Abstract: A multi-part transparent conductive zinc oxide layer for a photoelectric conversion device, and a method of producing same. The transparent conductive zinc oxide layer includes at least one basic layer sequence with a varying boron dopant concentration. The basic layer sequence includes a thinner transparent conductive zinc oxide higher-boron-doped layer and a thicker transparent conductive zinc oxide lower-boron-doped layer. The doping density through each individual conductive zinc oxide layer is substantially constant, which is achieved by intentionally doping the thicker transparent conductive zinc oxide lower-boron-doped layer. Optionally, an interlayer may be present between the at least one basic layer sequence and the substrate or an n-doped silicon layer upon which it is disposed. This advantageously permits efficient Edge Isolation by Laser EIL ablation of the transparent conductive zinc oxide layers while maintaining good electrical and optical properties in said layers.