Abstract: A TFA (thin film on ASIC) image sensor with stability-optimized photodiode for converting electromagnetic radiation into an intensity-dependent photocurrent. The TFA includes an intermetal dielectric layer, pixel back electrodes, vias, metal contacts, a transparent conductive oxide (TCO) layer, and an intrinsic absorption layer with a thickness between 300 nm and 600 nm. The pixel back electrodes are disposed over the intermetal dielectric layer, which is disposed over the ASIC. The vias connect to the pixel back electrodes and the metal contacts, which are formed in the intermetal dielectric layer. The TCO is disposed above the intrinsic absorption layer, which is disposed above the pixel back electrodes.

Abstract: The invention relates to a TFA image sensor with stability-optimized photodiode for converting electromagnetic radiation into an intensity-dependent photocurrent with an intermetal dielectric, on which, in the region of the pixel matrix, a lower barrier layer is situated and a conductive layer is situated on the barrier layer, and vias being provided for the contact connection to the ASIC, the vias in metal contacts on the ASIC. A TFA image sensor having improved electrical properties is provided. This is achieved in that an intrinsic absorption layer is provided between the TCO layer and the barrier layer with a layer thickness of between 300 nm and 600 nm. Before the application of the photodiodes, the topmost, comparatively thick metal layer of the ASIC is removed and replaced by a matrix of thin metal electrodes which form the back electrodes of the photodiodes, the matrix being patterned in the pixel raster.

Abstract: The invention relates to an optoelectronic component for converting electromagnetic radiation into an intensity-dependent photoelectric current. The component includes one substrate which is formed especially according to CMOS technology. The substrate has an integrated semiconductor structure and an optically active thin layer structure which is situated upstream in the direction of light incidence. The structure includes a layer of a transparent conductive material and at least one layer of semiconductor material, which are arranged on an isolating layer, inside which connection means are provided for establishing a connection between the optically active thin layer structure and the integrated semiconductor structure arranged on the substrate. The aim of the invention is to develop one such optoelectronic component in such a way that the electrical connection between the layer of transparent conductive material and an electrical potential connection can be established in a technically simple manner.

Abstract: The invention relates to a method for producing a TFA image sensor in which a multi-layer arrangement comprising a photo diode matrix is arranged on an ASIC switching circuit provided with electronic circuits for operating the TFA image sensor, such as pixel electronics, peripheral electronics and system electronics, for the pixel-wise conversion of electromagnetic radiation into an intensity-dependent photocurrent, the pixels being connected to contacts of the underlying pixel electronics of the ASIC switching circuit. The method enables conventionally produced ASIC switching circuits to be used without impairing the topography of the photoactive sensor surface. The CMOS passivation layer in the photoactive region and then the upper CMOS metallization are removed and replaced by a metallic layer which is structured in the pixel raster, for the formation of back electrodes.

Abstract: The invention relates to a method for producing a photodiode contact for a TFA image sensor which includes a photodiode, produced by deposition of a multilayer system and a transparent conductive contact layer on an ASIC circuit that has been coated with an intermediate metal dielectric component and that has vias in a photoactive zone which are arranged on a pixel grid. Said vias extend through the intermediate metal dielectric component and are linked with respective strip conductors of the CMOS-ASIC circuit. A pixel-grid structured barrier layer, and on top thereof a CMOS metallization, are arranged on the intermediate metal dielectric component. The aim of the invention is to improve the characteristic variables of the photodiode by simple technological means.

Abstract: The invention relates to an optoelectronic component for converting electromagnetic radiation into an intensity-dependent photoelectric current. The component consists of includes one substrate which is formed especially according to CMOS technology. The substrate has an integrated semiconductor structure and an optically active thin layer structure which is situated upstream in the direction of light incidence. The structure consists of includes a layer of a transparent conductive material and at least one layer of semiconductor material, which are arranged on an isolating layer, inside which connection means are provided for establishing a connection between the optically active thin layer structure and the integrated semiconductor structure arranged on the substrate.

Abstract: Optoelectronic component for converting electromagnetic radiation into an intensity-dependent photocurrent comprising a substrate formed in CMOS technology, in particular, with an integrated semiconductor structure (ASIC) and an optically active thin-film structure arranged upstream in the direction of light incidence and comprising in each case at least one layer made of doped and at least one layer made of undoped semiconductor material, which is connected to a microelectronic circuit arranged on the substrate by means of an insulating layer, within which are situated connecting means for contact-connecting the optically active thin-film structure to the semiconductor structure. The invention is based on the object of providing an optoelectronic component, and a method for fabricating it, which, on the one hand, can be fabricated more simply and, on the other hand, has a reduced dark current.

Abstract: The invention relates to an opto-electronic component for converting electromagnetic radiation into an intensity-dependent photocurrent, comprising a substrate (1) with a microelectronic circuit whose surface is provided with a first layer (7) which is electrically contacted thereto and made of amorphous silicon a-i:H or alloys thereof, and at least one other optically active layer (8) is disposed upstream from said first layer in the direction of incident light thereof (7). The invention also relates to the production thereof. The aim of the invention is to improve upon an opto-electronic component of the above-mentioned variety in order to obtain high spectral sensitivity within the visible light range and, correspondingly, significantly reduce sensitivity to radiation in the infrared range without incurring any additional construction costs.

Abstract: The invention relates to a method for producing a TFA image sensor in which a multi-layer arrangement comprising a photo diode matrix is arranged on an ASIC switching circuit provided with electronic circuits for operating the TFA image sensor, such as pixel electronics, peripheral electronics and system electronics, for the pixel-wise conversion of electromagnetic radiation into an intensity-dependent photocurrent, the pixels being connected to contacts of the underlying pixel electronics of the ASIC switching circuit. The method enables conventionally produced ASIC switching circuits to be used without impairing the topography of the photoactive sensor surface. The CMOS passivation layer in the photoactive region and then the upper CMOS metallization are removed and replaced by a metallic layer which is structured in the pixel raster, for the formation of back electrodes.

Abstract: The invention relates to a TFA image sensor with stability-optimized photodiode for converting electromagnetic radiation into an intensity-dependent photocurrent with an intermetal dielectric, on which, in the region of the pixel matrix, a lower barrier layer is situated and a conductive layer is situated on the barrier layer, and vias being provided for the contact connection to the ASIC, the vias in metal contacts on the ASIC. A TFA image sensor having improved electrical properties is provided. This is achieved in that an intrinsic absorption layer is provided between the TCO layer and the barrier layer with a layer thickness of between 300 nm and 600 nm. Before the application of the photodiodes, the topmost, comparatively thick metal layer of the ASIC is removed and replaced by a matrix of thin metal electrodes which form the back electrodes of the photodiodes, the matrix being patterned in the pixel raster.

Abstract: A color filter array for an optical image sensor comprising pixels that are arranged in a matrix or a line, each pixel being connected to an electronic circuit for converting the information concerning the luminosity of each pixel into electric signals. A rectangular color filter of a predetermined color is placed over each pixel and several pixels that are directly adjacent form pixel by pixel with color filters of different colors a base cell, a plurality of said base cells together constituting the matricial or linear image sensor. The aim of the invention is to create a color filter array for an optical image sensor, which reliably prevents the distortion of the color signals by unfiltered white light. The object is achieved by making the border regions between adjacent color filters of different color significantly less permeable to light as a result of an overlap or additional non-transparent strips.

Abstract: The invention relates to a method for producing a photodiode contact for a TFA image sensor which includes a photodiode, produced by deposition of a multilayer system and a transparent conductive contact layer on an ASIC circuit that has been coated with an intermediate metal dielectric component and that has vias in a photoactive zone which are arranged on a pixel grid. Said vias extend through the intermediate metal dielectric component and are linked with respective strip conductors of the CMOS-ASIC circuit. A pixel-grid structured barrier layer, and on top thereof a CMOS metallization, are arranged on the intermediate metal dielectric component. The aim of the invention is to improve the characteristic variables of the photodiode by simple technological means.

Abstract: Optoelectronic component for converting electromagnetic radiation into an intensity-dependent photocurrent comprising a substrate formed in CMOS technology, in particular, with an integrated semiconductor structure (ASIC) and an optically active thin-film structure arranged upstream in the direction of light incidence and comprising in each case at least one layer made of doped and at least one layer made of undoped semiconductor material, which is connected to a microelectronic circuit arranged on the substrate by means of an insulating layer, within which are situated connecting means for contact-connecting the optically active thin-film structure to the semiconductor structure. The invention is based on the object of providing an optoelectronic component, and a method for fabricating it, which, on the one hand, can be fabricated more simply and, on the other hand, has a reduced dark current.

Abstract: The invention relates to an opto-electronic component for converting electromagnetic radiation into an intensity-dependent photocurrent, comprising a substrate (1) with a microelectronic circuit whose surface is provided with a first layer (7) which is electrically contacted thereto and made of amorphous silicon a-i:H or alloys thereof, and at least one other optically active layer (8) is disposed upstream from said first layer in the direction of incident light thereof (7). The invention also relates to the production thereof. The aim of the invention is to improve upon an opto-electronic component of tho above-mentioned variety in order to obtain high spectral sensitivity within the visible light range and, correspondingly, significantly reduce sensitivity to radiation in the infrared range without incurring any additional construction costs.

Abstract: Optoelectronic component for converting electromagnetic radiation into an intensity-dependent photocurrent comprising a substrate (1) formed in CMOS technology, in particular, with an integrated semiconductor structure (ASIC) and an optically active thin-film structure (7, 8, 9) arranged upstream in the direction of light incidence and comprising in each case at least one layer made of doped (8) and at least one layer made of undoped (7) semiconductor material, which is connected to a microelectronic circuit arranged on the substrate (1) by means of an insulating layer (4), within which are situated connecting means (2, 3) for contact-connecting the optically active thin-film structure (7, 8, 9) to the semiconductor structure. The invention is based on the object of providing an optoelectronic component, and a method for fabricating it, which, on the one hand, can be fabricated more simply and, on the other hand, has a reduced dark current.

Abstract: The invention relates to an optical sensor consisting of an arrangement of pixel units, each comprising an optoelectronic converter for converting the incident radiation into a photoelectric current that depends on intensity and wavelength, an integrator median for deriving a measured value corresponding to the photoelectric current detected, and a controllable storage device for storing the measured value, and a readout control device for readout of the stored measured values based on one pixel unit, where the image striking the sensor can be assembled from the measured values based on pixel units.