Abstract: A wavelength shifting fiber and method of making the same is disclosed. A wavelength shifting fiber can include a plastic core; and a coating surrounding the plastic core. The wavelength shifting fiber has an optical attenuation length of at least 500 cm. A method of making a wavelength shifting fiber can include storing a plastic core precursor and cladding melt preform in an environment containing an inert gas; and drawing the plastic core precursor and cladding melt preform to form a wavelength shifting fiber, wherein drawing is performed under tension of less than 77 g/mm2 and more than 40 g/mm2, and where the wavelength shifting fiber comprises an attenuation length of at least 500 cm.

Abstract: A scintillation crystal can include a cesium halide that is co-doped with thallium and another element. In an embodiment, the scintillation crystal can include CsI:Tl, Me, where Me represents co-doped Sb and Bi. In a particular embodiment, the scintillation crystal may have a cesium iodide host material, a first dopant including a thallium, a second dopant including an antimony, and a third dopant including a bismuth.

Abstract: A scintillation crystal can include a cesium halide that is co-doped with thallium and another element. In an embodiment, the scintillation crystal can include CsX:Tl, Me, where X represents a halogen, and Me represents a Group 5A element. In a particular embodiment, the scintillation crystal may have a cesium iodide host material, a first dopant including a thallium cation, and a second dopant including an antimony cation.

Abstract: A luminescent material can include a rare earth halide having a chemical formula of RE(1-A-B-C)HTADETBSETCXz, wherein RE is a rare earth element, HT is an element or an interstitial site that provides a hole trap, DET is a dopant that provides a relatively deep electron trap, SET is a dopant that provides a relatively shallow electron trap, X is one or more halides, each of A, B, and C has a value greater at least 0.00001 and at most 0.09, and Z has a value in a range of 2 to 4. In an embodiment, a ratio of B:C is selected so that luminescent material has good linearity performance. In another embodiment, the ratio of B:C can be in a range of 10:1 to 100:1.

Abstract: A scintillation crystal can include a sodium halide that is co-doped with thallium and another element. In an embodiment, the scintillation crystal can include NaX:Tl, Me, wherein X represents a halogen, and Me represents a Group 1 element, a Group 2 element, a rare earth element, or any combination thereof. In a particular embodiment, the scintillation crystal has a property including, for radiation in a range of 300 nm to 700 nm, an emission maximum at a wavelength no greater than 430 nm; or an energy resolution less than 6.4% when measured at 662 keV, 22° C., and an integration time of 1 microsecond. In another embodiment, the co-dopant can be Sr or Ca. The scintillation crystal can have lower energy resolution, better proportionality, a shorter pulse decay time, or any combination thereof as compared to the sodium halide that is doped with only thallium.

Abstract: A scintillation crystal can include a cesium halide that is co-doped with thallium and another element. In an embodiment, the scintillation crystal can include CsX:Tl, Me, where X represents a halogen, and Me represents a Group 5A element. In a particular embodiment, the scintillation crystal may have a cesium iodide host material, a first dopant including a thallium cation, and a second dopant including an antimony cation.

Abstract: A scintillation crystal can include a cesium halide that is co-doped with thallium and another element. In an embodiment, the scintillation crystal can include CsX:Tl, Me, where X represents a halogen, and Me represents a Group 5A element. In a particular embodiment, the scintillation crystal may have a cesium iodide host material, a first dopant including a thallium cation, and a second dopant including an antimony cation.

Abstract: A luminescent material can include a rare earth halide having a chemical formula of RE(1-A-B-C)HTADETBSETCXz, wherein RE is a rare earth element, HT is an element or an interstitial site that provides a hole trap, DET is a dopant that provides a relatively deep electron trap, SET is a dopant that provides a relatively shallow electron trap, X is one or more halides, each of A, B, and C has a value greater at least 0.00001 and at most 0.09, and Z has a value in a range of 2 to 4. In an embodiment, a ratio of B:C is selected so that luminescent material has good linearity performance. In another embodiment, the ratio of B:C can be in a range of 10:1 to 100:1.

Abstract: A substrate can include an optical light guide including a core. The core can include a fluorescent material in a content of greater than 0.5 wt. % for the total weight of the core. In an embodiment, the optical light guide can include a scintillator material. In another embodiment the core can include polyethylene naphthalate (PEN) and a polyvinylidene difluoride cladding.

Abstract: A scintillation crystal can include a cesium halide that is co-doped with thallium and another element. In an embodiment, the scintillation crystal can include CsX:Tl, Me, where X represents a halogen, and Me represents a dopant selected from the group consisting of chromium (Cr), zirconium (Zr), cobalt (Co), manganese (Mn), cadmium (Cd), dysprosium (Dy), thulium (Tm), tantalum (Ta), and erbium (Er), the dopant concentration of the element selected from the group consisting of chromium (Cr), zirconium (Zr), cobalt (Co), manganese (Mn), cadmium (Cd), dysprosium (Dy), thulium (Tm), tantalum (Ta), and erbium (Er) in the scintillation crystal is in a range of 1×10?7 mol % to 0.5 mol %. In a particular embodiment, the scintillation crystal may have a cesium iodide host material, a first dopant including a thallium cation, and a second dopant including a cation.

Abstract: A luminescent material can include a rare earth halide having a chemical formula of RE(1-A-B-C)HTADETBSETCXz, wherein RE is a rare earth element, HT is an element or an interstitial site that provides a hole trap, DET is a dopant that provides a relatively deep electron trap, SET is a dopant that provides a relatively shallow electron trap, X is one or more halides, each of A, B, and C has a value greater at least 0.00001 and at most 0.09, and Z has a value in a range of 2 to 4. In an embodiment, a ratio of B:C is selected so that luminescent material has good linearity performance. In another embodiment, the ratio of B:C can be in a range of 10:1 to 100:1.

Abstract: A luminescent material can include a rare earth halide having a chemical formula of RE(1-A-B-C)HTADETBSETCXz, wherein RE is a rare earth element, HT is an element or an interstitial site that provides a hole trap, DET is a dopant that provides a relatively deep electron trap, SET is a dopant that provides a relatively shallow electron trap, X is one or more halides, each of A, B, and C has a value greater at least 0.00001 and at most 0.09, and Z has a value in a range of 2 to 4. In an embodiment, a ratio of B:C is selected so that luminescent material has good linearity performance. In another embodiment, the ratio of B:C can be in a range of 10:1 to 100:1.

Abstract: A luminescent material can include an element or an interstitial site that provides a hole trap in the luminescent material; a first dopant that provides a first electron trap in the luminescent material; and a second dopant that provides a second electron trap in the luminescent material, wherein the second dopant is a relatively shallower electron trap as compared to the first dopant. In an embodiment, a ratio of the first dopant to the second dopant is in a range of 10:1 to 100:1 on an atomic basis. In another embodiment, a ratio of the first dopant to the second dopant is selected so that luminescent material has a lower average value for a departure from perfect linearity in a range of 5 keV to 20 keV that is less to other luminescent materials of the same base compound. The luminescent material may not be a rare earth halide.

Abstract: A substrate can include at least two scintillator materials that are mixed at a predetermined ratio. In an embodiment, the scintillator materials can have a decay time difference of at least 50% when exposed to a same radiation source. In another embodiment, the scintillator materials can have a maximum emission wavelength difference of at least 25 nm when exposed to a same radiation source. At least one of the scintillator materials has a decay time of at most 10 ?s. A system can include the substrate and a logic element configured to determine an identity represented by the substrate. A method can include generating an electronic pulse in response to the substrate being exposed to a radiation source; and analyzing the electronic pulse to determine an identity represented by the substrate.

Abstract: A scintillation crystal can include a cesium halide that is co-doped with thallium and another element. In an embodiment, the scintillation crystal can include CsX:Tl, Me, where X represents a halogen, and Me represents a Group 5A element. In a particular embodiment, the scintillation crystal may have a cesium iodide host material, a first dopant including a thallium cation, and a second dopant including an antimony cation.

Abstract: A scintillation crystal can include a cesium halide that is co-doped with thallium and another element. In an embodiment, the scintillation crystal can include CsX:Tl, Me, where X represents a halogen, and Me represents a dopant selected from the group consisting of chromium (Cr), zirconium (Zr), cobalt (Co), manganese (Mn), cadmium (Cd), dysprosium (Dy), thulium (Tm), tantalum (Ta), and erbium (Er), the dopant concentration of the element selected from the group consisting of chromium (Cr), zirconium (Zr), cobalt (Co), manganese (Mn), cadmium (Cd), dysprosium (Dy), thulium (Tm), tantalum (Ta), and erbium (Er) in the scintillation crystal is in a range of 1×10?7 mol % to 0.5 mol %. In a particular embodiment, the scintillation crystal may have a cesium iodide host material, a first dopant including a thallium cation, and a second dopant including a cation.

Abstract: A scintillation crystal can include Ln(1-y)REyX3, wherein Ln represents a rare earth element, RE represents a different rare earth element, y has a value in a range of 0 to 1, and X represents a halogen. In an embodiment, RE is Ce, and the scintillation crystal is doped with Sr, Ba, or a mixture thereof at a concentration of at least approximately 0.0002 wt. %. In another embodiment, the scintillation crystal can have unexpectedly improved linearity and unexpectedly improved energy resolution properties. In a further embodiment, a radiation detection system can include the scintillation crystal, a photosensor, and an electronics device. Such a radiation detection system can be useful in a variety of radiation imaging applications.

Abstract: A scintillation crystal can include a cesium halide that is co-doped with thallium and another element. In an embodiment, the scintillation crystal can include CsX:Tl, Me, where X represents a halogen, and Me represents a Group 5A element. In a particular embodiment, the scintillation crystal may have a cesium iodide host material, a first dopant including a thallium cation, and a second dopant including an antimony cation.

Abstract: A scintillation crystal can include a sodium halide that is co-doped with thallium and another element. In an embodiment, the scintillation crystal can include NaX:Tl, Me, wherein X represents a halogen, and Me represents a Group 1 element, a Group 2 element, a rare earth element, or any combination thereof. In a particular embodiment, the scintillation crystal has a property including, for radiation in a range of 300 nm to 700 nm, an emission maximum at a wavelength no greater than 430 nm; or an energy resolution less than 6.4% when measured at 662 keV, 22° C., and an integration time of 1 microsecond. In another embodiment, the co-dopant can be Sr or Ca. The scintillation crystal can have lower energy resolution, better proportionality, a shorter pulse decay time, or any combination thereof as compared to the sodium halide that is doped with only thallium.

Abstract: A radiation detector can include a scintillator having opposing end surfaces and a plurality of discrete photosensors disposed on an end surface of the scintillator. In an embodiment, the photosensors are disposed at the corners or along the peripheral edge of the end surface, as opposed to being disposed at the center of the end surface. In an embodiment, the plurality of discrete photosensors may cover at most 80% of a surface area of the end surface of the scintillator and may not cover a center of the end surface of the scintillator. In a further embodiment, an aspect ratio of the monolithic scintillator can be selected to improve energy resolution.