improved or optimum beam profile for a particular application (or a subset of the application). The system reduces the sensitivity of beam shaping subsystems to variations in the laser processing system, including those due to manufacturing tolerances, thermal drift, variations in component performance, and other sources of system variation. Certain embodiments also manipulate lower quality laser beams (higher M2 values) to provide acceptable shaped beam profiles.

Abstract: Systems and methods are provided for scribing wafers with short laser pulses so as to reduce the ablation threshold of target material. In a stack of material layers, a minimum laser ablation threshold based on laser pulse width is determined for each of the layers. The highest of the minimum laser ablation thresholds is selected and a beam of one or more laser pulses is generated having a fluence in a range between the selected laser ablation threshold and approximately ten times the selected laser ablation threshold. In one embodiment, a laser pulse width in a range of approximately 0.1 picosecond to approximately 1000 picoseconds is used. In addition, or in other embodiments, a high pulse repetition frequency is selected to increase the scribing speed. In one embodiment, the pulse repetition frequency is in a range between approximately 100 kHz and approximately 100 MHz.

Abstract: An improved method for singulation of compound electronic devices is presented. Compound electronic devices are manufactured by combining two or more substrates into an assembly containing multiple devices. Presented are methods for singulation of compound electronic devices using laser processing. The methods presented provide fewer defects such as cracking or chipping of the substrates while minimizing the width of the kerf and maintaining system throughput.

Abstract: A laser processing system quickly and flexibly modifies a processing beam to determine and implement an improved or optimum beam profile for a particular application (or a subset of the application). The system reduces the sensitivity of beam shaping subsystems to variations in the laser processing system, including those due to manufacturing tolerances, thermal drift, variations in component performance, and other sources of system variation. Certain embodiments also manipulate lower quality laser beams (higher M2 values) to provide acceptable shaped beam profiles.

Abstract: A laser processing system quickly and flexibly modifies a processing beam to determine and implement an improved or optimum beam profile for a particular application (or a subset of the application). The system reduces the sensitivity of beam shaping subsystems to variations in the laser processing system, including those due to manufacturing tolerances, thermal drift, variations in component performance, and other sources of system variation. Certain embodiments also manipulate lower quality laser beams (higher M2 values) to provide acceptable shaped beam profiles.

Abstract: An improved method for singulation of compound electronic devices is presented. Compound electronic devices are manufactured by combining two or more substrates into an assembly containing multiple devices. Presented are methods for singulation of compound electronic devices using laser processing. The methods presented provide fewer defects such as cracking or chipping of the substrates while minimizing the width of the kerf and maintaining system throughput.

Abstract: A process to laser micro-machine a metal part with a high cosmetic quality surface includes applying a protective coating layer to at least one surface of the part before micro-machining the part with a laser. The protective coating applied to the high quality cosmetic surface can have a thickness of between about 5 mil and about 10 mil, inclusive and have sufficient adhesion strength to adhere to the part without delaminating during processing. The protective coating applied to the machining surface of the part can be a metallic material, such as a metallic foil or tape.

Abstract: A laser processing system quickly and flexibly modifies a processing beam to determine and implement an improved or optimum beam profile for a particular application (or a subset of the application). The system reduces the sensitivity of beam shaping subsystems to variations in the laser processing system, including those due to manufacturing tolerances, thermal drift, variations in component performance, and other sources of system variation. Certain embodiments also manipulate lower quality laser beams (higher M2 values) to provide acceptable shaped beam profiles.

Abstract: Methods and apparatus for correcting defects, such as rounded corners and line end shortening, in patterns formed via lithography are provided. Such defects are compensated for “post-rasterization” by manipulating the grayscale values of pixel maps.

Abstract: Systems and methods are provided for scribing wafers with short laser pulses so as to reduce the ablation threshold of target material. In a stack of material layers, a minimum laser ablation threshold based on laser pulse width is determined for each of the layers. The highest of the minimum laser ablation thresholds is selected and a beam of one or more laser pulses is generated having a fluence in a range between the selected laser ablation threshold and approximately ten times the selected laser ablation threshold. In one embodiment, a laser pulse width in a range of approximately 0.1 picosecond to approximately 1000 picoseconds is used. In addition, or in other embodiments, a high pulse repetition frequency is selected to increase the scribing speed. In one embodiment, the pulse repetition frequency is in a range between approximately 100 kHz and approximately 100 MHz.

Abstract: Systems and methods are provided for scribing wafers to efficiently ablate passivation and/or encapsulation layers while reducing or eliminating chipping and cracking in the passivation and/or encapsulation layers. Short laser pulses are used to provide high peak powers and reduce the ablation threshold. In one embodiment, the scribing is performed by a q-switched CO2 laser.

Abstract: Systems and methods for gray scale lithography for defining edges such as on microelectronic device patterns during integrated circuit fabrication are disclosed. Methods for critical dimension edge placement and slope enhancement utilize central pixel dose addition or modulated inner pixels. A method for gray scale lithography for defining edges of features generally comprises identifying a center pixel of a feature, exposing the general width of the feature including the identified center pixel with full doses, and enhancing the identified center pixel by exposing the identified center pixel with additional dose to accurately place the edge of the feature, whereby the edge of the feature is defined and moved by exposing the center pixel with the additional dose.

Abstract: Methods and apparatus for correcting defects, such as rounded corners and line end shortening, in patterns formed via lithography are provided. Such defects are compensated for “post-rasterization” by manipulating the grayscale values of pixel maps.

Abstract: Methods and apparatus for correcting defects, such as rounded corners and line end shortening, in patterns formed via photolithography are provided. Such defects are compensated for “post-rasterization” by manipulating the grayscale values of pixel maps.

Abstract: Systems and methods for gray scale lithography for defining edges such as on microelectronic device patterns during integrated circuit fabrication are disclosed. Methods for critical dimension edge placement and slope enhancement utilize central pixel dose addition or modulated inner pixels. A method for gray scale lithography for defining edges of features generally comprises identifying a center pixel of a feature, exposing the general width of the feature including the identified center pixel with full doses, and enhancing the identified center pixel by exposing the identified center pixel with additional dose to accurately place the edge of the feature, whereby the edge of the feature is defined and moved by exposing the center pixel with the additional dose.