Abstract: A process for forming trenches in a target material includes forming a masking layer onto the target material, where the masking layer comprises a material having high selectivity to a plasma etch gas adapted for etching the target material. A pattern is formed in the masking layer to expose portions of the target material and the sample is placed on an angle mount at a pre-determined angle relative to a cathode of a reactive ion etcher so that the target material is within a plasma dark space of the plasma etch gas. Ballistic ions within the plasma dark space form a trench structure within the target material. The process may further include repeating the steps of positioning the sample and etching the exposed portions of the target material with the substrate at a different angle to define a triangular structure.

Abstract: A process for forming trenches in a target material includes forming a masking layer onto the target material, where the masking layer comprises a material having high selectivity to a plasma etch gas adapted for etching the target material. A pattern is formed in the masking layer to expose portions of the target material and the sample is placed on an angle mount at a pre-determined angle relative to a cathode of a reactive ion etcher so that the target material is within a plasma dark space of the plasma etch gas. Ballistic ions within the plasma dark space form a trench structure within the target material. The process may further include repeating the steps of positioning the sample and etching the exposed portions of the target material with the substrate at a dif ferent angle to define a triangular structure.

Abstract: A particle beam system 1 for cleaning itself comprises an irradiation system to direct electromagnetic radiation onto the surfaces to be cleaned and a supply system 61 to supply a precursor gas to the interior of the vacuum chamber 11 of the particle beam system 1. The precursor gas is activated in a vicinity of the surfaces to be cleaned and is converted into a reaction gas which reacts with the contaminants present on the irradiated surfaces such that said contaminants may be pumped out then.

Abstract: A particle beam system 1 for cleaning itself comprises an irradiation system to direct electromagnetic radiation onto the surfaces to be cleaned and a supply system 61 to supply a precursor gas to the interior of the vacuum chamber 11 of the particle beam system 1. The precursor gas is activated in a vicinity of the surfaces to be cleaned and is converted into a reaction gas which reacts with the contaminants present on the irradiated surfaces such that said contaminants may be pumped out then.