Abstract: A heat shielding apparatus capable of dynamically responding to incident heat flux of changing ratio of thermal radiation and convective heat, wherein the dynamic response comprises thermal conduction of the incident heat to a region of lower ambient temperature, and substantive reflection of the incident thermal radiation.

Abstract: Polishing media in the form of bristles made from a porous, non-porous, or minimally porous polymer-based material, apparatus and systems including the media, and methods of forming and using the media, apparatus, and systems are disclosed. An exemplary method of manufacturing bristles for use in polishing a workpiece which includes a non-planar surface includes the steps of combining a liquid polymer comprising a TDI polyester pre-polymer having an NCO content in the range of 5% with a curative to form a polymeric material, separating the foamed polymeric material into a plurality of bristles, and stitching the bristles onto a platen.

Abstract: Polishing media in the form of bristles made from a porous polymer-based material, apparatus and systems including the media, and methods of forming and using the media, apparatus, and systems are disclosed. A method of manufacturing bristles for use in polishing a workpiece which includes a non-planar surface includes the steps of combining a liquid polymer material and a foaming agent to form a foamed polymeric material, and separating the foamed polymeric material into a plurality of bristles. The foaming agent is configured to impart a porosity to the polymeric material, where the porosity is characterized by a density in the range of 0.3 to 1.2 g/cm3.

Abstract: A method of improving a removal rate of a pad includes producing a body of a pad of polyurethane from a mix; and introducing into the mix an additive which decreases an elastic rebound of the pad so as to increase a chemical-mechanical planarization removal rate; and using as the additive a substance which at least contains starch. In another embodiment, in a CMP process that includes removing a barrier and buffing a polyurethane after a bulk copper removal process, a polishing pad is used having a shore D hardness less than 35% and having at least one layer made from a mix composed of at least one of a prepolymer with an isocyanate concentration of between 6.5% and 11.0% to achieve a molal concentration, and a monomer in combination with an addition of isocyanate to achieve the substantially same molal concentration.

Abstract: The present invention is directed to a fast break-in polishing pad, which chemically and/or physically allows for a high rate of absorption of water and/or chemical slurry by decreasing the maximum absorption distance into the pad. In a preferred embodiment, this decrease in distance is achieved by forming a plurality of holes in the pad. In a preferred embodiment, the distance between the hole edges is no greater than twice the pad thickness. In other exemplary embodiments, the maximum distance can be decreased by applying a chemical foaming agent to the open-air mix while in the liquid phase. In another exemplary embodiment, the maximum distance can be decreased by including the addition of a cell-opening surfactant applied to the open-air mix while in the liquid phase. In another exemplary embodiment, the maximum distance can be decreased by directly injecting microbubbles into the open-air mix while in the liquid phase.

Abstract: A polishing pad for a chemical mechanical polishing has a body rotatable in a predetermined direction and having a working surface, the working surface being provided with grooves, the grooves being formed so that over the course of a single revolution of the pad said grooves extend in all directions in the plane of the working surface. Such an arrangement of grooves is the optimum configuration for CMP, especially copper CMP.

Abstract: A polishing pad has a sublayer; a top layer attached to the sublayer, the sublayer having a modulus of elasticity between 300 and 5000 psi and a compressibility of less than 30% at 73 psi, wherein the top pad has a modulus of elasticity which is greater than the modulus of elasticity of the sublayer and a compressibility which is smaller than a compressibility of the sublayer.

Abstract: In a chemical mechanical polishing for removing a barrier and subsequent buffing a polyurethane polishing pad is used which is composed of for removal a barrier and buffing after a bulk copper removal to the barrier in a chemical mechanical polishing of a copper film deposited on a surface of a semiconductor wafer, at least one layer of the polishing pad is made from a mix composed of the prepolymer with an isocyanate concentration of between substantially 6.5% and 11.0% or from a monomer and an addition of isocyanate required to achieve a same molal concentration, with a shore D hardness less than substantially 35%.

Abstract: A polishing pad has a sublayer; a top layer attached to the sublayer, the sublayer having a modulus of elasticity between 300 and 5000 psi and a compressibility of less than 30% at 73 psi, wherein the top pad has a modulus of elasticity which is greater than the modulus of elasticity of the sublayer and a compressibility which is smaller than a compressibility of the sublayer.

Abstract: A method of improving a removal rate of a pad includes producing a body of a pad of polyurethane from a mix; and introducing into the mix an additive which decreases an elastic rebound of the pad so as to increase a chemical-mechanical planarization removal rate; and using as the additive a substance which at least contains starch.

Abstract: A polishing pad for a chemical mechanical polishing has a body rotatable in a predetermined direction and having a working surface, the working surface being provided with grooves, the grooves being formed so that over the course of a single revolution of the pad said grooves extend in all directions in the plane of the working surface. Such an arrangement of grooves is the optimum configuration for CMP, especially copper CMP.

Abstract: For improving planarization of urethane polishing pads, at least one layer of the pad has a base resin and an isocyanate with a concentration within a range of 6.5-11.0 weight percent to obtain a high planarization property.

Abstract: A method and apparatus for pre-conditioning a polishing pad for use in chemical mechanical planarization of semiconductor wafers is described. The apparatus includes a pre-conditioning member having a smooth surface. The method includes providing a pre-conditioning member having a smooth surface, pressing the pre-conditioning member against the polishing pad while moving the polishing pad, and flattening the surface of the polishing pad until a polishing pad flatness is achieved that may be used to achieve a desired semiconductor wafer planarity.

Abstract: An invention is provided for a carrier head that includes a metal plate having an opening formed in a central location. The metal plate has a wafer side, which faces the backside of a wafer during a CMP operation, and a non-wafer side. Positioned above the non-wafer side of the metal plate, and located above the opening in the metal plate, is a bladder or membrane. To facilitate uniformity during polishing, an inflating pressure is applied to the bladder, or membrane, that is substantially equivalent to a polishing pressure utilized during the CMP operation. To facilitate transporting the wafer, a vacuum can be applied to the opening in the metal plate to adhere the wafer to the carrier head. Further, to release the wafer from the carrier head, the bladder, or membrane, can be inflated such that it protrudes through the opening in the metal plate.

Abstract: A method and apparatus for pre-conditioning a polishing pad for use in chemical mechanical planarization of semiconductor wafers is described. The apparatus includes a pre-conditioning member having a smooth surface. The method includes providing a pre-conditioning member having a smooth surface, pressing the pre-conditioning member against the polishing pad while moving the polishing pad, and flattening the surface of the polishing pad until a polishing pad flatness is achieved that may be used to achieve a desired semiconductor wafer planarity.

Abstract: A method and apparatus for conditioning a fixed-abrasive polishing pad used in chemical mechanical planarization of semiconductor wafers is described. The apparatus includes a conditioning member having a smooth surface. The method includes providing a conditioning member having a smooth surface, pressing the conditioning member against the fixed-abrasive polishing pad, and moving the fixed-abrasive polishing pad. In one embodiment, the method further comprises moving the conditioning member perpendicular to the direction of movement of the fixed-abrasive pad to compensate for variations in amounts of exposed abrasive on the fixed-abrasive pad.

Abstract: An invention is provided for a carrier head that includes a metal plate having an opening formed in a central location. The metal plate has a wafer side, which faces the backside of a wafer during a CMP operation, and a non-wafer side. Positioned above the non-wafer side of the metal plate, and located above the opening in the metal plate, is a bladder or membrane. To facilitate uniformity during polishing, an inflating pressure is applied to the bladder, or membrane, that is substantially equivalent to a polishing pressure utilized during the CMP operation. To facilitate transporting the wafer, a vacuum can be applied to the opening in the metal plate to adhere the wafer to the carrier head. Further, to release the wafer from the carrier head, the bladder, or membrane, can be inflated such that it protrudes through the opening in the metal plate.

Abstract: A method and apparatus for pre-conditioning a polishing pad for use in chemical mechanical planarization of semiconductor wafers is described. The apparatus includes a pre-conditioning member having a smooth surface. The method includes providing a pre-conditioning member having a smooth surface, pressing the pre-conditioning member against the polishing pad while moving the polishing pad, and flattening the surface of the polishing pad until a polishing pad flatness is achieved that may be used to achieve a desired semiconductor wafer planarity.

Abstract: A method for optimizing the planarizing length of a polishing pad is disclosed that includes forming a substantially constant network of islands and trenches into a first side of a polishing pad. The trenches are formed to a pre-determined distance apart. The polishing pad is fit to a chemical-mechanical polishing system. A surface layer of a semiconductor wafer is planarized with the first side of the polishing pad. Upon completion of the polishing process, the planarized wafer surface layer is observed. If the wafer surface layer is planarized to an amount outside of a set target polishing range, the distance between the trenches on the first side of the polishing pad is uniformly decreased. The above steps are repeated until the wafer surface layer is planarized to an amount within the set target polishing range.

Abstract: A method and apparatus for pre-conditioning a polishing pad for use in chemical mechanical planarization of semiconductor wafers is described. The apparatus includes a pre-conditioning member having a smooth surface. The method includes providing a pre-conditioning member having a smooth surface, pressing the pre-conditioning member against the polishing pad while moving the polishing pad, and flattening the surface of the polishing pad until a polishing pad flatness is achieved that may be used to achieve a desired semiconductor wafer planarity.