Abstract: The presently disclosed ion sources include one or more electromagnets for changing the distribution of plasma within a discharge space of an ion source. At least one of the electromagnets is oriented about an outer periphery of a tubular sidewall of the ion source and changes a distribution of the plasma in a peripheral region of the discharge space.

Abstract: Embodiments relate to a grid short clearing system is provided for gridded ion beam sources used in industrial applications for materials processing systems that reduces grid damage during operation. In various embodiments, the ion source is coupled to a process chamber and a grid short clearing system includes methods for supplying a gas to the process chamber and setting the gas pressure to a predetermined gas pressure in the range between 50 to 750 Torr, applying an electrical potential difference between each adjacent pair of grids using a current-limited power supply, and detecting whether or not the grid shorts are cleared. The electrical potential difference between the grids is at least 10% lower than the DC electrical breakdown voltage between the grids with no contaminants.

Abstract: The presently disclosed ion sources include one or more electromagnets for changing the distribution of plasma within a discharge space of an ion source. At least one of the electromagnets is oriented about an outer periphery of a tubular sidewall of the ion source and changes a distribution of the plasma in a peripheral region of the discharge space.

Abstract: Embodiments relate to a grid short clearing system is provided for gridded ion beam sources used in industrial applications for materials processing systems that reduces grid damage during operation. In various embodiments, the ion source is coupled to a process chamber and a grid short clearing system includes methods for supplying a gas to the process chamber and setting the gas pressure to a predetermined gas pressure in the range between 50 to 750 Torr, applying an electrical potential difference between each adjacent pair of grids using a current-limited power supply, and detecting whether or not the grid shorts are cleared. The electrical potential difference between the grids is at least 10% lower than the DC electrical breakdown voltage between the grids with no contaminants.

Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, an apparatus for substrate processing includes a process chamber having a chamber body defining an inner volume; and a silicon containing coating disposed on an interior surface of the chamber body, wherein an outer surface of the silicon containing coating is at least 35 percent silicon (Si) by atom. In some embodiments, a method for forming a silicon containing coating in a process chamber includes providing a first process gas comprising a silicon containing gas to an inner volume of the process chamber; and forming a silicon containing coating on an interior surface of the process chamber, wherein an outer surface of the silicon containing coating is at least 35 percent silicon.

Abstract: Methods for implanting ions into a substrate by a plasma immersion ion implanting process are provided. In one embodiment, a method for implanting ions into a substrate includes providing a substrate into a processing chamber, generating a plasma from a gas mixture including a reacting gas and a etching gas in the chamber, adjusting the ratio between the reacting gas and the etching gas in the supplied gas mixture and implanting ions from the plasma into the substrate. In another embodiment, the method includes providing a substrate into a processing chamber, supplying a gas mixture including reacting gas and a halogen containing reducing gas into the chamber, forming a plasma from the gas mixture, gradually increasing the ratio of the etching gas in the gas mixture, and implanting ions from the gas mixture into the substrate.

Abstract: Methods of nitridation and selective oxidation are provided herein. In some embodiments, a method of selectively forming an oxide layer on a semiconductor structure disposed on a substrate support in a process chamber is provided, wherein the semiconductor structure comprising a substrate, one or more metal-containing layers, and one or more non metal-containing layers. The method may include forming a first remote plasma from a first process gas comprising oxygen; and exposing the semiconductor structure to a reactive species formed from the first remote plasma to selectively form an oxide layer on the one or more non metal-containing layers, wherein a density of the reactive species is about 109 to about 1017 molecules/cm3 and wherein a pressure in the chamber during exposure of the first layer is about 5 mTorr to about 3 Torr.

Abstract: Methods of nitridation and selective oxidation are provided herein. In some embodiments, a method of nitridation includes providing a substrate having a first layer disposed thereon, where the substrate is disposed on a substrate support in a process chamber; forming a remote plasma from a process gas comprising nitrogen; and exposing the first layer to a reactive species formed from the remote plasma to form a nitrogen-containing layer, wherein a density of the reactive species is about 109 to about 1017 molecules/cm3 and wherein a pressure in the chamber during exposure of the first layer is about 5 mTorr to about 3 Torr. In some embodiments, the nitrogen-containing layer is a gate dielectric layer for use in a semiconductor device.

Abstract: In one aspect of the invention, a method for the improved operation of an electronic device manufacturing system is provided. The method includes providing information to an interface coupled to an electronic device manufacturing system having parameters, processing the information to predict a first parameter, and providing an instruction related to at least a second parameter of the electronic device manufacturing system wherein the instruction is based on the predicted first parameter. Numerous other aspects are provided.

Abstract: Methods for implanting ions into a substrate by a plasma immersion ion implanting process are provided. In one embodiment, a method for implanting ions into a substrate includes providing a substrate into a processing chamber, generating a plasma from a gas mixture including a reacting gas and a etching gas in the chamber, adjusting the ratio between the reacting gas and the etching gas in the supplied gas mixture and implanting ions from the plasma into the substrate. In another embodiment, the method includes providing a substrate into a processing chamber, supplying a gas mixture including reacting gas and a halogen containing reducing gas into the chamber, forming a plasma from the gas mixture, gradually increasing the ratio of the etching gas in the gas mixture, and implanting ions from the gas mixture into the substrate.

Abstract: Methods for implanting ions into a substrate by a plasma immersion ion implanting process are provided. In one embodiment, a method for implanting ions into a substrate includes providing a substrate into a processing chamber, generating a plasma from a gas mixture including a reacting gas and a etching gas in the chamber, adjusting the ratio between the reacting gas and the etching gas in the supplied gas mixture and implanting ions from the plasma into the substrate. In another embodiment, the method includes providing a substrate into a processing chamber, supplying a gas mixture including reacting gas and a halogen containing reducing gas into the chamber, forming a plasma from the gas mixture, gradually increasing the ratio of the etching gas in the gas mixture, and implanting ions from the gas mixture into the substrate.

Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, an apparatus for substrate processing includes a process chamber having a chamber body defining an inner volume; and a silicon containing coating disposed on an interior surface of the chamber body, wherein an outer surface of the silicon containing coating is at least 35 percent silicon (Si) by atom. In some embodiments, a method for forming a silicon containing coating in a process chamber includes providing a first process gas comprising a silicon containing gas to an inner volume of the process chamber; and forming a silicon containing coating on an interior surface of the process chamber, wherein an outer surface of the silicon containing coating is at least 35 percent silicon.

Abstract: Embodiments herein provide waste abatement apparatuses and methods for treating waste solutions derived from depleted or used plating solutions, such as from an electroless deposition process or an electrochemical plating process. The waste abatement systems and processes may be used to treat the waste solutions by lowering the concentration of, if not completely removing, metal ions or reducing agents that are dissolved within the waste solution. In one embodiment of a demetallization process, a waste solution may be exposed to a heating element (e.g., copper coil) contained within an immersion tank. In another embodiment, the waste solution may be exposed to a catalyst having high surface area (e.g., steel wool or other metallic wool) within an immersion tank. In another embodiment, the waste solution may be flowed through a removable, catalytic conduit (e.g., copper tubing) having an internal catalytic surface.

Abstract: In one aspect, improved methods and apparatus for pressure control in an electronic device manufacturing system are provided. The method includes acquiring information related to a current state of the electronic device manufacturing system, determining a desired value of a first parameter of the electronic device manufacturing system based on the acquired information and adjusting at least one parameter of a pump to obtain the desired value of the first parameter of the electronic device manufacturing system.

Abstract: Methods for implanting ions into a substrate by a plasma immersion ion implanting process are provided. In one embodiment, a method for implanting ions into a substrate includes providing a substrate into a processing chamber, generating a plasma from a gas mixture including a reacting gas and a etching gas in the chamber, adjusting the ratio between the reacting gas and the etching gas in the supplied gas mixture and implanting ions from the plasma into the substrate. In another embodiment, the method includes providing a substrate into a processing chamber, supplying a gas mixture including reacting gas and a halogen containing reducing gas into the chamber, forming a plasma from the gas mixture, gradually increasing the ratio of the etching gas in the gas mixture, and implanting ions from the gas mixture into the substrate.

Abstract: Embodiments herein provide waste abatement apparatuses and methods for treating waste solutions derived from depleted or used plating solutions, such as from an electroless deposition process or an electrochemical plating process. The waste abatement systems and processes may be used to treat the waste solutions by lowering the concentration of, if not completely removing, metal ions or reducing agents that are dissolved within the waste solution. In one embodiment of a demetallization process, a waste solution may be exposed to a heating element (e.g., copper coil) contained within an immersion tank. In another embodiment, the waste solution may be exposed to a catalyst having high surface area (e.g., steel wool or other metallic wool) within an immersion tank. In another embodiment, the waste solution may be flowed through a removable, catalytic conduit (e.g., copper tubing) having an internal catalytic surface.

Abstract: Embodiments herein provide waste abatement apparatuses and methods for treating waste solutions derived from depleted or used plating solutions, such as from an electroless deposition process or an electrochemical plating process. The waste abatement systems and processes may be used to treat the waste solutions by lowering the concentration of, if not completely removing, metal ions or reducing agents that are dissolved within the waste solution. In one embodiment of a demetallization process, a waste solution may be exposed to a heating element (e.g., copper coil) contained within an immersion tank. In another embodiment, the waste solution may be exposed to a catalyst having high surface area (e.g., steel wool or other metallic wool) within an immersion tank. In another embodiment, the waste solution may be flowed through a removable, catalytic conduit (e.g., copper tubing) having an internal catalytic surface.

Abstract: In one aspect, an apparatus is provided that includes (1) an interface adapted to analyze information about an electronic device manufacturing system that produces an effluent having an undesirable material, and provide information about the effluent, and (2) an abatement system adapted to receive information about the effluent, receive the effluent, and attenuate the undesirable material. Numerous other aspects are provided.

Abstract: In one aspect, improved methods and apparatus for pressure control in an electronic device manufacturing system are provided. The method includes acquiring information related to a current state of the electronic device manufacturing system, determining a desired value of a first parameter of the electronic device manufacturing system based on the acquired information and adjusting at least one parameter of a pump to obtain the desired value of the first parameter of the electronic device manufacturing system.

Abstract: In one aspect of the invention, a method for the improved operation of an electronic device manufacturing system is provided. The method includes providing information to an interface coupled to an electronic device manufacturing system having parameters, processing the information to predict a first parameter, and providing an instruction related to at least a second parameter of the electronic device manufacturing system wherein the instruction is based on the predicted first parameter. Numerous other aspects are provided.