Abstract: A set of nanocrystals comprising a semiconductor comprising A representing a metal or metalloid in the +III oxidation state and B representing an element in the ?III oxidation state, the nanocrystals being doped, on average per nanocrystal, by an atom of C chosen from the transition metals in the +I or +II oxidation state and various uses thereof.

Abstract: A set of nanocrystals comprising a semiconductor comprising A representing a metal or metalloid in the +III oxidation state and B representing an element in the ?III oxidation state, the nanocrystals being doped, on average per nanocrystal, by an atom of C chosen from the transition metals in the +I or +II oxidation state and various uses thereof.

Abstract: The invention relates to a method for preparing a material made of silicon and/or germanium nanowires, comprising the steps of: i) placing a source of silicon and/or a source of germanium in contact with a catalyst comprising a binary metal sulfide or a multinary metal sulfide, said metal(s) being selected from among Sn, In, Bi, Sb, Ga, Ti, Cu, and Zn, by means of which silicon and/or germanium nanowires are obtained, ii) optionally recovering the silicon and/or germanium nanowires obtained in step (i); the catalyst and, optionally, the source of silicon and/or the source of germanium being heated before, during and/or after being placed in contact under temperature and pressure conditions that allow the growth of the silicon and/or germanium nanowires.

Abstract: A method for producing a material based on silicon nanowires is provided. The method includes the steps of: i) bringing into contact, in an inert atmosphere, a sacrificial support based on a halogenide, a carbonate, a sulfate or a nitrate of an alkali metal, an alkaline earth metal or a transition metal having metal nanoparticles, with the pyrolysis vapours of a silicon source having a silane compound, by which silicon nanowires are deposited on the sacrificial support; and optionally ii) eliminating the sacrificial support and recovering the silicon nanowires produced in step ii).

Abstract: The invention relates to a method for preparing a material made of silicon and/or germanium nanowires, comprising the steps of: i) placing a source of silicon and/or a source of germanium in contact with a catalyst comprising a binary metal sulfide or a multinary metal sulfide, said metal(s) being selected from among Sn, In, Bi, Sb, Ga, Ti, Cu, and Zn, by means of which silicon and/or germanium nanowires are obtained, ii) optionally recovering the silicon and/or germanium nanowires obtained in step (i); the catalyst and, optionally, the source of silicon and/or the source of germanium being heated before, during and/or after being placed in contact under temperature and pressure conditions that allow the growth of the silicon and/or germanium nanowires.

Abstract: A method for producing a material based on silicon nanowires is provided. The method includes the steps of: i) bringing into contact, in an inert atmosphere, a sacrificial support based on a halogenide, a carbonate, a sulfate or a nitrate of an alkali metal, an alkaline earth metal or a transition metal having metal nanoparticles, with the pyrolysis vapours of a silicon source having a silane compound, by which silicon nanowires are deposited on the sacrificial support; and optionally ii) eliminating the sacrificial support and recovering the silicon nanowires produced in step ii).

Abstract: The present invention relates to a method for depositing nanoparticles (NPs) on a nanostructured metal oxide (NSMO) substrate, characterized in that it comprises the steps of: a) functionalizing the NSMO substrate with a bifunctional coupling agent carrying a first function, this first function being a phosphonic function that forms a bond with the NSMO, and a second function that is intended to form a bond with a nanoparticle; and b) grafting the nanoparticles via a bond with the second function of the coupling agent. The invention also relates to a stack comprising a nanostructured metal oxide substrate covered with nanoparticles by way of a bifunctional coupling agent carrying a first function, this first function being a phosphonic function and forming a bond with the NSMO, and a second function that is intended to form a bond with a nanoparticle. The invention is applicable to the field of microelectronics and especially to the production of electrodes and the production of photovoltaic panels.

Abstract: The present invention relates to a method for depositing nanoparticles (NPs) on a nanostructured metal oxide (NSMO) substrate, characterised in that it comprises the steps of: a) functionalising the NSMO substrate with a bifunctional coupling agent carrying a first function, this first function being a phosphonic function that forms a bond with the NSMO, and a second function that is intended to form a bond with a nanoparticle; and b) grafting the nanoparticles via a bond with the second function of the coupling agent. The invention also relates to a stack comprising a nanostructured metal oxide substrate covered with nanoparticles by way of a bifunctional coupling agent carrying a first function, this first function being a phosphonic function and forming a bond with the NSMO, and a second function that is intended to form a bond with a nanoparticle. The invention is applicable to the field of microelectronics and especially to the production of electrodes and the production of photovoltaic panels.

Abstract: The present invention relates to a process for preparing nanoparticles of antimonides of metal element(s) in the form of a colloidal solution, using antimony trihydride (SbH3) as a source of antimony.

Abstract: The invention relates to a process for the non-covalent coating of a support by a hybrid organic/inorganic film, characterized in that it comprises the steps of: —depositing a conjugated organic polymer comprising organic groups of X type onto the support; depositing nanoparticles comprising one or more organic groups of Y type onto the support, and in that the groups of X and Y types are capable of developing hydrogen-type bonds between themselves. Typically, the deposition steps are repeated, generally alternately, until the desired thickness for the film is obtained. The deposition may be carried out on the whole of the support or on one part of the latter only.

Abstract: The present invention comprises a method for preparing a nanocrystal having (i) a core comprising a semiconductor comprising A representing a metal or metalloid in the +III oxidation state and B representing an element in the ?III oxidation state, coated with (ii) a shell in which the outer portion comprises a semiconductor having the formula ZnS1-xEx, where E represents an element in the ?II oxidation state and x is a decimal number such that 0?x<1, said method comprising a step consisting of heating a mixture of at least one precursor of A, at least one precursor of B, at least one precursor of zinc, at least one precursor of sulphur and, optionally, at least one precursor of E, from a temperature T1 to a temperature T2 greater than T1 in an increasing manner and so as to form, firstly, said core then said shell. The present invention also concerns a nanocrystal obtainable by the invention method and uses thereof.

Abstract: A method for preparing nanocrystals is disclosed. According to one aspect, the noncrystals include a semiconductor ternary compound consisting of the elements A, B and C. According to another aspect, the nanocrystals include a semiconductor of formula ABC2 optionally coated with a shell, the external portion of which includes a semiconductor of formula ZnS1-xFx, with A representing a metal or metalloid in the oxidation state +I, B representing a metal or metalloid in the oxidation state +III, C representing an element in the oxidation state ?II, F representing an element in the oxidation state ?II and x being a decimal number such that 0?x<1. The disclosure also relates to the prepared nanocrystals and their uses.

Abstract: The present invention comprises a method for preparing a nanocrystal having (i) a core comprising a semiconductor comprising A representing a metal or metalloid in the +III oxidation state and B representing an element in the ?III oxidation state, coated with (ii) a shell in which the outer portion comprises a semiconductor having the formula ZnS1-xEx, where E represents an element in the ?II oxidation state and x is a decimal number such that 0?x<1, said method comprising a step consisting of heating a mixture of at least one precursor of A, at least one precursor of B, at least one precursor of zinc, at least one precursor of sulphur and, optionally, at least one precursor of E, from a temperature T1 to a temperature T2 greater than T1 in an increasing manner and so as to form, firstly, said core then said shell. The present invention also concerns a nanocrystal obtainable by the invention method and uses thereof.

Abstract: Luminescent material consisting of nanocrystals comprising a core surrounded by a shell, said core consisting of a nanocrystal of semiconductor of formula AB in which A represents a metal or a metalloid in oxidation state (II) and B represents a chemical element in oxidation state (VI), and said shell consisting of a ZnSe layer whose surface is provided with an organic passivation layer consisting of at least one primary amine combined with at least one phosphine oxide and/or phosphine selenide compound. The invention relates in particular to nanocrystals with a CdSe core, these being covered by a ZnSe shell. The invention furthermore relates to a method of preparing these materials.

Abstract: Nanocrystal comprising an inorganic core consisting of least one metal and/or at least one semi-conductor compound comprising at least one metal, the external surface of said nanocrystal being provided with an organic coating layer, consisting of at least one ligand compound of formula (I): X—Y-Z??(I) in which X represents a 1,1-dithiolate or 1,1-diselenoate group that is linked by the two atoms of sulphur or selenium to an atom of metal of the external surface of said nanocrystal; Y represents a spacer group, such as a group capable of allowing a transfer of charge or an insulating group; Z is a group chosen from among groups capable of communicating specific properties to the nanocrystal. Their methods of manufacture.

Abstract: Nanocrystal comprising an inorganic core consisting of least one metal and/or at least one semi-conductor compound comprising at least one metal, the external surface of said nanocrystal being provided with an organic coating layer, consisting of at least one ligand compound of formula (I): X—Y-Z??(I) in which X represents a 1,1-dithiolate or 1,1-diselenoate group that is linked by the two atoms of sulphur or selenium to an atom of metal of the external surface of said nanocrystal; Y represents a spacer group, such as a group capable of allowing a transfer of charge or an insulating group; Z is a group chosen from among groups capable of communicating specific properties to the nanocrystal. Their methods of manufacture.

Abstract: Luminescent material consisting of nanocrystals comprising a core surrounded by a shell, said core consisting of a nanocrystal of semiconductor of formula AB in which A represents a metal or a metalloid in oxidation state (II) and B represents a chemical element in oxidation state (VI), and said shell consisting of a ZnSe layer whose surface is provided with an organic passivation layer consisting of at least one primary amine combined with at least one phosphine oxide and/or phosphine selenide compound.

Abstract: A method and system for network management. According to one embodiment, a centralized data store is used for central configuration of the monitoring and management of computers and their applications, an intelligent agent (running on each of the hosts of the managed network) has the capability to differentiate between the individuality of systems being managed by using rules based on attributes and variations in the attributes of the host system, and a graphical user interface is provided for centralized management of the hosts on the managed network. The invention may be used to carry out administrative tasks on the hosts of the managed network.